公开(公告)号：JP2013128032A

公开(公告)日：2013-06-27

申请号：JP2011276733

申请日：2011-12-19

Applicant: Nuflare Technology Inc ,  株式会社ニューフレアテクノロジー

Inventor： YOSHIKAWA RYOICHI ,  OGASAWARA MUNEHIRO

IPC: H01L21/027 ,  H01J37/244 ,  H01J37/305

CPC classification number: G21K5/04 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/2059 ,  G03F7/2065 ,  G21K5/10 ,  H01J37/302 ,  H01J37/304 ,  H01J37/3177 ,  H01J2237/24507 ,  Y10S430/143

Abstract: PROBLEM TO BE SOLVED: To provide a lithography apparatus capable of efficiently drawing with high accuracy even if beams are always turned off or improper beams whose irradiation amount cannot be controlled occur in lithography by a multiple beam method.SOLUTION: A multiple charged particle beam lithography apparatus of one aspect of the present invention includes: a detector for detecting improper beams in multiple beams passing through a plurality of apertures in an aperture member; a setting section for setting a partial area so as to include more apertures in residual apertures except apertures through which improper beams pass in the plurality of apertures in the aperture member; and a lithography processing control section for controlling lithography processing so that patterns are drawn on a sample by using multiple beams formed by beams passing through apertures in the partial area.

Abstract translation: 要解决的问题：为了提供一种光刻设备，即使光束总是被关闭，或者通过多光束法在光刻中不能控制照射量的不正确的光束，可以高精度地高效地绘制。 解决方案：本发明的一个方面的多带电粒子束光刻设备包括：检测器，用于检测通过孔径构件中的多个孔的多束光束中的不正确光束; 设置部分，用于设置部分区域，以便在不同光束通过孔径构件中的多个孔中的孔之外包括除了孔之外的剩余孔中的更多孔; 以及光刻处理控制部分，用于控制光刻处理，使得通过使用由穿过局部区域中的孔的光束形成的多个光束在样本上绘制图案。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013069847A

公开(公告)日：2013-04-18

申请号：JP2011207094

申请日：2011-09-22

Applicant: Nuflare Technology Inc ,  株式会社ニューフレアテクノロジー

Inventor： OGASAWARA MUNEHIRO ,  HIGASHIYA TAKANAO

IPC: H01L21/027 ,  H01J37/141 ,  H01J37/305

Abstract: PROBLEM TO BE SOLVED: To provide a beam apparatus loaded with an electromagnetic lens capable of generating a magnetic field over the limit due to saturation in characteristics of a yoke itself.SOLUTION: A charged particle beam apparatus includes: an electron gun 201 which discharges charged particle beams; and an objective lens 207 which has a coil, a yoke for disposing the coil thereinside, and a permanent magnet disposed so that a closed loop is configured in the direction opposite to the direction of a magnetic field line due to the coil by the direction of the magnetic field line to be generated by passing the magnetic field line to be generated through the yoke itself, and which refracts the charged particle beams.

Abstract translation: 要解决的问题：提供一种装载有由于轭本身的特性饱和而能够在极限上产生磁场的电磁透镜的束装置。 解决方案：带电粒子束装置包括：放电带电粒子束的电子枪201; 以及物镜207，其具有线圈，用于将线圈设置在其内部的磁轭和设置成使得闭环由于线圈沿与磁场线方向相反的方向而被配置为沿着与线圈相反的方向 通过使通过轭本身产生的磁场线产生的磁场线，并且折射带电粒子束。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2010232204A

公开(公告)日：2010-10-14

申请号：JP2009074926

申请日：2009-03-25

Applicant: Nuflare Technology Inc ,  Toshiba Corp ,  株式会社ニューフレアテクノロジー ,  株式会社東芝

Inventor： OGASAWARA MUNEHIRO ,  NISHIMURA CHIKASUKE ,  TAMAMUSHI SHUICHI

IPC: H01L21/027

Abstract: PROBLEM TO BE SOLVED: To improve the accuracy of lithography by suppressing the movement of a beam position on a sample surface due to blanking deflection.
SOLUTION: In the electron beam lithography apparatus, condenser lenses 21, 22 and a blanking deflector 31 are provided on an electron source 11 side of an aperture mask 41 closest to the electron source 11 and a projection lens 23 is provided on an downstream side nearer to a beam progressing axis direction than the aperture mask 41, and the blanking deflector 31 controls ON-OFF of electron beams. The blanking deflector 31 consists of at least two stages of electrostatic deflection electrodes 311, 312 arranged between the condenser lenses 21, 22 and the aperture mask 41, and the deflection electrodes 311, 312 are driven by allowing the deflection directions to be opposite so that the movement due to blanking of a cross-over image formed by the condenser lenses 21, 22 and the projection lens 23 can be reduced.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：通过抑制由于消隐偏转而在样品表面上的光束位置的移动来提高光刻的精度。 解决方案：在电子束光刻设备中，聚光透镜21,22和消隐偏转器31设置在最靠近电子源11的光阑41的电子源11侧上，投影透镜23设置在 下游侧比孔径掩模41更靠近光束前进轴方向，并且消隐偏转器31控制电子束的接通。 消隐偏转器31由设置在聚光透镜21,22和孔径掩模41之间的至少两级的静电偏转电极311,312组成，偏转电极311,312通过允许偏转方向相反来驱动，使得 可以减少由聚光透镜21,22和投影透镜23形成的交叉图像的消隐的移动。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2013055144A

公开(公告)日：2013-03-21

申请号：JP2011190957

申请日：2011-09-01

Applicant: Nuflare Technology Inc ,  株式会社ニューフレアテクノロジー

Inventor： YOSHIKAWA RYOICHI ,  OGASAWARA MUNEHIRO

IPC: H01L21/027 ,  G03F7/20 ,  H01J37/305

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31766 ,  H01L21/263 ,  H01L21/2633 ,  H01L21/3085

Abstract: PROBLEM TO BE SOLVED: To provide a drawing device which suppresses variation in pattern dimensions due to deviation of the irradiation position of a multi-beam caused by distortion of an optical system.SOLUTION: A drawing device 100 comprises an XY stage 105, an electron gun 201, an aperture member 203 having a plurality of holes through which the portions of an electron beam pass to form a multi-beam, blanking plates 204 performing the blanking deflection of corresponding beams, respectively, a deflector 208 which deflects respective beams to respective irradiation positions on a specimen, a drawing control unit 18 which controls a plurality of beams passed through holes, different from each other, to perform drawing at predetermined control grid intervals on the specimen, and an amount of irradiation control unit 16 which controls the amount of irradiation of a beam, involved in deviation, variably depending on the amount of deviation when the interval of drawing beams deviates from the control grid interval.

Abstract translation: 要解决的问题：提供一种绘制装置，其抑制由于光学系统的失真引起的多光束的照射位置的偏差而导致的图案尺寸的变化。 解决方案：绘图装置100包括XY台105，电子枪201，具有多个孔的孔径构件203，电子束的部分通过该孔穿过以形成多光束，消光板204执行 相应的光束的消隐偏转分别是将各个光束偏转到样本上的各个照射位置的偏转器208，控制通过彼此不同的孔的多个光束的绘图控制单元18，以在预定的控制栅格 样本上的间隔，以及照射控制单元16，其量当牵引波束的间隔偏离控制网格间隔时根据偏差量可变地控制涉及偏差的光束的照射量。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2010219444A

公开(公告)日：2010-09-30

申请号：JP2009067018

申请日：2009-03-18

Applicant: Nuflare Technology Inc ,  Toshiba Corp ,  株式会社ニューフレアテクノロジー ,  株式会社東芝

Inventor： NISHIMURA CHIKASUKE ,  OGASAWARA MUNEHIRO ,  TAMAMUSHI SHUICHI

IPC: H01L21/027 ,  H01J37/305

Abstract: PROBLEM TO BE SOLVED: To suppress a deflection error associated with blanking of a charged particle beam, and to improve drawing accuracy.
SOLUTION: This charged particle beam drawing device for drawing a desired pattern on a sample includes: a charged particle beam source 11 for generating a charged particle beam; a lens system 21, 22, 23 for focusing the charged particle beam 12 generated by the charged particle beam source 11 on a sample surface 14; a blanking deflector 41 for controlling the arrival of the beam on the sample surface 14; a blanking deflection control circuit 51 for supplying a blanking signal to the blanking deflector 41; and a blanking correction mechanism for correcting a deflection error associated with blanking deflection in response to at least one of the waveform, the frequency, the time ratio and the shot time of the blanking signal.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：抑制与带电粒子束的消隐相关的偏转误差，并提高拉拔精度。 解决方案：用于在样品上绘制所需图案的带电粒子束描绘装置包括：用于产生带电粒子束的带电粒子束源11; 用于将由带电粒子束源11产生的带电粒子束12聚焦在样品表面14上的透镜系统21,22,23; 用于控制光束到达样品表面14的消隐偏转器41; 用于将消隐信号提供给消隐偏转器41的消隐偏转控制电路51; 以及消隐校正机构，用于响应于消隐信号的波形，频率，时间比和拍摄时间中的至少一个来校正与消隐偏转相关的偏转误差。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2017117859A

公开(公告)日：2017-06-29

申请号：JP2015249309

申请日：2015-12-22

Applicant: 株式会社ニューフレアテクノロジー ,  Nuflare Technology Inc

Inventor： OGASAWARA MUNEHIRO

IPC: H01L21/027 ,  G03F7/20 ,  H01J37/305

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/10 ,  H01J37/141 ,  H01J37/145 ,  H01J37/153 ,  H01J37/226 ,  H01J2237/0435 ,  H01J2237/31774

Abstract: 【課題】マルチビームの歪曲収差を抑えると共に球面収差を補正することが可能なマルチ荷電粒子ビーム装置を提供する。【解決手段】本発明の一態様の描画装置100は、電子銃201と、マルチビームを形成する第1の成形アパーチャアレイ部材224と、第1の成形アパーチャアレイ部材を格子として利用した、凹レンズを構成する第1の格子レンズ222と、格子レンズに対して電子銃201側とは反対側に配置され、磁場の符号が逆で、かつ同じ大きさに励磁される、第1と第2の電磁レンズを有するダブレットレンズ212,214と、第1と第2の電磁レンズの間であってマルチビームの集束点位置に配置され、集束点から外れた荷電粒子の通過を制限する第1の制限アパーチャ部材216と、ダブレットレンズを通過したマルチビームの少なくとも一部のビーム群の照射を受ける試料を載置する、連続移動可能なステージ105と、を備えたことを特徴とする。【選択図】図1

公开(公告)号：JP2014127569A

公开(公告)日：2014-07-07

申请号：JP2012282716

申请日：2012-12-26

Applicant: Nuflare Technology Inc ,  株式会社ニューフレアテクノロジー

Inventor： HIGASHIYA TAKANAO ,  OGASAWARA MUNEHIRO

IPC: H01L21/027 ,  G03F7/20

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J2237/04922 ,  Y10S430/143

Abstract: PROBLEM TO BE SOLVED: To provide a drawing device in which working distance can be increased while keeping a reduction rate and suppression of aberration.SOLUTION: A drawing device 100 includes an XY stage 105 movable while mounting a sample, an electron gun 201 emitting an electron beam, an aperture member 203 having a plurality of apertures formed therein, receiving irradiation of a charged particle beam in an aperture formation region including the plurality of apertures entirely, and forming a multi-beam when a part of the charged particle beam passes through the plurality of apertures, respectively, a reduction optical system (205, 207) for reducing the multi-beam, and a doublet lens (212, 214) arranged in the subsequent stage of the reduction optical system, and having a magnification of 1 and reverse direction of magnetic flux.

Abstract translation: 要解决的问题：提供一种能够在保持减小率和抑制像差的同时增加工作距离的绘图装置。解决方案：绘图装置100包括可在安装样本的同时移动的XY台105，发射 电子束，其中形成有多个孔的孔径构件203在整个包括多个孔的孔形成区域中接收带电粒子束的照射，并且当带电粒子束的一部分通过时形成多束 多个孔分别用于减少多光束的还原光学系统（205,207）和布置在还原光学系统的后续阶段中的倍率透镜（212,214），并且具有放大倍数为1和 磁通反向。

公开(公告)号：JP2014112639A

公开(公告)日：2014-06-19

申请号：JP2013124435

申请日：2013-06-13

Applicant: Nuflare Technology Inc ,  株式会社ニューフレアテクノロジー

Inventor： MATSUMOTO YASUSHI ,  YOSHIKAWA RYOICHI ,  IIJIMA TOMOHIRO ,  OGASAWARA MUNEHIRO ,  INOUE HIDEO

IPC: H01L21/027 ,  G03F7/20 ,  H01J37/305

CPC classification number: H01J37/045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/0435 ,  H01J2237/31771 ,  H01J2237/31774

Abstract: PROBLEM TO BE SOLVED: To provide a lithography method capable of improving accuracy of exposure dose control while mitigating restriction of circuit installation space.SOLUTION: A multi-charge-particle beam lithography method of an embodiment comprises the steps of: converting exposure time of each of multi-beams composed of charged particle beams to a binary value having the predetermined number of digits, for each shot; and for each shot of each beam, dividing an exposure of the beam into exposures of the number of digits times obtained by combining respective digits having exposure time corresponding to definition of a value of each digit of the converted binary value in the case of using a decimal number, and sequentially exposing a sample to beams having exposure time respectively corresponding to the respective digits.

Abstract translation: 要解决的问题：提供能够提高曝光剂量控制精度的光刻方法，同时减轻电路安装空间的限制。一种实施方式的多电荷 - 粒子束光刻方法包括以下步骤：将每个 对于每个镜头，由带电粒子束组成的具有预定数量位数的二进制值的多光束; 并且对于每个波束的每个镜头，将波束的曝光除以通过组合具有与在转换后的二进制值的每个数字的值的定义相对应的曝光时间的各个数字而获得的位数乘数的曝光 十进制数，并且将样本顺次曝光到具有分别对应于各个数字的曝光时间的光束。

公开(公告)号：JP2013128031A

公开(公告)日：2013-06-27

申请号：JP2011276732

申请日：2011-12-19

Applicant: Nuflare Technology Inc ,  株式会社ニューフレアテクノロジー

Inventor： YOSHIKAWA RYOICHI ,  OGASAWARA MUNEHIRO

IPC: H01L21/027 ,  H01J37/305

Abstract: PROBLEM TO BE SOLVED: To provide a lithography apparatus capable of drawing with high accuracy even if beams are always turned on or improper beams whose irradiation amount cannot be controlled occur in lithography by a multiple beam method.SOLUTION: A multiple charged particle beam lithography apparatus of one aspect of the present invention includes: a detector for detecting improper beams in multiple beams passing through a plurality of apertures in an aperture member; a setting section for setting a partial area so as to include more apertures in residual apertures except apertures through which improper beams pass in the plurality of apertures in the aperture member; a movable shield member for shielding apertures outside the partial area in the plurality of apertures in the aperture member; and a lithography processing control section for controlling lithography processing so that patterns are drawn on a sample by using multiple beams formed by beams passing through apertures in the partial area without being shielded by the shield member.

Abstract translation: 要解决的问题：为了提供一种光刻设备，即使光束总是打开，也可以高精度地绘制，或者通过多光束法在光刻中不能控制照射量的不正确的光束。 解决方案：本发明的一个方面的多带电粒子束光刻设备包括：检测器，用于检测通过孔径构件中的多个孔的多束光束中的不正确光束; 设置部分，用于设置部分区域，以便在不同光束通过孔径构件中的多个孔中的孔之外包括除了孔之外的剩余孔中的更多孔; 用于屏蔽所述孔构件中的所述多个孔中的所述局部区域外的孔的可移动屏蔽构件; 以及光刻处理控制部分，用于控制光刻处理，使得通过使用由穿过部分区域中的孔的光束形成的多个光束而不被屏蔽部件屏蔽，从而在样本上绘制图案。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013093566A

公开(公告)日：2013-05-16

申请号：JP2012219474

申请日：2012-10-01

Applicant: Nuflare Technology Inc ,  株式会社ニューフレアテクノロジー

Inventor： OGASAWARA MUNEHIRO

IPC: H01L21/027 ,  G03F7/20 ,  H01J37/09 ,  H01J37/18 ,  H01J37/305

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J2237/0213 ,  H01J2237/0435 ,  H01J2237/045

Abstract: PROBLEM TO BE SOLVED: To provide an apparatus for suppressing a blanking deflector array from being charged and contamination from being grown by charged particles scattered by a multibeam forming aperture.SOLUTION: A drawing apparatus 100 comprises: an electron gun 201 for emitting charged particle beams; a multibeam forming aperture member 203 for forming a multibeam; a blanking plate 204 having a plurality of blankers disposed thereon each for performing blanking deflection on a corresponding beam of the multibeam; electromagnetic lenses 212, 214 disposed between the multibeam forming aperture member 203 and the blanking plate 204; a limiting aperture member 216 disposed at a multibeam convergent point position between the electromagnetic lenses 212, 214 for limiting charged particles to passing out of a convergent point; and a limiting aperture member 206 for shielding the beams deflected into beam-off state by the plurality of blankers.

Abstract translation: 要解决的问题：提供一种用于抑制消隐偏转器阵列被带电的装置和由多波束形成孔散射的带电粒子生长的污染物。 解决方案：绘图装置100包括：用于发射带电粒子束的电子枪201; 用于形成多光束的多光束成形孔部件203; 消隐板204具有多个设置在其上的阻挡件，用于对该多光束的相应光束进行消隐偏转; 设置在多光束形成孔径构件203和消隐板204之间的电磁透镜212,214; 设置在电磁透镜212,214之间的多光束会聚点位置处的限制孔径构件216，用于限制带电粒子通过会聚点; 以及限制孔径构件206，用于屏蔽由多个阻挡件偏转成束切断状态的梁。 版权所有（C）2013，JPO＆INPIT