公开(公告)号：JP2017118132A

公开(公告)日：2017-06-29

申请号：JP2017023752

申请日：2017-02-13

Applicant: Tdk株式会社 ,  Tdk Corp ,  Tdk株式会社

Inventor： SASAKI TOMOO ,  OIKAWA TORU ,  KOIKE YUTO ,  ISHIDA YOICHI

IPC: H01L29/82 ,  H01L43/10

Abstract: 【課題】半導体チャンネル層とトンネル層との間の格子定数、及びトンネル層と強磁性層との間の格子定数のずれによって生じる界面でのスピン散乱を抑制するスピン注入電極構造、およびスピン伝導素子を提供する。【解決手段】半導体チャンネル層に接する側のトンネル層の格子定数と、強磁性層に接する側のトンネル層の格子定数が異なり、半導体チャンネル層に接するトンネル層と強磁性層に接するトンネル層が、単一の結晶構造であるようにする。【選択図】図4

公开(公告)号：JP2017085178A

公开(公告)日：2017-05-18

申请号：JP2017023764

申请日：2017-02-13

Applicant: Tdk株式会社 ,  Tdk Corp ,  Tdk株式会社

Inventor： SASAKI TOMOO ,  OIKAWA TORU ,  KOIKE YUTO ,  ISHIDA YOICHI

IPC: H01L29/82 ,  H01L43/10

Abstract: 【課題】半導体チャンネル層とトンネル層、及びトンネル層と強磁性層との間の格子定数のずれによって生じる界面でのスピン散乱を抑制し、高出力を得るためのスピン注入電極構造、又はスピン伝導素子を提供する。【解決手段】半導体チャンネル層上にトンネル層と強磁性層を設け、半導体チャンネル層と接する第一トンネル層の格子定数と、強磁性層と接する第二トンネル層の格子定数が異なり、さらに、第一トンネル層と第二トンネル層は、それぞれ異なる結晶系である。【選択図】図4

公开(公告)号：JP2014107497A

公开(公告)日：2014-06-09

申请号：JP2012261252

申请日：2012-11-29

Applicant: Tdk Corp ,  Tdk株式会社

Inventor： SASAKI TOMOO ,  OIKAWA TORU ,  KOIKE YUTO ,  ISHIDA YOICHI

IPC: H01L29/82

Abstract: PROBLEM TO BE SOLVED: To provide a spin injection electrode structure achieving a high output, which inhibits spin scattering at a boundary surface caused by a shear of a lattice constant between a semiconductor channel layer and a tunnel layer, and a lattice constant between the tunnel layer and a ferromagnetic layer; or provide a spin conduction element.SOLUTION: A spin injection electrode structure comprises tunnel layers and a ferromagnetic layer which are arranged on a semiconductor channel layer, in which a lattice constant of a first tunnel layer in contact with the semiconductor channel layer and a lattice constant of a second tunnel layer in contact with the ferromagnetic layer are different from each other, and further, the first tunnel layer and the second tunnel layer have crystalline systems different from each other.

Abstract translation: 要解决的问题：提供一种实现高输出的自旋注入电极结构，其抑制由半导体沟道层和隧道层之间的晶格常数的剪切引起的边界面处的自旋散射以及隧道之间的晶格常数 层和铁磁层; 或提供自旋导电元件。解决方案：自旋注入电极结构包括布置在半导体沟道层上的隧道层和铁磁层，其中与半导体沟道层接触的第一隧道层的晶格常数和晶格 与铁磁层接触的第二隧道层的常数彼此不同，此外，第一隧道层和第二隧道层具有彼此不同的晶体系。

公开(公告)号：JP2014107496A

公开(公告)日：2014-06-09

申请号：JP2012261251

申请日：2012-11-29

Applicant: Tdk Corp ,  Tdk株式会社

Inventor： SASAKI TOMOO ,  OIKAWA TORU ,  KOIKE YUTO ,  ISHIDA YOICHI

IPC: H01L29/82

Abstract: PROBLEM TO BE SOLVED: To provide a spin injection electrode structure which inhibits spin scattering at a boundary surface cased by a shear of a lattice constant between a semiconductor channel layer and a tunnel layer, and a lattice constant between the tunnel layer and a ferromagnetic layer; and provide a spin conduction element.SOLUTION: In a spin injection electrode structure, a lattice constant of a tunnel layer on the side in contact with a semiconductor channel layer and a lattice constant of the tunnel layer on the side in contact with a ferromagnetic layer are different from each other and the tunnel layer in contact with the semiconductor channel layer and the tunnel layer in contact with the ferromagnetic layer have a single crystal structure.

Abstract translation: 要解决的问题：提供一种自旋注入电极结构，其抑制在通过半导体沟道层和隧道层之间的晶格常数的剪切而包围的边界面处的自旋散射，以及隧道层和铁磁层之间的晶格常数 ; 并提供自旋导电元件。解决方案：在自旋注入电极结构中，与半导体沟道层接触的一侧的隧道层的晶格常数和隧道层在与铁磁层接触的一侧的晶格常数 与半导体沟道层和与铁磁层接触的隧道层的隧道层彼此不同，具有单晶结构。

公开(公告)号：JP2006010397A

公开(公告)日：2006-01-12

申请号：JP2004185030

申请日：2004-06-23

Applicant: Tdk Corp ,  Tdk株式会社

Inventor： YANAGIUCHI KATSUAKI ,  OKAWA WAKAKO ,  ISHIDA YOICHI

IPC: G01N1/28 ,  G01N1/32 ,  G01N23/04 ,  G01N23/225 ,  H01J37/20

Abstract: PROBLEM TO BE SOLVED: To provide a method capable of preparing easily a sample suitable for analyzing the surface state of a thin film and the state of a plane parallel to the surface.
SOLUTION: After forming an etching groove 16 reaching a soluble film 12 so as to enclose an analysis object domain 10R by irradiating FIB 15A, 15B toward a laminated film 10Z, a bottom part 12B which is a part in contact with an intermediate pattern 13 is dissolved and removed by using acid solution capable of dissolving only the soluble film 12 among a wafer 11, the soluble film 12 and an intermediate film 13Z, to thereby form the sample 10 for analysis. The acquired sample 10 for analysis is taken out by grasping its side surfaces 10W. Hereby, the sample 10 for analysis suitable for analyzing the surface state and the state of a plane parallel to the surface by using a SEM or a TEM can be formed easily and highly accurately without fouling the surface of an analysis object film pattern 14.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供能够容易地制备适于分析薄膜的表面状态的样品和平行于表面的平面状态的方法。 解决方案：通过向层叠膜10Z照射FIB 15A，15B，形成到达可溶性膜12以便包围分析对象区域10R的蚀刻槽16时，与中间体接触的部分的底部12B 通过在晶片11，可溶性膜12和中间膜13Z中仅使用可溶解膜12的酸溶液溶解除去图案13，从而形成用于分析的样品10。 通过抓取其侧表面10W来取出所获取的用于分析的样品10。 因此，可以容易且高精度地形成适于分析表面状态的分析用样品10和通过使用SEM或TEM平行于表面的平面状态，而不会污染分析对象薄膜图案14的表面。 P>版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2003022504A

公开(公告)日：2003-01-24

申请号：JP2001204619

申请日：2001-07-05

Applicant: Tdk Corp ,  ティーディーケイ株式会社

Inventor： UEJIMA SATOSHI ,  ISHIDA YOICHI

IPC: G01R33/09 ,  G11B5/39 ,  H01L43/08 ,  H01L43/12

CPC classification number: G11B5/3967 ,  G11B5/3903 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49046

Abstract: PROBLEM TO BE SOLVED: To provide a magneto-resistive element having a novel constitution capable of expanding a design margin of an electrical circuit by suppressing the heat generation at the connection part between an electrode layer and a magneto-resistive film by reducing an electric resistance for connection and also by suppressing the increase of the electric resistance between reading elements. SOLUTION: On a base 1 constituted of AlTiC, etc., a base protecting layer 2, a lower shield layer 3 and a lower insulation layer 4 are formed in this order. The magneto-resistive film 5 is formed on the lower insulation layer 4, and magnetic bias layers 6 are formed so as to be brought into contact with both side surfaces of this magneto-resistive element film 5 in the direction parallel with the air bearing surface. Then, the electrode layers 9b are formed so as to be brought into contact with the rear side surface 5e of the magneto- resistive film 5 at the opposite side to the air bearing surface.

Abstract translation: 要解决的问题：提供一种具有能够通过降低电阻来抑制电极层和磁阻膜之间的连接部分处的发热而扩大电路设计裕度的新颖结构的磁阻元件 也可以抑制读取元件之间的电阻的增加。 解决方案：在由AlTiC等构成的基体1上，依次形成基底保护层2，下屏蔽层3和下绝缘层4。 磁阻薄膜5形成在下绝缘层4上，形成磁偏压层6，使其与空气轴承面平行的方向与该磁阻元件膜5的两侧面接触 。 然后，电极层9b形成为与空气轴承表面相对的一侧与磁阻膜5的后侧表面5e接触。

公开(公告)号：JP2003142422A

公开(公告)日：2003-05-16

申请号：JP2001336871

申请日：2001-11-01

Applicant: TDK CORP

Inventor： UEJIMA SATOSHI ,  ISHIDA YOICHI ,  TERUNUMA KOICHI

IPC: H01L21/28 ,  G11B5/31 ,  G11B5/39 ,  H01F41/30 ,  H01L21/302 ,  H01L21/3205 ,  H01L21/3213 ,  H01L43/12

Abstract: PROBLEM TO BE SOLVED: To form a patterned thin film which is provided with a groove of fine width and equipped with an end that faces the groove and is superior in adhesion to the other thin film. SOLUTION: A patterned thin film forming method comprises a first step of successively forming an etching stopper film 102 and a patterning film 103 on a base 101, second step of forming a first patterned film 104 on the patterning film 103, third step of forming a second film 105 on all the surfaces of the patterning film 103 and the first film 104, fourth step of separating the first film 104 so as to enable the second film 105 formed on the patterning film 103 to function as an etching mask, and fifth step of selectively etching the patterning film 103 using the etching mask through dry etching for the formation of a patterned thin film with a groove.