公开(公告)号：JP2008027737A

公开(公告)日：2008-02-07

申请号：JP2006199072

申请日：2006-07-21

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： TEI TOMOKI ,  MAKINO HIROSHI ,  TANIMOTO NORIFUMI ,  OMORI KIYOKO

IPC: H01J37/244 ,  G01N23/225 ,  G03F1/84 ,  G03F1/86 ,  H01J37/10 ,  H01J37/28 ,  H01L21/027 ,  H01L21/66

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J37/266 ,  H01J2237/0492 ,  H01J2237/04924 ,  H01J2237/21 ,  H01J2237/221 ,  H01J2237/24564 ,  H01J2237/24571 ,  H01J2237/2816 ,  H01J2237/2817

Abstract: PROBLEM TO BE SOLVED: To provide a pattern inspection/measurement technique capable of providing an SEM image high in S/N and small in in-view shading by minimizing change of an optical condition of a primary electron beam or omission of a secondary signal due to generation of an electric field orthogonal to the traveling direction of a primary electron beam present on a wafer surface, and of executing measurement of dimension and shape with high accuracy and high repeatability for a measurement object, and measurement of a defect inspection or the like.
SOLUTION: This pattern inspection/measurement device is structured such that a secondary signal converging lens 69 is installed at a position of the crossover in the traveling direction of the primary electron beam, or on a path of a separated secondary signal by causing the secondary signal to spatially separate the primary electron beam by a Wien filter 18. By providing a means changing the setting of the secondary signal converging lens 69 in response to an optical condition of the primary electron beam (for instance, a retarding voltage, a charge control electrode or the like), an SEM image always preventing occurrence of in-view shading caused by omission of a secondary signal can be provided.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够通过最小化一次电子束的光学条件的变化或省略一个电子束的光学条件的改变来提供高S / N和较小的视野内阴影的SEM图像的图案检查/测量技术 由于产生与晶片表面上存在的一次电子束的行进方向正交的电场的二次信号，并且对测量对象执行高精度和高重复性的尺寸和形状的测量，以及缺陷检查的测量 或类似物。 解决方案：该图案检查/测量装置被构造成使得二次信号会聚透镜69安装在一次电子束的行进方向上的交叉位置处，或者通过引起分离的次级信号的路径 辅助信号通过维恩滤波器18在空间上分离初级电子束。通过提供响应于一次电子束的光学条件改变次级信号会聚透镜69的设置的装置（例如，延迟电压， 充电控制电极等），可以提供始终防止由省略二次信号而引起的视野内阴影的SEM图像。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006173035A

公开(公告)日：2006-06-29

申请号：JP2004367153

申请日：2004-12-20

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： SASAKI HIROKO ,  GUNJI YASUHIRO ,  TEI TOMOKI

IPC: H01J37/28 ,  H01J37/153 ,  H01J37/21

CPC classification number: H01J37/28 ,  H01J37/153 ,  H01J37/21 ,  H01J37/222 ,  H01J37/265 ,  H01J2237/141 ,  H01J2237/1532 ,  H01J2237/21 ,  H01J2237/221 ,  H01J2237/2817

Abstract: PROBLEM TO BE SOLVED: To provide a charged particle beam device having high resolution, and a wide scanning region (observational visual field).
SOLUTION: A means to adjust a focus, a means 45 to adjust astigmatism, a means to control and detect a scanning position, and a means to simultaneously control focus adjustment and astigmatism adjustment are provided, and achieving high resolution and securing a wide range of the observational visual field are made compatible.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供具有高分辨率和宽扫描区域（观察视场）的带电粒子束装置。

解决方案：提供调整焦点的手段，调整散光的手段45，控制和检测扫描位置的手段，以及同时控制焦点调整和像散调整的手段，实现高分辨率和固定 观察视野的广泛范围是兼容的。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2015043334A

公开(公告)日：2015-03-05

申请号：JP2014216829

申请日：2014-10-24

Applicant: 株式会社日立ハイテクノロジーズ ,  Hitachi High-Technologies Corp

Inventor： TEI TOMOKI ,  KOYAMA HIKARI ,  KIMURA YOSHINOBU ,  SHINADA HIROYUKI ,  KOMURO OSAMU

IPC: H01J37/147 ,  H01J37/20 ,  H01J37/22 ,  H01J37/24 ,  H01J37/28

CPC classification number: H01J37/28 ,  H01J2237/2803

Abstract: 【課題】走査型電子顕微鏡を用いた観察において、一次荷電粒子線照射起因帯電の影響を抑制し、二次電子の検出率を向上させることで二次元パターンの輪郭のコントラストを向上させると共にシェーディングを抑制できる好適な走査装置及び方法を提供する。【解決手段】GUIと、試料に関する情報を入力する試料情報入力手段と、該試料情報入力手段により入力することによって推奨走査条件が前記GUIに表示する表示手段と、該推奨走査条件を選択することによって前記試料に応じた走査線密度で走査することを特徴とする走査型電子顕微鏡。【選択図】図5

Abstract translation: 要解决的问题：为了提供合适的扫描装置和方法，其抑制由于一次带电粒子束的照射引起的充电的影响，在使用扫描电子显微镜的观察中，增强了二维图案的轮廓的对比度 同时通过提高二次电子的检测率来抑制阴影。解决方案：扫描电子显微镜包括GUI，用于输入关于样本的信息的样本信息输入装置和用于通过从GUI输入来显示推荐的扫描条件的显示装置 样本信息输入装置。 通过选择推荐的扫描条件，根据样品扫描线密度进行扫描。

公开(公告)号：JP2012169070A

公开(公告)日：2012-09-06

申请号：JP2011027364

申请日：2011-02-10

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： TEI TOMOKI ,  HITOMI KEIICHIRO

IPC: H01J37/147 ,  H01J37/20 ,  H01J37/22 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a scanning charged-particle microscope in which distortion of measurement, even of an insulator pattern, in the field of view can be suppressed by suppressing the impact of charging due to primary charged-particle beam irradiation during photographing, and suppressing change in the detection rate of secondary charged-particles.SOLUTION: In the scanning charged-particle microscope which forms the image of a scanning area by performing the scanning for the two-dimensional area on a specimen 8 so as to reverse the line scanning direction of a charged-particle beam 4 alternately, the distance between the scan lines of charged-particle beam 4 is adjusted based on the charging characteristics of the specimen 8 or the uniformity of lightness in the field of view of the specimen 8, when the specimen 8 is irradiated with the charged-particle beam 4.

Abstract translation: 要解决的问题：提供一种扫描带电粒子显微镜，其中可以通过抑制由于初次带电粒子束照射引起的充电的影响来抑制在视野中的测量甚至绝缘体图案的失真 并且抑制二次带电粒子的检测率的变化。 解决方案：在通过对样本8上的二维区域进行扫描以交替地反转带电粒子束4的线扫描方向而形成扫描区域的图像的扫描带电粒子显微镜中 根据样本8的充电特性或样本8的视野内的亮度均匀性，调整带电粒子束4的扫描线之间的距离，当样本8照射带电粒子时 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2008282630A

公开(公告)日：2008-11-20

申请号：JP2007124849

申请日：2007-05-09

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： YANO TASUKU ,  TEI TOMOKI ,  FURUKAWA TAKASHI ,  NASU OSAMU

IPC: H01J37/20 ,  H01J37/22

CPC classification number: G01N23/225 ,  H01J37/026 ,  H01J37/248 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/28

Abstract: PROBLEM TO BE SOLVED: To provide a charged particle beam device which prevents the effect of charging on the surface of a sample exposed to a primary charged particle beam when a plurality of frames are integrated to obtain an image of a given area on the sample.
SOLUTION: A given area on a sample wafer 78 is scanned with a primary electron beam from an electron gun 70 to generate secondary electrons. As generated secondary electrons are detected by a detector 63, a plurality of frames are generated and integrated to obtain an image of the given area. In generating the plurality of frames, when a judgment is made based on a detection signal from the detector 63 that a volume of charges in the given area has reached a specified value, a neutralizing voltage is applied to a boosting electrode 77 to eliminate or reduce charges before generation of the next frame. Hence the effect of charging is reduced when each frame is generated, so that the S/N of the image obtained by integrating the frames can be improved.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种带电粒子束装置，当多个框架被一体化以防止对暴露于初级带电粒子束的样品的表面上的充电效果以获得给定区域的图像时 例子。 解决方案：用来自电子枪70的一次电子束扫描样品晶片78上的给定区域以产生二次电子。 当由检测器63检测到产生的二次电子时，产生并整合多个帧以获得给定区域的图像。 在产生多个帧时，当基于来自检测器63的检测信号判断给定区域中的电荷量已经达到规定值时，将中和电压施加到升压电极77以消除或减少 在下一帧生成之前收费。 因此，当生成每个帧时，减少了充电的效果，从而可以提高通过对帧进行积分而获得的图像的S / N。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2007053035A

公开(公告)日：2007-03-01

申请号：JP2005238105

申请日：2005-08-19

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： TEI TOMOKI ,  MAKINO HIROSHI ,  KOYAMA HIKARI ,  SATO MITSUGI

IPC: H01J37/28 ,  H01L21/66

CPC classification number: G01N23/2251 ,  G01R31/307 ,  H01J37/026 ,  H01J37/28 ,  H01J2237/0044 ,  H01J2237/0047 ,  H01J2237/0048 ,  H01J2237/2816 ,  H01J2237/2817

Abstract: PROBLEM TO BE SOLVED: To provide an inspection and measuring device and an inspection and measuring method capable of measuring electrostatic charge potential of a test piece with high precision compared with a conventional technology and capable of measuring the charge potential with a simple structure. SOLUTION: With respect to a pattern inspection and measurement technology of such as a semiconductor device and a photomask using electron beam, fluctuations in charge potential on the surface of an inspecting test piece can be suppressed by optimizing the energy of a primary electron beam to be irradiated, when a S-shape curve is observed for the semiconductor device to become each inspection and measuring object. When the surface potential of the semiconductor device is measured by this device, more precise potential measurement than a conventional one becomes possible without almost affecting the original charge potential of an insulating film surface. Since the measurement of surface potential is possible without mounting a dedicated device for wafer surface potential measurement such as an energy filter, cost reduction of the device is also obtained. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种与常规技术相比能够高精度地测量试样的静电电荷的检查和测量装置和检查和测量方法，并且能够以简单的结构测量电荷电位 。 解决方案：关于半导体器件和使用电子束的光掩模的图案检查和测量技术，可以通过优化一次电子的能量来抑制检查试片的表面上的电荷电位的波动 当对于半导体器件观察到S形曲线成为每个检查和测量对象时，要照射的光束。 当通过该器件测量半导体器件的表面电位时，与常规电位测量相比，可以在几乎不影响绝缘膜表面的原始电荷电位的情况下进行更精确的电位测量。 由于在不安装用于诸如能量过滤器的晶片表面电位测量的专用装置的情况下可以测量表面电位，因此也可以获得装置的成本降低。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2013044547A

公开(公告)日：2013-03-04

申请号：JP2011180385

申请日：2011-08-22

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： SEKIGUCHI TOMOKO ,  OHASHI KENYOSHI ,  TANAKA JUNICHI ,  TEI TOMOKI ,  TOKIDA RURIKO ,  KAWADA HIROKI ,  OMORI KIYOKO

IPC: G01B15/04 ,  H01J37/28 ,  H01L21/027 ,  H01L21/66

CPC classification number: G06K9/4604 ,  B82Y10/00 ,  B82Y40/00 ,  G01B15/04 ,  G01N23/22 ,  G06T7/0004 ,  H01J37/3174 ,  H01J2237/221 ,  H01J2237/226 ,  H01J2237/2816 ,  H01J2237/31754 ,  H01J2237/31796 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To highly accurately estimate a shape and a dimension before shrink when measuring a length of resist to be shrunk by electron beam irradiation by CD-SEM.SOLUTION: A shrink database including pre-electron-beam-irradiation cross-sectional shape data, a cross-sectional shape data group and a CD-SEM image data group obtained under various electron beam irradiation conditions, and models based on them is prepared for various patterns, a CD-SEM image of a resist pattern to be measured is acquired (S102), the CD-SEM image and the shrink database are collated (S103), and the shape and the dimension before the shrink of the pattern to be measured are estimated and outputted (S104).

Abstract translation: 要解决的问题：当通过CD-SEM通过电子束照射测量要收缩的抗蚀剂长度时，高精度地估计收缩前的形状和尺寸。 解决方案：包括在各种电子束照射条件下获得的预电子束照射截面形状数据，横截面形状数据组和CD-SEM图像数据组的收缩数据库，以及基于它们的模型 准备各种图案，获取待测量的抗蚀剂图案的CD-SEM图像（S102），对CD-SEM图像和收缩数据库进行整理（S103），并且缩小之前的形状和尺寸 估计并输出要测量的图案（S104）。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012155980A

公开(公告)日：2012-08-16

申请号：JP2011013560

申请日：2011-01-26

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： MATSUI HIROYUKI ,  KOMURO OSAMU ,  NISHIHARA MAKOTO ,  TEI TOMOKI

IPC: H01J37/20 ,  H01J37/28

CPC classification number: H01J37/026 ,  H01J37/28 ,  H01J2237/0044 ,  H01J2237/047

Abstract: PROBLEM TO BE SOLVED: To provide a method of neutralizing a charged part, occurring in a region of a specimen irradiated with a charged particle beam, at high speed without mounting another device anew on a charged particle beam apparatus.SOLUTION: In a stage after irradiating a charged particle beam for measurement of a specimen before starting next measurement, a retarding voltage and/or an acceleration voltage is adjusted, and the operation is controlled so that neutralization is performed by reducing the difference between the value of the retarding voltage and the value of the acceleration voltage when compared with the difference during measurement. Since a charged part, occurring in a region of a specimen irradiated with a charged particle beam, can be neutralized without mounting another device on a charged particle beam apparatus, neutralization can be carried out without lowering the throughput.

Abstract translation: 要解决的问题：提供一种中和在带电粒子束照射的样本的区域中的带电部分的方法，而不是在带电粒子束装置上重新安装另一个装置。 解决方案：在开始下一次测量之前在照射用于测量样品的带电粒子束之后的阶段中，调整延迟电压和/或加速电压，并且操作被控制，使得通过减小差异进行中和 在测量期间与延迟电压的值和加速电压的值之间的差值。 由于在被带电粒子束照射的样本的区域中发生的带电部分可以在不将另一装置安装在带电粒子束装置上的情况下被中和，可以在不降低生产率的情况下进行中和。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2009170150A

公开(公告)日：2009-07-30

申请号：JP2008004407

申请日：2008-01-11

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： TEI TOMOKI ,  TSUNO NATSUKI

IPC: H01J37/28 ,  G01N23/225 ,  H01J37/20 ,  H01L21/027 ,  H01L21/66

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2817

Abstract: PROBLEM TO BE SOLVED: To provide a measuring device or an inspection device using a charged particle beam, in which both of a high sensitivity and a high stability of inspection are achieved. SOLUTION: In the inspection and measurement device, a static controlling electrode B421 is arranged on a side of a measurement testpiece or an inspection testpiece of a static controlling electrode A420, and in accordance with a static status of the testpiece, a constant voltage is impressed from a static controlling electrode controlling portion 423 of the static controlling electrode B, and variations of the static condition of a surface of the testpiece which is formed before inspection and a potential barrier are controlled. A retarding potential is impressed by a static controlling electrode controlling portion 66, and the static controlling electrode B421 is arranged below the static controlling electrode A420 which is adjusted in a same potential with the testpiece, and, as a result, a returning volume of a secondary beam 409, emitted from the testpiece such as a wafer 9 or the like on which a primary electron beam 19 is irradiated, can be adjusted and a highly sensitive inspection condition can be maintained stably during inspection. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种使用带电粒子束的测量装置或检查装置，其中实现了高灵敏度和高稳定性的检测。 解决方案：在检查和测量装置中，静电控制电极B421布置在静电控制电极A420的测量试件或检查试样的一侧，并且根据试件的静态状态，常数 静电控制电极B的静电控制电极控制部分423施加电压，并且控制在检查之前形成的试件的表面的静态状态和势垒的变化。 由静电控制电极控制部66施加阻滞电位，静电控制电极B421配置在与被试件相同电位的静电控制电极A420的下方，结果， 可以调节从诸如照射有一次电子束19的晶片9等的试样发射的次级光束409，并且可以在检查期间稳定地保持高灵敏度的检查条件。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009054508A

公开(公告)日：2009-03-12

申请号：JP2007222020

申请日：2007-08-29

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： TEI TOMOKI ,  YANO TASUKU ,  OMORI KIYOKO

IPC: H01J37/28 ,  H01J37/04 ,  H01J37/153 ,  H01L21/66

CPC classification number: G01N23/04

Abstract: PROBLEM TO BE SOLVED: To realize a charged particle beam system having a function for measuring a local electric charge potential of a sample.
SOLUTION: An image is acquired by scanning primary charged particle beams over the sample placed in a mirror state. It does not matter whether or not the acquired image is one of the sample or one of a component of a charged particle optical system. Locally charged potential is measured by comparing the acquired image with an image of the standard sample.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：实现具有测量样品的局部电荷电位的功能的带电粒子束系统。

解决方案：通过在以镜像状态放置的样品上扫描初级带电粒子束来获取图像。 所获取的图像是否是样本中的一个或带电粒子光学系统的分量中的一个是无关紧要的。 通过将所获取的图像与标准样品的图像进行比较来测量局部带电电位。 版权所有（C）2009，JPO＆INPIT