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    Manufacturing method of electron emitter structure, electron emitter structure manufactured by manufacturing method of electron emitter structure, field electron emission display device with electron emitter structure built in, and field electron emission backlight
    1.
    发明专利
    Manufacturing method of electron emitter structure, electron emitter structure manufactured by manufacturing method of electron emitter structure, field electron emission display device with electron emitter structure built in, and field electron emission backlight 审中-公开
    电子发射器结构的制造方法，电子发射器结构的制造方法制造的电子发射器结构，具有电子发射器结构的场电子发射显示装置和场电子发射背光

    公开(公告)号：JP2009059680A

    公开(公告)日：2009-03-19

    申请号：JP2008135025

    申请日：2008-05-23

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： OKITA HIROYUKI

    IPC: H01J9/02 ,  F21S2/00 ,  F21Y105/00 ,  G02F1/13357 ,  H01J1/304 ,  H01J31/12 ,  H01J63/06

    CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J31/127 ,  H01J63/02 ,  H01J2201/30476

    Abstract: PROBLEM TO BE SOLVED: To provide procedures for forming an electron emitter structure used for a manufacturing method of an electron emitter structure, an electron emitter structure manufactured by the method, a field electron emission display device with the electron emitter structure built in, and a field electron emission backlight field electron emission display device with the electron emitter structure built in, or for a field electron emission backlight with the electron emitter structure built in for an LCD display device.
    SOLUTION: The electron emitter structure is formed by depositing mask elements 20 on a thin A1 substrate 10, chemically etching the A1 substrate through gaps between the mask elements 20, and forming spikes 13 on the substrate. Then, the spikes 13 are covered by an electron emitter material 21. The spike 13 can be formed to have a desired ratio of pitch/height.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供用于形成用于电子发射体结构的制造方法的电子发射体结构的方法，通过该方法制造的电子发射体结构，内置电子发射体结构的场致电子发射显示装置 以及内置有电子发射体结构的场电子发射背景场电子发射显示装置，或者是内置用于LCD显示装置的电子发射体结构的场电子发射背光。 解决方案：通过在薄的Al衬底10上沉积掩模元件20，通过掩模元件20之间的间隙化学蚀刻Al衬底，并在衬底上形成尖峰13来形成电子发射体结构。 然后，尖峰13被电子发射体材料21覆盖。尖峰13可以形成为具有希望的节距/高度比。 版权所有（C）2009，JPO＆INPIT

    Electron beam source and method to produce electron beam source
    3.
    发明专利
    Electron beam source and method to produce electron beam source 有权
    电子束源和生产电子束源的方法

    公开(公告)号：JP2010086967A

    公开(公告)日：2010-04-15

    申请号：JP2009228377

    申请日：2009-09-30

    Applicant: Carl Zeiss Nts Gmbh ,  Nanotools Gmbh ,  カール・ツァイス・エヌティーエス・ゲーエムベーハーCarl Zeiss NTS GmbH ,  ナノツールズ ゲーエムベーハー

    Inventor： DREXEL VOLKER ,  MANTZ ULRICH ,  IRMER BERND ,  PENZKOFER CHRISTIAN

    IPC: H01J37/073 ,  H01J1/304 ,  H01J9/02

    CPC classification number: H01J37/065 ,  H01J1/3044 ,  H01J37/06 ,  H01J2201/30415 ,  H01J2201/30446 ,  H01J2201/30476 ,  H01J2237/06316 ,  H01J2237/06375 ,  H01J2237/065 ,  Y10T29/49888

    Abstract: PROBLEM TO BE SOLVED: To provide an electron beam source with easy mounting and with long useful life. SOLUTION: A beam electron source includes a base, chips which are fixed to the base, separately extended from the base, equipped with a core which is applied with a surface made of a first material and a coating layer made of a second material, and providing a surface of the chip with the second material, a first electric terminal electrically connected with the coating layer, an extraction electrode having a gap facing to the chip, and a second electric terminal electrically connected with the extraction electrode. The beam electron source satisfies at least one of the following conditions: the electric conductivity of the first material is lower than one of 10 5 s/m, 10 3 s/m, 10s/m, 10 -1 s/m, 10 -3 s/m, 10 -5 s/m, or 10 -7 s/m, the electric conductivity of the second material is higher than one of 10 -7 s/m, 10 -5 s/m, 10 -3 s/m, 10 -1 s/m, 10 2 s/m, 10 4 s/m, or 10 6 s/m, or the ratio of the electric conductivity between the second material and the first material is greater than one of 10:1, 100:1, 10 4 , 10 6 , or 10 8 . COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供电子束源，安装方便，使用寿命长。 解决方案：束电子源包括基座，芯片固定到与基座分开延伸的基部，配备有芯，其被施加有由第一材料制成的表面和由第二材料制成的涂层 并且提供具有第二材料的芯片的表面，与涂层电连接的第一电端子，具有面向芯片的间隙的引出电极和与引出电极电连接的第二电端子。 束电子源满足以下条件中的至少一个：第一材料的电导率低于10 5 / s / m，10 3 s / m ，10s / m，10 -1 s / m，10 -3 s / m， SP> -7 s / m，第二材料的电导率高于10 -7 s / m，10 -5 m，10 -3 s / m，10 -1 s / m，10 2 s / SP> s / m或10 6 / s / m，或者第二材料与第一材料之间的电导率之比大于10:1,100:1,10:1， SP> 4 ，10 6 或10 8 。 版权所有（C）2010，JPO＆INPIT

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