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公开(公告)号:JP3674589B2
公开(公告)日:2005-07-20
申请号:JP2002015149
申请日:2002-01-24
Applicant: ウシオ電機株式会社
IPC: B01J19/12 , H01J65/00 , H01L21/302 , H01L21/3065
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公开(公告)号:JP4052155B2
公开(公告)日:2008-02-27
申请号:JP2003071873
申请日:2003-03-17
Applicant: ウシオ電機株式会社
Abstract: A usable 13.5 nm radiation source in which Sn is the radiation substance, in which rapid transport with good reproducibility is possible up to the plasma generation site and in which formation of detrimental "debris" and coagulation of the vapor are suppressed as much as possible is achieved using emission of Sn ions in that SnH 4 is supplied continuously or intermittently to the heating/ excitation part, is subjected to discharge heating and excitation or laser irradiation heating and excitation, and thus, is converted into a plasma from which extreme UV light with a main wavelength of 13.5 nm is emitted.
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公开(公告)号:JP3468215B2
公开(公告)日:2003-11-17
申请号:JP2000240002
申请日:2000-08-08
Applicant: ウシオ電機株式会社
IPC: C08J7/00 , B01J19/12 , H01J65/00 , H01L21/027 , H01L21/205 , H01L21/304
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公开(公告)号:JP4687436B2
公开(公告)日:2011-05-25
申请号:JP2005359327
申请日:2005-12-13
Applicant: ウシオ電機株式会社
CPC classification number: H01J65/046 , A61N5/0616
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公开(公告)号:JP4971665B2
公开(公告)日:2012-07-11
申请号:JP2006096971
申请日:2006-03-31
Applicant: ウシオ電機株式会社 , 公立大学法人名古屋市立大学
CPC classification number: A61N5/062 , A61N5/0616 , A61N2005/0661 , H01J65/046
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公开(公告)号:JP3702852B2
公开(公告)日:2005-10-05
申请号:JP2002026536
申请日:2002-02-04
Applicant: ウシオ電機株式会社
IPC: G03F7/40 , B01D53/34 , B01D53/70 , B01J19/12 , C02F1/32 , H01J65/00 , H01L21/027 , H01L21/205 , H01L21/302
CPC classification number: Y02W10/37
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