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公开(公告)号:JP4534235B2
公开(公告)日:2010-09-01
申请号:JP2007190890
申请日:2007-07-23
Applicant: 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
IPC: G01N23/04
Abstract: PROBLEM TO BE SOLVED: To observe the phenomenon generated within a device by directly applying voltage at a specific position within an LSI with design dimensions of about 0.1 μm. SOLUTION: This method comprises, in addition to a process for processing arbitrary area of an object sample into a fine sample piece by using charged particle beam and extracting the sample piece, a process for attaching fine conductors 30a and 30b to the extracted fine sample piece 72, and a process for applying voltage to the attached fine conductors. COPYRIGHT: (C)2008,JPO&INPIT
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公开(公告)号:JP4016970B2
公开(公告)日:2007-12-05
申请号:JP2004167930
申请日:2004-06-07
Applicant: 株式会社日立製作所
IPC: G01N1/28 , G01N23/00 , G01N1/32 , G01N27/62 , G01Q30/02 , G01Q30/08 , G01Q30/20 , H01J37/20 , H01J37/30 , H01J37/317
Abstract: PROBLEM TO BE SOLVED: To simplify work from a sample preparation to an observation, to prepare a sample in one device, and to easily transfer the prepared sample to an analyzer. SOLUTION: This sample preparing device is constituted of at least an irradiation optical system for emitting an ion beam, a secondary particle detecting means for detecting a secondary particle generated from a sample piece by irradiation of the ion beam, a side entry type of sample stage for mounting a sample holder for mounting the sample piece to fix the analytical sample, and a transfer means for transferring the picked-up sample provided by separating one portion of the sample piece to the sample holder. The work from the sample preparation up to the observation is simplified thereby, the sample is prepared in one device, the prepared sample is easy to be transferred to the analyzer, and the possibility of sample damage is reduced thereby. COPYRIGHT: (C)2005,JPO&NCIPI
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公开(公告)号:JP4012705B2
公开(公告)日:2007-11-21
申请号:JP2001223167
申请日:2001-07-24
Applicant: 株式会社日立ハイテクサイエンスシステムズ , 株式会社日立製作所
IPC: G01N23/04 , G01N1/28 , G01R31/28 , G01R31/302 , H01J37/20
Abstract: PROBLEM TO BE SOLVED: To observe a phenomenon that is generated in a device by directly applying a voltage to a specific section inside an LSI whose design dimensions are approximately 0.1 μm. SOLUTION: A process for mounting fine conductors 30a and 30b to an extracted fine sample piece 72, and a process for applying a voltage to the mounted fine conductors are added to a process for machining and extracting an arbitrary region in a target sample into fine sample pieces using charge particle beams.
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公开(公告)号:JP3778008B2
公开(公告)日:2006-05-24
申请号:JP2001176475
申请日:2001-06-12
Applicant: 株式会社日立製作所
IPC: G01N1/28 , G01N23/225 , G01N23/04 , H01J37/20 , H01J37/30 , H01L21/302 , H01L21/3065
Abstract: PROBLEM TO BE SOLVED: To provide a sample preparation device for a large diameter wafer, equipped with an introduction means of a TEM holder capable of preventing pressure increase in a vacuum vessel and contamination, for fixing a sample piece having the size of several μm, enabling quick observation, and having a sample chamber having a small volume. SOLUTION: This device is equipped with a sample stage for loading a sample thereon, a charged particle beam irradiation optical system, a secondary particle detection means for detecting secondary particles generated by irradiation of the charged particle beam, a sample piece separation means for separating the sample piece from the sample, a cassette for storing the sample, a sample transfer means for transferring the sample from the cassette to the sample stage, a cartridge for holding a sample holder for fixing the sample piece, a sample loading part for fixing the sample holder and the sample loading part, having a constitution mountable on and dismountable from a sample stage body part, a cartridge station for storing the cartridge, and a transfer means for transferring the cartridge from the cartridge station onto the sample stage from the outside of the vessel.
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公开(公告)号:JP4208031B2
公开(公告)日:2009-01-14
申请号:JP2008079493
申请日:2008-03-26
Applicant: 株式会社日立製作所
IPC: H01J37/317 , G01N1/28 , G01N23/225 , H01J37/20 , H01J37/28 , H01J37/30
Abstract: PROBLEM TO BE SOLVED: To achieve a minute sample processing observation device and a minute sample processing observation method where cross-sectional observation and analysis of a wafer cross section from a horizontal direction up to a vertical direction can be performed with high resolution, high precision and a high throughput, without breaking the wafer which is to become a sample. SOLUTION: The minute sample processing observation device includes a focused ion beam optical system and an electron optical system in the same vacuum device, as well as a probe 72 separating a minute sample including a desired region of the sample by a charged particle beam molding work and picking up the separated minute sample. COPYRIGHT: (C)2008,JPO&INPIT
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