公开(公告)号：JP2003533881A

公开(公告)日：2003-11-11

申请号：JP2001584475

申请日：2001-05-16

Applicant: マットソン サーマル プロダクツ ゲゼルシャフト ミット ベシュレンクテル ハフツング

Inventor： レルヒ ヴィルフリート ,  ニース ユルゲン

IPC: H01L21/66 ,  C30B33/00 ,  H01L21/00 ,  H01L21/26 ,  H01L21/322 ,  H01L21/324

CPC classification number: H01L21/67017 ,  C30B29/06 ,  C30B33/00 ,  H01L21/3225 ,  H01L21/67115 ,  Y10S438/928

Abstract: The invention relates to a method for generating defect profiles in a crystal or crystalline structure of a substrate, preferably a semiconductor, during a thermal treatment in a process chamber. According to the inventive method, a concentration and/or a density distribution of defects is controlled with at least one reactive component each depending on at least two process gases that differ in their composition. At least two of the process gases independently act upon at least two different surfaces of the substrate.