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    Method for transferring thin layers of monocrystalline material onto desirable substrate
    7.
    发明专利
    Method for transferring thin layers of monocrystalline material onto desirable substrate 审中-公开
    将单晶材料薄层转移到可靠基板上的方法

    公开(公告)号：JP2010219566A

    公开(公告)日：2010-09-30

    申请号：JP2010153076

    申请日：2010-07-05

    申请人： Max Planck G Zur Foerderung Wissenschaft Ev ,  マックス−プランク−ゲゼルシャフト ツール フェルデルンク デル ヴィッセンシャフテン エー.ファウ.

    发明人： GOESELE ULRICH ,  TONG QUIN-YI

    IPC分类号： H01L21/02 ,  H01L21/76 ,  H01L21/20 ,  H01L21/265 ,  H01L21/762 ,  H01L27/12

    CPC分类号： H01L21/76251 ,  H01L21/76254 ,  Y10S117/915

    摘要： PROBLEM TO BE SOLVED: To achieve a method for transferring monocrystalline thin layers from a first monocrystalline substrate onto a second substrate with a reduced requirement with respect to the hydrogen dose needed for layer splitting. SOLUTION: The method for transferring monocrystalline thin layers from the first monocrystalline substrate onto the second substrate carries out co-implantation of hydrogen-trap inducing ions with hydrogen ions, the high temperature implantation of hydrogen, and their combination. Then, heat-treatment is applied to weaken the connection between the implanted layer and the rest of the first substrate. Moreover, a strong bond is formed between the implanted first substrate and the second substrate. Finally, another heat-treatment is applied to split the monocrystalline thin layer from the rest of the first substrate by forming and growing hydrogen filled microcracks. COPYRIGHT: (C)2010,JPO&INPIT

    摘要翻译： 要解决的问题：为了实现将单晶薄层从第一单晶衬底转移到第二衬底上的方法，相对于层分裂所需的氢剂量需求降低。 解决方案：将单晶薄膜从第一单晶衬底转移到第二衬底上的方法执行吸氢诱导离子与氢离子的共同注入，氢的高温注入及其组合。 然后，进行热处理以削弱注入层与第一衬底的其余部分之间的连接。 此外，在植入的第一基板和第二基板之间形成强结合。 最后，进行另一种热处理以通过形成和生长填充氢的微裂纹将单晶薄层与第一衬底的其余部分分离。 版权所有（C）2010，JPO＆INPIT