Abstract:
PROBLEM TO BE SOLVED: To provide an inspection device which can perform measurement with high accuracy by an inexpensive structure.SOLUTION: An inspection device for inspecting a sample by deflecting an electron beam and has: an electron gun for emitting the electron beam; a deflector 109 for deflecting electron beams; a deflection control unit 101 for controlling the deflector; a digital/analog converter 102 for converting a deflection signal of the deflection control unit 101 into an analog signal; an inverted amplifier 103 for changing polarity of an output signal of the digital/analog converter 102 and outputting the signal; a non-inverted amplifier 106 for outputting the output signal of the digital/analog converter 102 without changing the polarity; variable delay parts 104 and 107 for varying a delay amount of a signal; and a delay control unit 110 for controlling delay amounts of the variable delay parts 104 and 107. The delay amounts of the variable delay parts 104 and 107 are adjusted by control by the delay control unit 110, so that delay difference between the inverted amplifier 103 and the non-inverted amplifier 106 is eliminated, and an astigmatic error is cancelled highly accurately and inexpensively.
Abstract:
PROBLEM TO BE SOLVED: To solve such a problem that noise is generated for a deflection signal and a detection signal between the control circuit of a charged particle beam device and a controlled apparatus, and a problem that maintenance is difficult in a sample chamber when the cable connecting the control circuit and the controlled apparatus is shortened in order to reduce noise, and to provide a charged particle beam device which can produce a high-quality image, in which the impact of noise is reduced, without sacrifice of maintainability.SOLUTION: The charged particle beam device comprises a column for irradiating a sample with a charged particle beam, a control unit for controlling the internal apparatus of the column, and a moving mechanism for moving the control unit. The control unit is located in the vicinity of the column when an image is acquired by irradiating a charged particle beam, and can move to recede from the column during maintenance.
Abstract:
PROBLEM TO BE SOLVED: To realize an electron beam drawing apparatus which can calculate an optimal moving speed of a test piece table without invalid drawing, and optimally control the speed of the test piece to shorten the drawing processing time. SOLUTION: Drawing date are output to a graphic disassembling part 3, it is disassembled at a size enough to be shot, and then the disassembled data are stored in a drawing data buffer 4. A counter 7 meters the number of irradiation times of electron beam in a sub-field output by the disassembling part 3, and the result is output to a test piece speed computation part 17. The data stored in the data buffer 4 is read out by a correction computation part 5, and a sub-field coordinate under drawing is output to a test piece table control unit 14. The data buffer 4 stores a drawing data larger than one sub-field, and the operation of the disassembling part 3 and the computation part 5 is made to have a phase difference by one sub-field or more, and then the number of the drawing data that advances by one or more from the sub-field under drawing is output to the computation part 17. The test piece table control unit 14 calculates the optima moving speed of the test piece table 13 according to the number 16 of data for each of output sub-fields of the counter 7, so as to control the test piece table moving speed. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a measurement and inspection device of a scanning type electron beam system, and to provide a technology capable of achieving high-accuracy measurement and inspection depending on a scanning speed.SOLUTION: A secondary electron signal detection system in a measurement and inspection device deals with scanning control of a plurality of scanning speeds, and comprises: a detector 107 for detecting a secondary electron signal (SE) resulted from irradiation of an electron beam to a sample 110 by the scanning control; a preamplifier 30 for performing a current-voltage conversion of an output of the detector 107 to pre-amplify the converted output; an analog signal processing amplification part 51 for receiving an output of the preamplifier 30 and performing analog processing amplification of the output, and an ADC (Analog-Digital Conversion part) 52 for performing analog-to-digital conversion of an output of the analog signal processing amplification part 51, as a secondary electron signal detector 50; and an image processing part 205 for generating a measurement or inspection image on the basis of an output of the secondary electron signal detector 50. The controller 210 performs switching control of each part including a LPF (12) in the analog signal processing amplification part 51 depending on a scanning speed and the like.
Abstract:
PROBLEM TO BE SOLVED: To provide a high-sensitivity, a high-throughput electron beam type inspection device and an inspection method for alleviating artificial defects caused by scanning shift of primary electron beams. SOLUTION: A semiconductor inspection device with a plurality of primary electron beams is provided with an adjustment means for setting a position where the plurality of primary electron beams are emitted to a sample for inspection. An irradiation positions of the plurality of primary electron beams on the sample are set in accordance with a repetition pattern interval of the sample for the inspection, and repetition pattern images of the comparison object are obtained at the same time. On the plurality of images obtained at the same time, scanning shift of the primary electron beams is the same at places of the repetition pattern to be compared. For that, artificial defects caused by the scanning shift of the electron beams are eliminated on the images, whereby a high-sensitivity, the high-throughput electron beam type inspection device, and the inspection method can be provided. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To prevent a circuit pattern inspection device from decreasing in operation rate by measuring image noise of the circuit pattern inspection device and detecting a sign for an abnormal device state. SOLUTION: The circuit pattern inspection device, which detects abnormality of a circuit pattern by irradiating a substrate where the circuit pattern is formed with an electron beam and detecting a secondary electron or reflected electron, includes: an image processing section which generates an image based upon the signal intensity of the detected secondary electron or reflected electron and displays the image on a display device of an interface; and a control section which performs frequency analysis of noise included in the image. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an excellent apparatus and method achieving highly sensitive defect-detecting performance without bringing about degradation of focusing accuracy, even in case contrast at defective portions is not enough obtained due to special features of a wafer. SOLUTION: An SEM system appearance inspection method and a device thereof, in which, after loading a sample on a portable stage and carrying out measurement of a height of the sample, electron beams are scanned over the sample to find a defective part from an image thus obtained, include a height measurement with a correction processing function through stage movement. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an electron-beam exposure method properly correcting the slippage of a μ field forming a drawing pattern and having the excellent accuracy of a drawing at a high speed. SOLUTION: The electron-beam exposure method has a means for generating a plurality of beams arrayed in a latticed shape, a means for converting the drawing pattern into the on/off-information of the beams, a means for separately turning a plurality of the beams on/off, and a means for obtaining the correcting volume of latticed shape of the corrected beams. The electron-beam exposure method further has a means for independently controlling places of the plurality of irradiated beams, and correcting the latticed shapes of the plurality of beams, a means for simultaneously deflecting the places of the plurality of irradiated beams arrayed in the latticed shape, and a means for correcting deflecting shapes in the case of simultaneous deflections. Drawing is performed while correcting the latticed shape and simultaneous deflecting shapes of the plurality of beams. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a method of controlling to move a sample stand of electron beam drawing that is reduced in vibration and with good drawing accuracy. SOLUTION: The drawing region of the sample is partitioned into a sub-drawing region zone which performs a column to the moving direction of the sample stand and a sub-sub drawing region zone for partitioning the sub-drawing region zone in a direction intersecting perpendicularly to the moving direction of the sample stand. The drawing repeating the irradiation scanning of an electron beam is performed at a unit of the sub-sub drawing region zone. A target position value for each sub-sub-drawing region zone used for controlling the moving of the position is obtained in response to the size of the sub-sub drawing region zone occupying in the sub-drawing region zone. When the drawing of each sub-sub drawing region zone is sequentially performed from one end of the sub-drawing region zone toward the other end, the moving control of the sample stand is performed according to the position value of the moving target of the sample stand to be added with the target position value whenever the turn of the drawing is advanced. COPYRIGHT: (C)2006,JPO&NCIPI