公开(公告)号：JP2010020919A

公开(公告)日：2010-01-28

申请号：JP2008177947

申请日：2008-07-08

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： RI UEN ,  MAKUUCHI MASAMI ,  IMAGAWA KENGO ,  TAKAHASHI MASAYOSHI ,  GUNJI YASUHIRO ,  FUNATSU RYUICHI

IPC: H01J37/147 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a forming method of a deflecting voltage can copy with both of PVC mode and NVC mode, and to provide a testing device can improve detection sensitivity by reducing scanning deviation of an electron beam caused by noises of a deflection control circuit in an electron beam type testing device based on an electrostatic deflector system of a multi-stage and multi-pole constitution. SOLUTION: In the electron beam type testing device, the deflection control means 2 to control the electrostatic deflector has a deflection waveform forming means 21 to form a deflection control signal, and a deflection signal output means 20 of applying different voltages to respective stages of the electrostatic deflector by amplifying formed control signals and by branching these amplified control signals. In order to apply the different voltages to the respective stages of the electrostatic deflector coping with the voltage set by a charged control means and applied to a charged control electrode, the deflection signal output means 20 has deflection voltage ratio switching means 203 to switch voltage ratios of the control signals applied to the respective stages of the electrostatic deflector. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种偏转电压的形成方法可以以PVC模式和NVC模式两者复制，并且提供一种测试装置可以通过减少由噪声引起的电子束的扫描偏差来提高检测灵敏度 基于多级和多极结构的静电偏转器系统的电子束型测试装置中的偏转控制电路。 解决方案：在电子束型测试装置中，用于控制静电偏转器的偏转控制装置2具有偏转波形形成装置21以形成偏转控制信号，偏转信号输出装置20将不同的电压施加到相应的 通过放大形成的控制信号并分支这些放大的控制信号，静电偏转器的阶段。 为了将不同的电压施加到静电偏转器的各个级，该电压对应于由充电的控制装置设定的电压并施加到充电的控制电极，偏转信号输出装置20具有偏转电压比率切换装置203，以切换电压比 施加到静电偏转器的各个级的控制信号。 （C）2010，JPO＆INPIT

公开(公告)号：JP2009129746A

公开(公告)日：2009-06-11

申请号：JP2007304305

申请日：2007-11-26

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： IMAGAWA KENGO ,  RI UEN ,  TAKAHASHI MASAYOSHI ,  GUNJI YASUHIRO ,  FUNATSU RYUICHI

IPC: H01J37/147 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide an SEM type inspection device improved in image quality and defect detection sensitivity by reducing pixel displacement when a two-dimensional image is formed by displacement of an electron beam irradiation position by deflection circuit noise generated in a constituent element of a beam deflection control circuit.
SOLUTION: In the inspection device using an electron beam, an electron beam deflection control circuit includes a first deflection circuit part generating a signal of a component in an electron beam running direction, and a second deflection circuit part generating a signal of a component in the moving direction of an inspection object sample, and further includes a setting means for independently setting deflection circuit characteristics of the first and second deflection circuit parts.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种SEM型检查装置，通过在通过在电子束照射位置产生的偏转电路噪声通过电子束照射位置的位移形成二维图像时减小像素位移，从而提高图像质量和缺陷检测灵敏度 光束偏转控制电路的构成元件。 解决方案：在使用电子束的检查装置中，电子束偏转控制电路包括产生电子束运行方向的分量的信号的第一偏转电路部分和产生电子束运动方向的信号的第二偏转电路部分 检测对象样品的移动方向上的分量，还包括用于独立设置第一和第二偏转电路部分的偏转电路特性的设定装置。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2005207899A

公开(公告)日：2005-08-04

申请号：JP2004015050

申请日：2004-01-23

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： SHICHIDA YOSHIYUKI ,  FUNATSU RYUICHI ,  NINOMIYA HIROSHI ,  GUNJI YASUHIRO

IPC: G01N23/225

Abstract: PROBLEM TO BE SOLVED: To prevent the deterioration of inspection performance, when using an electron beam, caused by a difference in contrast between inspection images owing to a difference in kind or density of an intra-chip circuit pattern in a specimen, as to an inspection device for detecting a defect by using an electron beam.
SOLUTION: According to this inspection method or device using a charged particle beam, at least two images obtained by scanning the specimen by means of the charged particle beam are compared with each other to extract a defect in the circuit pattern in the specimen. The specimen is continuously moved while a predetermined width is scanned by means of the particle beam. Inspection conditions are changed to obtain images in areas where circuit patterns are different in kind or density.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题为了防止检查性能的劣化，当由于样品中片内电路图案的种类或密度的差异而导致的检查图像之间的对比度差异引起的电子束时， 关于通过使用电子束检测缺陷的检查装置。

解决方案：根据该检查方法或使用带电粒子束的装置，将通过带电粒子束扫描样本获得的至少两个图像相互比较，以提取样本中的电路图案中的缺陷 。 在通过粒子束扫描预定宽度的同时连续移动样本。 检查条件被改变以在电路图案的种类或密度不同的区域中获得图像。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005116768A

公开(公告)日：2005-04-28

申请号：JP2003348951

申请日：2003-10-08

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： MIYAI YASUSHI ,  FUNATSU RYUICHI ,  NINOMIYA HIROSHI ,  NARA YASUHIKO

IPC: G01B15/04 ,  G01B15/08 ,  G01N21/956 ,  G01N23/225 ,  H01L21/66

CPC classification number: G01N23/2251 ,  G01N21/95607 ,  H01J2237/2817

Abstract: PROBLEM TO BE SOLVED: To provide an inspection method and an inspection device of a circuit pattern which can set an optimum threshold readily while recognizing at what threshold a defect detected in defect recognition can be detected, and can prepare a recipe readily.
SOLUTION: In the inspection of a circuit pattern, a sample with a circuit pattern formed in a surface is irradiated with electron beam, an inspection image and a reference image are produced based on secondary electron or reflection electron generated from the sample and an abnormal part is obtained from the difference between the inspection image and the reference image. A plurality of characteristic amounts of the abnormal part are obtained from an image of the abnormal part, and the abnormal part is displayed selectively by changing an inspection threshold which is set virtually about the characteristic amount.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供能够容易地设定最佳阈值的电路图案的检查方法和检查装置，同时识别在什么阈值下可以检测到缺陷识别中检测到的缺陷，并且可以容易地准备配方。 解决方案：在检查电路图形时，用电子束照射形成在表面上的电路图案的样品，基于从样品产生的二次电子或反射电子产生检查图像和参考图像，以及 从检查图像和参考图像之间的差异获得异常部分。 从异常部分的图像获得异常部分的多个特征量，并且通过改变几乎关于特征量的检查阈值来选择性地显示异常部分。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2008165990A

公开(公告)日：2008-07-17

申请号：JP2006350839

申请日：2006-12-27

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： TANIMOTO AKIYOSHI ,  OTA HIROYA ,  MAKINO HIROSHI ,  FUNATSU RYUICHI

IPC: H01J37/28 ,  G01N23/225 ,  H01J37/20 ,  H01J37/244 ,  H01L21/66

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J2237/0435 ,  H01J2237/2448 ,  H01J2237/24564 ,  H01J2237/24592

Abstract: PROBLEM TO BE SOLVED: To provide an electron beam application device capable of achieving charge control without reducing a throughput while maintaining good convergence of a primary beam for inspection. SOLUTION: A plurality of primary beams are formed from a single electron source, and charge of a sample is controlled by at least one primary beam, and at the same time, inspection of the sample is conducted by using another primary beam. Furthermore, surface electric field intensity is set independently on an irradiation region of the primary beam for charge control and an irradiation region of the primary beam for inspection. A current of the primary beam for charge control, and an interval between the primary beam of the charge control and the primary beam for inspection are controlled. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决的问题：提供一种电子束施加装置，其能够在不降低生产量的同时实现电荷控制，同时保持用于检查的主光束的良好收敛。 解决方案：从单个电子源形成多个主光束，并且通过至少一个主光束控制样品的电荷，同时通过使用另一个主光束来进行样品的检查。 此外，在用于充电控制的主光束的照射区域和用于检查的一次光束的照射区域上独立地设置表面电场强度。 用于充电控制的主光束的电流以及充电控制的主光束和用于检查的主光束之间的间隔被控制。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2004170395A

公开(公告)日：2004-06-17

申请号：JP2003361390

申请日：2003-10-22

Applicant: Hitachi High-Technologies Corp ,  Hitachi Sci Syst Ltd ,  株式会社日立サイエンスシステムズ ,  株式会社日立ハイテクノロジーズ

Inventor： FURUKI MASANARI ,  KUROSAWA KOICHI ,  KONNO TAKEHIKO ,  FUNATSU RYUICHI

IPC: G01N23/225 ,  G01N1/28 ,  H01J37/147 ,  H01J37/20 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To rapidly and accurately transmit positional information on a defect which is specified by a circuit pattern test apparatus in a form capable of being used even by another apparatus. SOLUTION: In the method, a marking is carried out around the defect by using a charged particle beam projecting mechanism being included in the test apparatus, and therefore, the positional information of the defect can be shared by other apparatuses. Deposition, charge up and the like caused by the projection of the charged particle beam are selected as a marking method. The marking is carried out inside the test apparatus, and thereby transmitting it to the other apparatuses more accurately and easily, and thereby improving analysis accuracy and shortening its analysis time. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：能够以能够被其他装置使用的形式快速且准确地发送由电路图案测试装置指定的缺陷的位置信息。 解决方案：在该方法中，通过使用包含在测试装置中的带电粒子束投影机构，在缺陷周围进行标记，因此可以由其他装置共享缺陷的位置信息。 选择由带电粒子束的投影引起的沉积，充电等作为标记方法。 标记在测试装置内进行，从而更准确，容易地将其发送到其他装置，从而提高分析精度并缩短分析时间。 版权所有（C）2004，JPO

公开(公告)号：JP2004117130A

公开(公告)日：2004-04-15

申请号：JP2002280142

申请日：2002-09-26

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： MIYAI YASUSHI ,  FUNATSU RYUICHI ,  NINOMIYA HIROSHI ,  NARA YASUHIKO

IPC: G01N23/225 ,  G06T1/00 ,  G06T7/00 ,  H01J37/22 ,  H01J37/26 ,  H01J37/28 ,  H01L21/66

CPC classification number: H01J37/28 ,  H01J37/265 ,  H01J2237/2817

Abstract: PROBLEM TO BE SOLVED: To provide an inspection method and an inspection device using an electron beam, which can extract a desired defect from a multitude of defects extracted by the inspection. SOLUTION: In the inspection device, the sample in which a pattern is formed is irradiated with the electron beam. An inspection image and a reference image are generated on the basis of secondary electrons or reflected electrons generated from the sample. An abnormal part is obtained by the difference between the gradation values for respective pixels of the inspection image and the reference image. A plurality of characteristic amounts of the abnormal part are obtained from the image of the abnormal part. The range for classifying the kind of the abnormal part is designated, on the basis of the distribution of the plurality of characteristic amounts of the abnormal part. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004031379A

公开(公告)日：2004-01-29

申请号：JP2002180735

申请日：2002-06-21

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： GUNJI YASUHIRO ,  NINOMIYA HIROSHI ,  FUNATSU RYUICHI ,  INADA YOSHIKAZU ,  YAMAMOTO KENJIRO ,  NOZOE MARI

IPC: G01R31/302 ,  H01J37/22 ,  H01J37/28 ,  H01L21/66

CPC classification number: G01R31/305 ,  H01J37/222 ,  H01J37/244 ,  H01J37/268 ,  H01J37/28 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2594 ,  H01J2237/2817

Abstract: PROBLEM TO BE SOLVED: To provide an inspection method using an electron beam and an inspection device which realize a more detailed and fixed quantity evaluation with a high throughput.
SOLUTION: This inspection method comprises a process for irradiating an electron beam plural times at predetermined spacing against a defect and its periphery based on a defective position information on a sample surface which is prepared beforehand; a process for detecting an electric signal which generates secondarily by the electron beam from the sample surface; a process for visualizing an electronic signal detected by electron beam irradiation of n
th times, which is specified beforehand; and a process for monitoring the electrification relaxation condition of the sample surface by the information of the electron beam image, and measuring the resistance value or the leakage quantity of the defective part on the sample surface depending on the degree of electrification relaxation.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2008215969A

公开(公告)日：2008-09-18

申请号：JP2007052166

申请日：2007-03-02

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： TANIMOTO AKIYOSHI ,  OTA HIROYA ,  MAKINO HIROSHI ,  FUNATSU RYUICHI

IPC: G01N23/225 ,  H01J37/28 ,  H01L21/66

CPC classification number: G01N23/225 ,  H01J37/265 ,  H01J37/28

Abstract: PROBLEM TO BE SOLVED: To provide a charged particle beam applying apparatus capable of reconciling high flaw detection sensitivity and high inspection speed, with respect to a sample having various characteristics in a multibeam-type semiconductor inspection device.
SOLUTION: The arrangement of a primary beam on the sample is made variable and beam arrangement for inspecting the sample at a high speed in the optimum inspection specifications, on the basis of the characteristics is further extracted. A large number of optical parameters and apparatus parameters are optimized. Furthermore, the characteristics of the extracted primary beam are measured and adjusted.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够调和高瑕疵检测灵敏度和高检查速度的带电粒子束施加装置相对于在多光束型半导体检查装置中具有各种特性的样品。 解决方案：进一步提取样品上的主光束在样品上的布置，并根据特性进一步提取用于在最佳检测规格中高速检查样品的光束布置。 优化了大量的光学参数和设备参数。 此外，测量和调整提取的一次光束的特性。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2009301812A

公开(公告)日：2009-12-24

申请号：JP2008153638

申请日：2008-06-12

Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

Inventor： GUNJI YASUHIRO ,  FUJII KEN ,  TAKAHASHI HIROYUKI ,  FUNATSU RYUICHI ,  HONDA TOSHIFUMI

IPC: H01J37/21 ,  H01J37/28 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide an excellent apparatus and method achieving highly sensitive defect-detecting performance without bringing about degradation of focusing accuracy, even in case contrast at defective portions is not enough obtained due to special features of a wafer.
SOLUTION: An SEM system appearance inspection method and a device thereof, in which, after loading a sample on a portable stage and carrying out measurement of a height of the sample, electron beams are scanned over the sample to find a defective part from an image thus obtained, include a height measurement with a correction processing function through stage movement.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：即使在由于晶片的特殊性而不能获得缺陷部分的对比度的情况下，也可以提供一种实现高灵敏度缺陷检测性能而不会导致聚焦精度降低的优良装置和方法。 解决方案：SEM系统外观检查方法及其装置，其中在将样品装载在便携式载物台上并进行样品的高度测量之后，将电子束扫描在样品上以找到缺陷部分 根据这样获得的图像，通过平台移动包括具有校正处理功能的高度测量。 版权所有（C）2010，JPO＆INPIT