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    Surface emission type electron source and a drawing device
    1.
    发明专利
    Surface emission type electron source and a drawing device 有权

    公开(公告)号：JP4122043B1

    公开(公告)日：2008-07-23

    申请号：JP2007207887

    申请日：2007-08-09

    Applicant: 株式会社クレステック

    Inventor： 英之 大井 ,  明 小島

    IPC: H01L21/027 ,  H01J1/312 ,  H01J37/305

    CPC classification number: H01J37/073 ,  B82Y10/00 ,  B82Y40/00 ,  H01J1/312 ,  H01J37/06 ,  H01J37/3174 ,  H01J2201/312 ,  H01J2237/0635

    Abstract: 【課題】描画領域が大きい場合でも、電子線を用いたパターン描画を等倍で一括に行うことができる面放出型電子源および描画装置を提供する。
    【解決手段】本発明の面放出型電子源は、平面状の第１の電極と、第１の電極に対向して設けられた平面状の第２の電極と、第１の電極と第２の電極の間に設けられた電子通過層と、第２の電極および第１の電極に電圧を印加する電源部とを有する。 電子通過層は、第１の電極から第２の電極に向かう第１の方向に伸びる量子細線が所定の間隔をあけて複数設けられているものであり、第２の電極の表面から電子が放出される。
    【選択図】図１

    Electronic device and a method of manufacturing the same
    2.
    发明专利
    Electronic device and a method of manufacturing the same 有权

    公开(公告)号：JP5374432B2

    公开(公告)日：2013-12-25

    申请号：JP2010083862

    申请日：2010-03-31

    Applicant: パナソニック株式会社

    Inventor： 勉 櫟原 ,  健治 椿 ,  雅男 久保 ,  信義 越田

    IPC: H01J1/312 ,  H01J9/02

    CPC classification number: H01J9/025 ,  B82Y10/00 ,  H01J1/312 ,  H01J2201/312

    Abstract: The electronic device includes a substrate, a first electrode formed over a surface of the substrate, a second electrode located on an opposite side of the first electrode from the substrate so as to face the first electrode, and a functional layer interposed between the first electrode and second electrode and formed by means of anodizing a first polycrystalline semiconductor layer in an electrolysis solution so as to contain a plurality of semiconductor nanocrystals. The electronic device further includes a second polycrystalline semiconductor layer interposed between the first electrode and the functional layer so as to be in close contact with the functional layer. The second polycrystalline semiconductor layer has an anodic oxidization rate in the electrolysis solution lower than that of the first polycrystalline semiconductor layer so as to function as a stop layer for exclusively anodizing the first polycrystalline semiconductor layer.

    Electron emitter
    5.
    发明专利
    Electron emitter 有权
    电子发射器

    公开(公告)号：JP2007250517A

    公开(公告)日：2007-09-27

    申请号：JP2006201494

    申请日：2006-07-25

    Applicant: Ngk Insulators Ltd ,  日本碍子株式会社

    Inventor： SATO KEI ,  HATTORI TETSUYA ,  YAMAGUCHI HIROFUMI ,  OZAWA SHUICHI

    IPC: H01J1/312

    CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J1/30 ,  H01J2201/306 ,  H01J2201/312

    Abstract: PROBLEM TO BE SOLVED: To provide a piezoelectric-film-type electron emitter of high durability improved in degradation of electron emission quantity caused by repeated use. SOLUTION: This electron emitter 120 includes a substrate 121, a lower electrode 122, an emitter layer 123, and an upper electrode 124. The upper electrode 124 has a plurality of openings 124a formed therein, and an emitter section 125 located on the top surface of the emitter layer 123 is exposed through the openings 124a to a reduced-pressure atmosphere. The electron emitter 120 is configured so that, when a pulse-like drive voltage Va is applied between the lower electrode 122 and the upper electrode 124, electrons are accumulated on the emitter section 125, and thereafter the electrons are emitted toward the reduced-pressure atmosphere. The emitter layer 123 contains a primary component (i.e., a ferroelectric composition) and an additional component. The additional component contains a transition metal oxide of a high oxidation number which serves as an oxidizing agent and is thereby converted into an oxide of a lower oxidation number. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种高耐久性的压电薄膜型电子发射器，其改善了由重复使用引起的电子发射量的劣化。 解决方案：该电子发射器120包括衬底121，下电极122，发射极层123和上电极124.上电极124具有形成在其中的多个开口124a和位于 发射极层123的顶表面通过开口124a暴露于减压气氛。 电子发射体120被配置为使得当在下电极122和上电极124之间施加脉冲状驱动电压Va时，电子被累积在发射极部分125上，此后电子朝向减压 大气层。 发射极层123含有主要成分（即，铁电体组合物）和附加成分。 附加成分含有高氧化数的过渡金属氧化物，其作为氧化剂，由此转化为较低氧化数的氧化物。 版权所有（C）2007，JPO＆INPIT

    Surface emission type electron source, and drawing device
    7.
    发明专利
    Surface emission type electron source, and drawing device 有权
    表面发射型电子源和绘图装置

    公开(公告)号：JP2008294389A

    公开(公告)日：2008-12-04

    申请号：JP2007207887

    申请日：2007-08-09

    Applicant: Kuresutetsuku:Kk ,  株式会社クレステック

    Inventor： KOJIMA AKIRA ,  OI HIDEYUKI

    IPC: H01L21/027 ,  H01J1/312 ,  H01J37/305

    CPC classification number: H01J37/073 ,  B82Y10/00 ,  B82Y40/00 ,  H01J1/312 ,  H01J37/06 ,  H01J37/3174 ,  H01J2201/312 ,  H01J2237/0635

    Abstract: PROBLEM TO BE SOLVED: To provide a surface emission type electron source and a drawing device that can perform pattern drawing using the electron beam in equimultiples collectively even when a drawing region is large. SOLUTION: A surface emission type electron source includes a planar first electrode, a planar second electrode provided in opposition to the first electrode, an electron passage layer provided between the first electrode and the second electrode, and a power supply section for applying voltage to the second electrode and the first electrode. In the electron passage layer, multiple quantum fine lines extending in a first direction heading for the second electrode from the first electrode are provided with a predetermined interval therebetween. Electrons are emitted from the surface of the second electrode. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供一种即使当绘图区域大时也可以共同地使用等分的电子束进行图形绘制的表面发射型电子源和绘图装置。 解决方案：表面发射型电子源包括平面第一电极，与第一电极相对设置的平面第二电极，设置在第一电极和第二电极之间的电子通过层，以及用于施加 电压到第二电极和第一电极。 在电子通过层中，从第一电极朝向第二电极的第一方向延伸的多个量子细线以它们之间的预定间隔设置。 电子从第二电极的表面发射。 版权所有（C）2009，JPO＆INPIT

    Electronic device and method of manufacturing the same
    8.
    发明专利
    Electronic device and method of manufacturing the same 有权
    电子设备及其制造方法

    公开(公告)号：JP2011216354A

    公开(公告)日：2011-10-27

    申请号：JP2010083862

    申请日：2010-03-31

    Applicant: Panasonic Electric Works Co Ltd ,  パナソニック電工株式会社

    Inventor： ICHIHARA TSUTOMU ,  TSUBAKI KENJI ,  KUBO MASAO ,  KOSHIDA NOBUYOSHI

    IPC: H01J1/312 ,  H01J9/02

    CPC classification number: H01J9/025 ,  B82Y10/00 ,  H01J1/312 ,  H01J2201/312

    Abstract: PROBLEM TO BE SOLVED: To provide an electronic device, improved in device characteristics in comparison with those of conventional types, and to provide a method of manufacturing the device.SOLUTION: An electron source 10 as an electronic device includes a substrate 11; a lower electrode 2 as a first electrode formed on a surface side of the substrate 11; a surface electrode 7 as a second electrode which is located on the opposite side of the substrate 11 side of the lower electrode 2 and which faces the lower electrode 2; and a function layer 5a, provided between the lower electrode 2 and the surface electrode 7 and including a plurality of pieces of fine crystalline semiconductor 33, formed by anodizing a first polycrystalline semiconductor layer by using an electrolytic solution. Between the lower electrode 2 and the function layer 5a, a second polycrystalline semiconductor layer 3b, which has a lower speed of anodization with the electrolytic solution as compared with the first polycrystalline semiconductor layer and which is to serve as a stop layer that selectively anodizes the first polycrystalline semiconductor layer, is provided directly under the function layer 5a.

    Abstract translation: 要解决的问题：提供一种电子装置，与常规类型相比具有改进的器件特性，并提供一种制造器件的方法。解决方案：作为电子器件的电子源10包括衬底11; 作为形成在基板11的表面侧的第一电极的下部电极2; 作为第二电极的表面电极7位于下电极2的基板11侧的相对侧并面向下电极2; 以及功能层5a，其设置在下电极2和表面电极7之间，并且包括通过使用电解液阳极氧化第一多晶半导体层而形成的多个微晶半导体33。 在下部电极2和功能层5a之间，第二多晶半导体层3b与第一多晶半导体层相比具有比电解液更低的阳极氧化速度，并且作为停止层，其选择性地阳极氧化 第一多晶半导体层，直接设置在功能层5a的下方。

    Electron emission element, display employing electron emission element, and method for fabricating electron emission element
    9.
    发明专利
    Electron emission element, display employing electron emission element, and method for fabricating electron emission element 有权
    电子发射元件，使用电子发射元件的显示器和用于制造电子发射元件的方法

    公开(公告)号：JP2011151044A

    公开(公告)日：2011-08-04

    申请号：JP2011106086

    申请日：2011-05-11

    Applicant: Pioneer Electronic Corp ,  パイオニア株式会社

    Inventor： TANAKA RYOTA ,  NEGISHI NOBUYASU ,  SAKAMURA KAZUYUKI ,  OKUDA YOSHIYUKI ,  NAKATA TOMONARI ,  WATANABE ATSUSHI ,  YOSHIKAWA TAKAMASA ,  OGASAWARA KIYOHIDE

    IPC: H01J1/312 ,  H01J9/02 ,  H01J31/12

    CPC classification number: H01J9/022 ,  B82Y10/00 ,  H01J1/312 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/312 ,  H01J2201/3125 ,  H01J2329/0481 ,  H01J2329/0484

    Abstract: PROBLEM TO BE SOLVED: To enhance electron emission efficiency of an electron emission element and prevent the element from damage. SOLUTION: The electron emission element has an amorphous electron supply layer (4), an insulator layer (5) formed on the electron supply layer (4), and an upper electrode (6) formed on the insulator layer (5), and emits electrons when an electric field is applied between the electron supply layer (4) and the upper electrode (6). Moreover, the electron emission element has a recess (7), which is formed by cutting the upper electrode (6) and the insulator layer (5) to expose the electron supply layer (4), and a carbon layer (8) with a dome-shaped part (8a), covering the upper electrode (6) and the recess (7) to be in contact with an edge part (4c) of the exposed surface (4a) of the electron supply layer (4), rising at an inside part (4b) of the exposed surface (4a) of the electron supply layer (4), and having a cavity (8b) in a space with the electron supply layer (4). COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提高电子发射元件的电子发射效率并防止元件损坏。 解决方案：电子发射元件具有非晶电子供给层（4），形成在电子供给层（4）上的绝缘体层（5）和形成在绝缘体层（5）上的上电极（6） 并且当在电子供应层（4）和上电极（6）之间施加电场时发射电子。 此外，电子发射元件具有通过切割上电极（6）和绝缘体层（5）以暴露电子供给层（4）形成的凹部（7）和具有 覆盖上电极（6）和凹部（7）的与电子供给层（4）的暴露表面（4a）的边缘部分（4c）接触的圆顶形部分（8a），上升到 电子供应层（4）的暴露表面（4a）的内部部分（4b），并且在电子供应层（4）的空间中具有空腔（8b）。 版权所有（C）2011，JPO＆INPIT

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