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1007 条记录 (耗时 0.039 秒)

    Method for detecting deviation amount of effective power of microwave in plasma processing device, and its plasma processing device
    71.
    发明专利
    Method for detecting deviation amount of effective power of microwave in plasma processing device, and its plasma processing device 审中-公开
    用于检测等离子体处理装置中微波有效功率偏差量的方法及其等离子体处理装置

    公开(公告)号：JP2012216629A

    公开(公告)日：2012-11-08

    申请号：JP2011080030

    申请日：2011-03-31

    申请人： Tokyo Electron Ltd ,  東京エレクトロン株式会社

    发明人： SANO MASAKI ,  OSAKI YOSHINORI ,  KATSUKI JIRO ,  MAEKAWA KOJI

    IPC分类号： H01L21/31 ,  H05H1/46

    CPC分类号： H01J37/32192 ,  H01J37/32266

    摘要： PROBLEM TO BE SOLVED: To find a deviation amount of effective power of microwaves between plasma processing devices.SOLUTION: In this method, a deviation amount of effective power of microwaves generated between plural plasma processing devices 100, 200 is found. Processing gas is supplied in an exhausted processing container 12 to seal the container. Microwaves are introduced to the sealed processing container 12 at a predetermined voltage to generate plasma of processing gas. Variation width between a pressure in the processing container 12 before generating plasma and a pressure in the processing container after generating plasma is measured. The deviation amount of the effective power of the microwaves between the plasma processing device 100 and the other plasma processing device 200 is found on the basis of a pre-found correlation between the variation width of the pressure of the other plasma processing device to be a reference and microwave supply power.

    摘要翻译： 要解决的问题：找到等离子体处理装置之间的微波的有效功率的偏差量。 解决方案：在该方法中，发现在多个等离子体处理装置100,200之间产生的微波的有效功率的偏差量。 在排气处理容器12内供给加工气体以密封容器。 将微波以预定电压引入密封处理容器12，以产生处理气体的等离子体。 测量在产生等离子体之前处理容器12中的压力与产生等离子体后的处理容器内的压力之间的变化宽度。 基于等离子体处理装置100和另一等离子体处理装置200之间的微波的有效功率的偏差量，基于另一等离子体处理装置的压力变化幅度之间的预先确定的相关性 参考和微波供电。 版权所有（C）2013，JPO＆INPIT

    Plasma ashing process for increasing photoresist removal rate
    74.
    发明专利
    Plasma ashing process for increasing photoresist removal rate 审中-公开
    用于增加光刻胶去除速率的等离子体抛光工艺

    公开(公告)号：JP2012191242A

    公开(公告)日：2012-10-04

    申请号：JP2012148592

    申请日：2012-07-02

    申请人： Axcelis Technologies Inc ,  アクセリス テクノロジーズ インコーポレーテッド

    发明人： DAVID FERRIS ,  PHILIP HAMMAR ,  ALAN BECKNELL

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32522 ,  H01J2237/3342 ,  H01L21/0206 ,  H01L21/76814

    摘要： PROBLEM TO BE SOLVED: To provide a plasma ashing process for reducing the temperature at an impingement portion i.e., center portion, of a baffle plate, while maintaining or enhancing the photoresist removal rate.SOLUTION: The plasma ashing process for removing photoresist material and post etch residues from a substrate including a low k dielectric material comprising carbon, hydrogen, or a combination of carbon and hydrogen comprises: forming a plasma from an essentially oxygen free and nitrogen free gas mixture; flowing the plasma through a baffle plate assembly onto the substrate and removing photoresist material, post etch residues, and volatile byproducts from the substrate; and flowing a cooling gas over the baffle plate during a period of operation in which the plasma is not formed.

    摘要翻译： 要解决的问题：提供等离子体灰化处理，以在保持或增强光致抗蚀剂去除速率的同时降低挡板的冲击部分即中心部分的温度。 解决方案：用于去除光致抗蚀剂材料的等离子体灰化过程和从包括碳，氢或碳和氢的组合的低k电介质材料的衬底后蚀刻残留物包括：从基本上不含氧和氮形成等离子体 自由气体混合物; 将等离子体通过挡板组件流动到衬底上并从衬底去除光致抗蚀剂材料，后蚀刻残余物和挥发性副产物; 并且在不形成等离子体的操作期间使冷却气体流过挡板。 版权所有（C）2013，JPO＆INPIT