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公开(公告)号：JPWO2016117628A1
公开(公告)日：2017-11-02
申请号：JP2016570691
申请日：2016-01-21
Applicant: 株式会社日立ハイテクノロジーズ
Inventor： 祟 市村 , 祟 市村 , 伊藤 博之 , 博之 伊藤 , 加藤 慎一 , 慎一 加藤 , 村越 久弥 , 久弥 村越 , 正 藤枝 , 藤枝 正 , 三宅 竜也 , 竜也 三宅 , 内藤 孝 , 内藤 孝 , 拓也 青柳 , 拓也 青柳 , 谷本 憲史 , 憲史 谷本
IPC: H01J37/16 , H01J37/12 , H01J37/147 , H01J37/153
CPC classification number: H01J37/16 , C23D5/02 , H01J9/18 , H01J37/065 , H01J37/12 , H01J37/147
Abstract: バナジウムガラスコートに基づく荷電粒子線装置の高性能化を実現する荷電粒子線装置、及び荷電粒子線装置用部材の製造方法を達成することを目的とする。内部空間が高真空に排気される金属容器と、前記金属容器の前記内部空間側の表面に形成されたコート層(161、162、163)とを備え、前記コート層(161、162、163)はバナジウムを含むガラス、つまり、非晶質であることを特徴とする真空部材を用いた荷電粒子線装置により達成する。高真空にしたい空間、例えば、電子源周辺部の壁にバナジウムガラスをコートすることで、電子源周辺部でのガス放出量を低減し、コート層でのゲッター効果により、局所排気を実施し、構造が複雑な空間でも大型の高真空ポンプを付けること無く、極高真空を達成する。
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公开(公告)号：JP4795883B2
公开(公告)日：2011-10-19
申请号：JP2006199072
申请日：2006-07-21
Applicant: 株式会社日立ハイテクノロジーズ
IPC: H01J37/244 , G01N23/225 , G03F1/84 , G03F1/86 , H01J37/10 , H01J37/28 , H01L21/027 , H01L21/66
CPC classification number: H01J37/28 , H01J37/244 , H01J37/266 , H01J2237/0492 , H01J2237/04924 , H01J2237/21 , H01J2237/221 , H01J2237/24564 , H01J2237/24571 , H01J2237/2816 , H01J2237/2817
Abstract: Pattern inspection and measurement technique where the failure of the detection of a secondary signal due to the variation of an optical condition of a primary electron beam or the occurrence of an electric field perpendicular to a traveling direction of the primary electron beam in a surface of a wafer is minimized, an SEM image the SN ratio of which is high and which hardly has shading in a field of view can be acquired and measurement such as measuring the dimensions and configuration of a measured object and inspecting a defect is enabled at high precision and high repeatability. A lens for converging a secondary signal is installed in a position which a traveling direction of the primary electron beam crosses or on a course of the secondary signal spatially separated from the primary electron beam by Wien filter. An SEM image always free of shading caused by the failure of the detection of a secondary signal in the field of view can be acquired by providing a unit that changes the setting of the lens according to the optical condition such as retarding voltage and an electrification control electrode of the primary electron beam.
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公开(公告)号：JP4908934B2
公开(公告)日：2012-04-04
申请号：JP2006160006
申请日：2006-06-08
Applicant: 株式会社日立ハイテクノロジーズ
IPC: H01L21/66 , G01N23/225 , H01J37/20 , H01J37/28
CPC classification number: H01J37/20 , G01R31/307 , H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/2008 , H01J2237/20235 , H01J2237/20292 , H01J2237/221 , H01J2237/24564 , H01J2237/24592 , H01J2237/28
Abstract: A semiconductor wafer inspection tool and a semiconductor wafer inspection method capable of conducting an inspection under appropriate conditions in any one of an NVC (Negative Voltage Contrast) mode and a PVC (Positive Voltage Contrast) mode is provided. Primary electrons 2 are irradiated onto a wafer to be inspected 6 and the irradiation position thereof is scanned in an XY direction. Secondary electrons (or reflected electrons) 10 from the wafer to be inspected 6 are controlled by a charge control electrode 5 and detected by a sensor 11. An image processor converts a detection signal from the sensor 11 to a detected image, compares the detected image with a predetermined reference image, judges defects, an overall control section 14 selects inspection conditions from recipe information for each wafer to be inspected 6 and sets a voltage to be applied to the charge control electrode 5. A Z stage 8 sets the distance between the wafer to be inspected 6 and the charge control electrode 5 according to this voltage.
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Patent Agency Ranking
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公开(公告)号：JP5174750B2
公开(公告)日：2013-04-03
申请号：JP2009158370
申请日：2009-07-03
Applicant: 株式会社日立ハイテクノロジーズ
IPC: H01J37/20 , G01N23/225 , H01J37/28 , H01L21/66
CPC classification number: H01J37/28 , H01J37/026 , H01J37/20 , H01J2237/004 , H01L22/12 , H01L2924/0002 , H01L2924/00
Abstract: Since charging characteristics differ between the outer circumferential portion and the center portion of a sample to be inspected, equivalent inspection sensitivities cannot be obtained in the outer circumferential portion and the center portion of the sample to be inspected. A sample cover is provided in the outer circumferential portion of a sample holder on which the sample to be inspected is placed. Charging characteristics of the sample cover are changed according to charging characteristics of the sample to be inspected. Consequently, uniform charged states can be formed in the outer circumferential portion and the center portion of the sample. Inspection/observation of the outer circumferential portion of the sample can be realized at higher sensitivity than in the past.
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7.发明专利
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公开(公告)号：JP4895569B2
公开(公告)日：2012-03-14
申请号：JP2005298311
申请日：2005-10-13
Applicant: 株式会社日立ハイテクノロジーズ
IPC: G01N23/225 , H01L21/66
CPC classification number: H01J37/073 , H01J37/026 , H01J37/28 , H01J2237/0048 , H01J2237/0635 , H01J2237/24564 , H01J2237/2594
Abstract: The invention solves charge nonuniformity of a specimen surface resulting from emission variation of a carbon nanotube electron source and individual difference of emission characteristics. During charge control processing, charge of the specimen surface is measured in real time. As means for solving charge nonuniformity resulting from nonuniformity of electron illumination density, electrons illuminating the specimen and the specimen are moved relatively to average electron illumination density. Moreover, an absorption current flowing into the specimen and the numbers of secondary electrons emitted from the specimen and of backscattered electrons are measured as means for monitoring charge of the specimen surface in real time.
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公开(公告)号：JP4230968B2
公开(公告)日：2009-02-25
申请号：JP2004211415
申请日：2004-07-20
Applicant: 株式会社日立ハイテクノロジーズ
CPC classification number: H01J37/21 , H01J37/265 , H01J37/28 , H01J2237/216 , H01J2237/24592 , H01J2237/2487 , H01J2237/2817 , H01J2237/2826
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