Abstract:
PROBLEM TO BE SOLVED: To provide an electron emitting element which hardly generates insulation breakdown and is produced easily at low cost and emits stably a suitable amount of electrons.SOLUTION: The electron emitting element 1 includes insulator fine particles 5 between an electrode base board 2 and a thin-film electrode 3, and has an electron acceleration layer 4 excluding conductive fine particles. The electron emitting element 1 emits an electron from the thin-film electrode 3 by accelerating the electron in the electron acceleration layer 4 when applying voltage between the electrode base board 2 and the thin-film electrode 3.
Abstract:
PROBLEM TO BE SOLVED: To provide an electron source which is a thin film type electron source having a lower electrode and an upper electrode and an electron acceleration layer comprising an insulator or a semiconductor between them starting a diode current at lower threshold voltage than in the prior art and capable of securing a diode current required for electron emission even at low voltage, and to realize an image display device having a long service life and low power. SOLUTION: It is realized by using noble metal of a platinum group (8 group) or an Ib group containing alkali metal oxide, alkaline earth metal compound and a transition-metal compound of 3 to 7 group from an interface with the electron acceleration layer to the surface or their laminated film, mixed film or alloy film as the upper electrode. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an electron source device which has a high electron emission capacity, is inexpensive and has a long-life even in a low degree of vacuum, and a display device which has a high light emitting efficiency, is inexpensive and has a high reliability. SOLUTION: The electron source device is provided with a porous layer (e.g., a porous alumina layer) composed of an insulator and having a number of micropores arrayed in a vertical direction, and a first and a second conductor layers arranged on the both face sides of the porous layer, wherein a current density I/S when a DC voltage is applied between the second conductor layer to be a positive electrode and the first conductor layer is ≥1 μA/cm 2 , whereas S means an area of a section with the first and the second conductor layers and the porous layer are overlapped therein. COPYRIGHT: (C)2004,JPO