公开(公告)号：JP2010021345A

公开(公告)日：2010-01-28

申请号：JP2008180222

申请日：2008-07-10

Applicant: Hitachi Ltd ,  Iwate Univ ,  国立大学法人岩手大学 ,  株式会社日立製作所

Inventor： SAEKI TOMONORI ,  MORI MASAYUKI

IPC: H01L21/66 ,  C10M105/04 ,  C10M105/74 ,  C10M109/02 ,  C10M135/18 ,  C10M135/20 ,  C10M137/04 ,  C10M137/12 ,  C10N10/12 ,  C10N40/06 ,  H01J37/20

Abstract: PROBLEM TO BE SOLVED: To provide a charged particle beam apparatus in which a driving part has high stability and reliability by preventing a lubricant applied to a slide portion from being used up before maintenance of the apparatus. SOLUTION: The charged particle beam apparatus has the lubricant applied to the slide portion of a moving member moving in a vacuum chamber, wherein the lubricant satisfies the followings. (1) A cumulative slide time (induction time) for starting decomposition reaction of the lubricant in a depressed state is ≥140 hours. (2) Depression (critical surface pressure) which causes decomposition reaction of the lubricant is ≥0.5 GPa. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种带电粒子束装置，其中驱动部件具有高的稳定性和可靠性，通过防止在维护装置之前施加到滑动部分的润滑剂被用尽。 解决方案：带电粒子束装置具有施加到在真空室中移动的移动构件的滑动部分的润滑剂，其中润滑剂满足以下要求。 （1）润滑剂处于低压状态下的开始分解反应的累积滑动时间（诱导时间）≥140小时。 （2）导致润滑剂分解反应的抑制（临界表面压力）≥0.5GPa。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2008305685A

公开(公告)日：2008-12-18

申请号：JP2007152231

申请日：2007-06-08

Applicant: Hitachi Ltd ,  株式会社日立製作所

Inventor： SAEKI TOMONORI

IPC: H01J37/20

Abstract: PROBLEM TO BE SOLVED: To provide a method for efficiently cleaning a desired cleaning spot on the inner surface of a vacuum device without giving damage to the inner surface of a vacuum chamber nor heating resin components disposed outside the vacuum chamber more than required, with respect to the vacuum device represented by an electron microscope.
SOLUTION: The desired cleaning spot on the inner surface of the device is irradiated with an infrared ray with a wavelength of 6-8 μm. Energy is given to an organic substance molecule desired to be dissociated by heating, and cleaning which suppresses the heating of the wall surface of the device to the minimum becomes possible thereby. As a result, a cleaning speed increases, and the throughput of the device can be improved. The vacuum chamber can be cleaned without giving damage to a resin material disposed outside the vacuum chamber.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于有效地清洁真空装置的内表面上的所需清洁点的方法，而不会对真空室的内表面造成损害，也不会对设置在真空室外的树脂组件加热超过所需清洁点 相对于由电子显微镜表示的真空装置。 解决方案：使用波长为6-8μm的红外线照射装置内表面上所需的清洁点。 通过加热将期望分解的有机物质分子赋予能量，从而能够将抑制器件的壁面的加热抑制到最小的清洗。 结果，清洗速度提高，能够提高装置的生产量。 可以对真空室进行清洁，而不会对设置在真空室外部的树脂材料造成损害。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2014221936A

公开(公告)日：2014-11-27

申请号：JP2013101802

申请日：2013-05-14

Applicant: 株式会社日立製作所 ,  Hitachi Ltd

Inventor： AKABORI TOMOHIKO ,  SAEKI TOMONORI ,  OKAMOTO MASAHIDE

IPC: C22B59/00 ,  B09B5/00 ,  C22B5/04 ,  C22B7/00 ,  C22B9/02 ,  C22B9/10

CPC classification number: Y02P10/234

Abstract: 【課題】溶融金属抽出法により希土類磁石から、Dyを含む希土類金属を高効率に回収する方法を提供する。【解決手段】希土類金属を有する磁石10から、溶融した液体のマグネシウムとカルシウムの混合物20,30に前記希土類金属を抽出させる抽出工程と、前記希土類金属が抽出された磁石と、前記希土類金属を溶解させた液体のマグネシウムとカルシウムの混合物を分離する分離工程と、前記分離された希土類金属を含む液体のマグネシウムとカルシウムの混合物から、前記マグネシウムとカルシウムを気化させることによって、前記希土類金属を回収する希土類金属回収工程と、前記気化させたマグネシウム及びカルシウムを凝縮または固化させて回収するマグネシウム、カルシウム回収工程と、を含み、前記抽出工程において、溶融金属にマグネシウムとカルシウムの混合物を用いることを特徴とする希土類金属回収方法。【選択図】図1

Abstract translation: 要解决的问题：提供通过熔融金属萃取方法从稀土磁体中回收稀土金属（包括Dy）的方法。解决方案：回收稀土金属的方法包括：提取稀土金属从 将含有稀土金属的磁体10熔融到液态镁和钙的混合物中;分离步骤，用稀土金属萃取从磁体中分离与稀土金属溶解的液态镁和钙的混合物，稀土金属回收步骤 通过蒸发镁和钙从液体镁和钙的混合物中回收稀土金属和通过冷凝或固化蒸发的镁和钙来回收镁和钙的镁钙回收步骤。 在提取步骤中，使用镁和钙的混合物作为熔融金属。

公开(公告)号：JP2004134600A

公开(公告)日：2004-04-30

申请号：JP2002298228

申请日：2002-10-11

Applicant: Hitachi Ltd ,  株式会社日立製作所

Inventor： HIRANO SHINYA ,  SAEKI TOMONORI ,  TSUGANE MASARU ,  ASAI TARO

IPC: H01L21/308 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide cleaning liquid which can remove metallic contaminants stuck to a surface and the like without damaging a ground silicon surface.
SOLUTION: Cleaning liquid whose composition is displayed by wt. % and in which hydrogen fluoride: nitric acid:surface-active agent are in a range of 0.1 to 7.1:60.0 to 69.8:0.3 to 2 or cleaning liquid in which hydrogen fluoride:nitric acid:acetic acid are in the range of 0.4 to 0.5:30.0 to 60.0:19.0 to 55.0 suppresses face roughness of the silicon surface. Metallic materials on the silicon surface, a rear face and a bevel part can remarkably effectively be removed.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2014055312A

公开(公告)日：2014-03-27

申请号：JP2012199564

申请日：2012-09-11

Applicant: Hitachi Ltd ,  株式会社日立製作所 ,  Kansai Univ ,  学校法人 関西大学

Inventor： SAEKI TOMONORI ,  SHIBATA HAYAJI ,  TANAKA TOMOHITO

IPC: C22B7/00 ,  B09B3/00 ,  C02F1/62 ,  C22B3/04 ,  C22B3/26 ,  C22B3/44 ,  C22B23/00 ,  C22B26/12 ,  H01M10/54

CPC classification number: B09B3/00 ,  C22B3/44 ,  C22B7/00 ,  C22B23/0453 ,  C22B26/12 ,  Y02P10/234 ,  Y02W30/84

Abstract: PROBLEM TO BE SOLVED: To provide a method for separating and recovering lithium, cobalt and the like in a high yield, which method can be operated via simple steps inexpensively, by utilizing a minimum amount of acid or alkali.SOLUTION: Provided is a method comprising vacuum firing, grinding, sieving, and having water apply for extraction of the thus-sieved product, thereby having lithium selectively leaching out. When lithium is separated from iron or aluminum eluted out in a trace amount, after leaching out of lithium with water, a solvent extraction is carried out with addition of a complex-forming agent thereto. Desirably, an oil phase obtained by the solvent extraction is further subjected, for example, by using a solution containing a lithium compound in a high concentration, to crystallization and separation, under conditions in which the crystallization of the lithium compound is proceeded with the separation. Further, an acid is applied to the residue from which lithium is leached out by water, to have cobalt selectively leach out.

Abstract translation: 要解决的问题：为了提供以高产率分离和回收锂，钴等的方法，可以通过使用最少量的酸或碱，通过简单的步骤廉价地操作该方法。解决方案：提供一种方法 包括真空烧制，研磨，筛分，并且具有水用于提取如此筛选的产品，从而使锂选择性地浸出。 当将锂与微量溶出的铁或铝分离时，用水浸出锂后，通过向其中加入络合物形成剂进行溶剂萃取。 优选通过溶剂萃取获得的油相例如通过使用含有高浓度的锂化合物的溶液进行结晶分离，在其中进行锂化合物的结晶的条件下进行分离 。 此外，将酸被施加到由水浸出锂的残渣中，以使钴选择性地浸出。

公开(公告)号：JP2014046395A

公开(公告)日：2014-03-17

申请号：JP2012191054

申请日：2012-08-31

Applicant: Hitachi Ltd ,  株式会社日立製作所

Inventor： SAEKI TOMONORI ,  AKABORI TOMOHIKO ,  SATO KAZUNORI

IPC: B23P17/00 ,  C22B1/00 ,  C22B7/00 ,  C22B59/00 ,  C23G5/00

CPC classification number: Y02P10/212

Abstract: PROBLEM TO BE SOLVED: To provide a method for peeling a plated coating film from a magnet surface where the load of waste liquid treatment and the like is small, which can be performed in a simple facility, where the oxidation of a metal can be prevented, where impurities are not remained on a metal surface and which is safe.SOLUTION: Cavitation jet is spouted in water toward a magnet coated by plating. Shock waves are generated when generated cavitation collapses on the surface of the magnet coated by plating. A plated coating film is peeled by generating shear force between the plated coating film and the base magnet due to stress generated by the shock waves in the plated coating film.

Abstract translation: 要解决的问题：提供一种从废液处理等的负荷等的磁体表面剥离镀覆膜的方法，其可以在可以防止金属氧化的简单设备中进行 其中杂质不残留在金属表面上并且是安全的。解决方案：气蚀喷嘴在水中喷射到通过电镀涂覆的磁体上。 当通过电镀涂覆的磁体的表面上产生的空化塌陷时，产生冲击波。 由于电镀膜中的冲击波产生的应力，在镀覆膜和基体磁体之间产生剪切力而剥离镀覆膜。

公开(公告)号：JP2004172326A

公开(公告)日：2004-06-17

申请号：JP2002335932

申请日：2002-11-20

Applicant: Hitachi Ltd ,  株式会社日立製作所

Inventor： JINOKA TOSHINORI ,  KATSUMURA NOBUHITO ,  SAEKI TOMONORI ,  KATSUMURA YOSHITERU

IPC: B24B37/00 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a polishing slurry for polishing a platinum-base metal film with CMP method and to provide a manufacturing method having high electrical reliability, for a semiconductor device having a lower electrode consisting of the platinum-base metal film. SOLUTION: An SiO 2 film 13 is formed on an insulating film embedded with plugs 11. Then, holes (openings) 14 are formed in the SiO 2 film 13, followed by forming an Ru film 15 which is the platinum-base metal film in the holes 14 and on the SiO 2 film. The resultant is polished by CMP method using the polishing slurry comprising periodic acid, benzotriazole and abrasive grain to form lower electrodes consisting of the platinum-base metal film inside the openings. Thereafter, a dielectric film and a film serving as upper electrodes are sequentially formed. Since polished surfaces of the lower electrodes are remarkably flat and smooth, leakage current that flows through the dielectric film is suppressed to remarkably improve retention characteristics for information charges which are stored in a capacitor. Thus, time for retaining the stored information charges is increased, which in turn ensures high reliability in the capacitor. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2002217387A

公开(公告)日：2002-08-02

申请号：JP2001011099

申请日：2001-01-19

Applicant: HITACHI LTD

Inventor： ASANO ISAMU ,  HIRATANI MASAHIKO ,  SAEKI TOMONORI ,  NISHIDA TAKASHI

IPC: H01L27/10 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To ensure satisfactory continuity of the lower-part electrode of a capacitive element for information storage to a plug. SOLUTION: The surface layer of a silicon oxide film 37 including the inside of a groove 38 is spin-coated with a solution containing Ru as a main composition, it is dried at about 600 to 700 deg.C, a seed layer 39 constituted of the Ru is formed, and an Ru film is deposited by a CVD method while the seed layer 39 is used as a seed. By the seed layer 39 formed on the inside wall of the groove 38, the incubation time is shortened when the Ru film is formed by the CVD method, the surface of the plug 35 is hardly exposed to oxygen, and the continuity of the Ru film to the plug 35 can be ensured.

公开(公告)号：JP2002025964A

公开(公告)日：2002-01-25

申请号：JP2000206828

申请日：2000-07-04

Applicant: HITACHI LTD

Inventor： HARA KOJI ,  TAKAHARA YOICHI ,  SAEKI TOMONORI ,  TOMIOKA HIDEKI ,  ITO MASAKI ,  TSUGANE MASARU ,  ITO HARUO ,  FUNAHASHI TOMOMASA

IPC: H01L21/28 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/3213 ,  H01L23/52 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To protect electrodes or wirings formed of high-melting metal nitride against etching at cleaning after the electrodes or wirings are formed in the manufacture of a semiconductor device provided with the electrodes or wirings formed of high-melting metal nitride. SOLUTION: A semiconductor device manufacturing method comprises a first process of forming conductor films that contain high-melting point nitride films on a semiconductor substrate, a second process of patterning the conductor films into required forms, and a third process of cleaning the patterned conductor films. A cleaning solution used in the third process of cleaning the patterned conductor films is a mixed solution of quaternary ammonium hydroxide represented by general formula, [(R1)nN(R)4-n]+OH- (R1 is a 1-2C alkyl group, R is a 1-2C alkyl group or a 1-2C hydroxy-substituted alkyl group, and R1 and R may be identical to each other or different from each other. n is an integer of 1 to 3), a hydrogen peroxide solution, and pure water.

公开(公告)号：JP2002184830A

公开(公告)日：2002-06-28

申请号：JP2000381650

申请日：2000-12-11

Applicant: HITACHI LTD

Inventor： KANDA NAOKI ,  KANAI MISUZU ,  FURUKAWA RYOICHI ,  YOSHIDA MASAYOSHI ,  SAEKI TOMONORI

IPC: G01N27/00 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a technique of specifying the position of a microscopic defect in an insulating film with high accuracy. SOLUTION: An insulating film and Pt electrodes which are electrically connected with a silicon substrate are dipped in an Na2Au(SO3)2 electrolyte, a pulse voltage is applied between the silicon substrate, and the Pt electrodes and Au particles of a diameter of 10 nm or shorter are precipitated on a defect in the insulating film.