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    레이저 가공장치
    91.
    发明公开
    레이저 가공장치 有权
    激光束工作机

    公开(公告)号：KR1020110112283A

    公开(公告)日：2011-10-12

    申请号：KR1020117011529

    申请日：2009-12-04

    Applicant: 하마마츠 포토닉스 가부시키가이샤

    Inventor： 후쿠미츠겐시 ,  오이시신고 ,  아오시마신이치로

    IPC: B23K26/042 ,  B23K26/03 ,  B23K26/064 ,  B23K26/073

    CPC classification number: B23K26/0732 ,  B23K26/0617 ,  B23K26/073 ,  B23K26/0738 ,  B23K26/08

    Abstract: 실린드리칼 렌즈(4)는 레이저광(L1)을 Y축방향(즉, YZ평면 내)에서 발산시키고, X축방향(즉, ZX평면 내)에서 발산 및 수속시키지 않는다. 그리고, 대물렌즈(5)는 실린드리칼 렌즈(4)로부터 출사된 레이저광(L1)을 Y축방향에서 점 P1으로 수속시키고, X축방향에서 점 P2로 수속시킨다. 또한, 1쌍의 나이프 엣지(13)는 대물렌즈(5)에 입사하는 레이저광(L1)의 발산각 θ를 Y축방향에서 조절한다. 이것에 의해, 레이저광(L1)의 단면 형상은 점 P2에서 Y축방향으로 연장하는 길이가 긴 형상이 되어, Y축방향의 최대 길이가 조절된다. 이 때문에, 점 P2를 가공대상물(S)의 표면에 위치시킴으로써, Y축방향으로 소망한 길이로 연장하는 길이가 긴 형상의 가공영역을 가공대상물(S)의 표면에 형성할 수 있다.

    기판 밀봉에 사용되는 레이저 빔 조사 장치, 기판 밀봉 방법, 및 유기 발광 디스플레이 장치의 제조 방법
    92.
    发明公开
    기판 밀봉에 사용되는 레이저 빔 조사 장치, 기판 밀봉 방법, 및 유기 발광 디스플레이 장치의 제조 방법 有权
    用于基板密封的激光束辐射装置，基板密封方法和使用其的有机发光显示装置的制造方法

    公开(公告)号：KR1020110080884A

    公开(公告)日：2011-07-13

    申请号：KR1020100001312

    申请日：2010-01-07

    Applicant: 삼성모바일디스플레이주식회사

    Inventor： 이정민 ,  강태욱

    IPC: H01S3/10 ,  H01L51/56

    CPC classification number: B23K26/073 ,  H01L51/5246

    Abstract: PURPOSE: A laser beam irradiating device, a substrate sealing method, and a method for manufacturing an organic light emitting display device are provided to enhance the intensity and adhesion of the organic light emitting display device by improving temperature uniformity in the cross section direction of a frit. CONSTITUTION: A laser beam(160) moves while directly scanning along the sealing line of a sealing unit. The laser beam has constant beam intensity and a beam profile symmetrical to the central line of a laser beam. The laser beam is irradiated with a spot beam type. The length(D0) of the central line of the laser beam is shorter than the length(D1,D2) of the peripheral unit of the laser beam in parallel to the central line.

    Abstract translation: 目的：提供激光束照射装置，基板密封方法和制造有机发光显示装置的方法，以通过改善有机发光显示装置的横截面方向上的温度均匀性来提高有机发光显示装置的强度和附着力 料。 构成：激光束（160）沿着密封单元的密封线直接扫描移动。 激光束具有恒定的光束强度和与激光束的中心线对称的光束轮廓。 激光束用点波束型照射。 激光束的中心线的长度（D0）比平行于中心线的激光束的周边单元的长度（D1，D2）短。

    반도체 웨이퍼의 가공 방법
    94.
    发明公开
    반도체 웨이퍼의 가공 방법 有权
    装置的处理方法

    公开(公告)号：KR1020100126186A

    公开(公告)日：2010-12-01

    申请号：KR1020100032710

    申请日：2010-04-09

    Applicant: 가부시기가이샤 디스코

    Inventor： 모리카즈히로시 ,  다케다노보루 ,  마츠모토히로카즈

    IPC: H01L21/78 ,  H01L21/301

    CPC classification number: H01L21/67092 ,  B23K26/032 ,  B23K26/0622 ,  B23K26/0648 ,  B23K26/073 ,  B23K26/082 ,  B23K26/0853 ,  B23K26/0876 ,  B23K26/364 ,  B23K26/40 ,  B23K2201/40 ,  B23K2203/50 ,  H01L21/78

    Abstract: PURPOSE: A device processing method is provided to form the transverse strength of the device over 800 MPa by implementing the chamfering process on the periphery of the device by setting the peak energy density per 1 pulse at 5GW/cm^2~200 GW/cm^2. CONSTITUTION: A second slide block(16) is mounted on a first slide block(6) to be moving in Y axis direction. A chuck table(28) is mounted on the second slide block through a cylinder supporting member(26). A casing(35) accepting a laser beam radiation unit(34) is attached to a column(32). A photographing unit(38) detecting a processing area is arranged on the top of the casing.

    Abstract translation: 目的：提供一种器件加工方法，通过在5GW / cm ^ 2〜200GW / cm下设定每1脉冲的峰值能量密度，通过在器件周围实施倒角工艺，在800MPa以上形成器件的横向强度 ^ 2。 构成：第二滑块（16）安装在第一滑动块（6）上以在Y轴方向上移动。 卡盘台（28）通过气缸支撑构件（26）安装在第二滑块上。 接收激光束辐射单元（34）的壳体（35）附接到柱（32）。 检测处理区域的拍摄单元（38）布置在壳体的顶部。

    전도성 링크의 레이저 처리
    95.
    发明公开
    전도성 링크의 레이저 처리 无效
    导电链接的激光加工

    公开(公告)号：KR1020100017857A

    公开(公告)日：2010-02-16

    申请号：KR1020097026412

    申请日：2008-05-15

    Applicant: 노반타 코포레이션

    Inventor： 그리피스,조셉,제이. ,  이,주한 ,  구,보

    IPC: B23K26/36 ,  B23K26/0622 ,  H01L23/525 ,  B82Y20/00

    CPC classification number: B23K26/073 ,  B23K26/06 ,  B23K26/0624 ,  B23K26/36 ,  B23K26/40 ,  B23K2201/40 ,  B23K2203/12 ,  B23K2203/50 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of laser-based material processing comprising: generating a laser beam having a narrow emission spectrum characterized by a full width at half maximum intensity of less than about 1 nanometer during a first time interval; controllably modifying a characteristic of the laser beam during the time interval to produce one or more pulses without substantially broadening the emission spectrum; and delivering and focusing at least one of the one or more pulses onto at least one target structure during motion of the at least one structure relative to the at least one pulse.

    Abstract translation: 一种基于激光的材料处理方法，包括：在第一时间间隔期间产生具有特征在于具有小于约1纳米的半高强度全宽度的窄发射光谱的激光束; 在时间间隔内可控地修改激光束的特性以产生一个或多个脉冲而基本上不扩展发射光谱; 以及在所述至少一个结构相对于所述至少一个脉冲的运动期间，将所述一个或多个脉冲中的至少一个传递和聚焦到至少一个目标结构上。

    레이저 가공 방법 및 레이저 가공 장치
    96.
    发明公开
    레이저 가공 방법 및 레이저 가공 장치 有权
    激光加工方法和激光加工装置

    公开(公告)号：KR1020080050547A

    公开(公告)日：2008-06-09

    申请号：KR1020077025750

    申请日：2006-09-13

    Applicant: 하마마츠 포토닉스 가부시키가이샤

    Inventor： 오사지마테츠야 ,  스기우라류지 ,  아츠미가즈히로

    IPC: B23K26/38 ,  B23K26/062

    CPC classification number: B28D5/00 ,  B23K26/0057 ,  B23K26/066 ,  B23K26/073 ,  B23K26/40 ,  B23K2201/40 ,  B23K2203/50 ,  H01L21/78

    Abstract: A laser processing method in which the sectional shape at a focusing point P of a laser beam L is such that a maximum length in a direction perpendicular to a scheduled cutting line (5) is shorter than a maximum length in a direction parallel to the scheduled cutting line (5). Therefore, the shape of a modified region (7) formed inside a silicon wafer (11), when viewed from a laser beam L incident direction, is such that a maximum length in a direction perpendicular to a scheduled cutting line (5) is shorter than a maximum length in a direction parallel to the scheduled cutting line (5). When the modified region (7) having such a shape is formed inside an object (1) to be processed, twist hackle can be prevented from appearing on a cut section when the object (1) to be processed is cut with the modified region (7) as a cutting start point, whereby it is possible to improve the flatness of a cut section.

    Abstract translation: 一种激光加工方法，其中激光束L的聚焦点P处的截面形状使得垂直于预定切割线（5）的方向上的最大长度比平行于预定切割线（5）的方向上的最大长度短 切割线（5）。 因此，当从激光束L入射方向观察时，形成在硅晶片（11）内部的改质区域（7）的形状使得垂直于预定切割线（5）的方向的最大长度较短 而不是沿着与预定切割线（5）平行的方向上的最大长度。 当具有这种形状的改质区域（7）形成在待处理物体（1）的内部时，当被加工物体（1）被切割成改质区域时，可以防止在切割部分出现扭曲扭曲 7）作为切割起点，由此可以提高切割部分的平坦度。

    고주파 레이저를 사용하는 박막의 균일한 순차적 측면 고상화를 위한 시스템 및 방법
    97.
    发明公开
    고주파 레이저를 사용하는 박막의 균일한 순차적 측면 고상화를 위한 시스템 및 방법 失效
    使用高频激光对薄膜进行顺序顺序固化的系统和方法

    公开(公告)号：KR1020080045205A

    公开(公告)日：2008-05-22

    申请号：KR1020087006290

    申请日：2006-08-16

    Applicant: 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕

    Inventor： 임제임스에스

    IPC: H01L21/20

    CPC classification number: H01L27/1296 ,  B23K26/0622 ,  B23K26/073 ,  B23K26/0861 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285

    Abstract: Under one aspect, a method for processing a thin film includes generating a first set of shaped beamlets from a first laser beam pulse, each of the beamlets of the first set of beamlets having a length defining the y-direction, a width defining the x-direction, and a fluence that is sufficient to substantially melt a film throughout its thickness in an irradiated film region and further being spaced in the x-direction from adjacent beamlets of the first set of beamlets by gaps; irradiating a first region of the film with the first set of shaped beamlets to form a first set of molten zones which laterally crystallize upon cooling to form a first set of crystallized regions including crystal grains that are substantially parallel to the x-direction and having a length and width substantially the same as the length.and width of each of the shaped beamlets and being separated from adjacent crystallized regions by gaps substantially the same as the gaps separating the shaped beamlets; generating a second set of shaped beamlets from a second laser beam pulse, each beamlet of the second set of beamlets having a length, width, fluence, and spacing that is substantially the same as the length, width, fluence, and spacing of each beamlet of the first set of beamlets; and continuously scanning the film so as to irradiate a second region of the film with the second set of shaped beamlets to form a second set of molten zones that are displaced in the x-direction from the first set of crystallized regions, wherein at least one molten zone of the second set of molten zones partially overlaps at least one crystallized region of the first set of crystallized regions and crystallizes upon cooling to form elongations of crystals in said at least one crystallized region.

    Abstract translation: 在一个方面，一种用于处理薄膜的方法包括从第一激光束脉冲产生第一组成形的子束，第一组子束的每个子束具有限定y方向的长度，限定x的宽度 以及足以在照射的膜区域中充分熔化其整个厚度的膜的能量密度，并且还通过间隙在x方向上与第一组子束的相邻子束间隔开; 用第一组成形小梁照射薄膜的第一区域以形成第一组熔融区域，其在冷却时横向结晶以形成第一组结晶区域，其包括基本上平行于x方向的晶粒，并且具有 长度和宽度与每个成形子束的长度和宽度基本相同，并且通过与分离成形子束的间隙基本相同的间隙与相邻结晶区域分离; 从第二激光束脉冲产生第二组成形的子束，第二组子束的每个子束具有与每个子束的长度，宽度，注量和间距基本相同的长度，宽度，注量和间距 的第一组子束; 并且连续地扫描所述膜以便用所述第二组成形小射束照射所述膜的第二区域，以形成从所述第一组结晶区域沿x方向位移的第二组熔融区域，其中至少一个 第二组熔融区域的熔融区域部分地与第一组结晶区域的至少一个结晶区域重叠，并且在冷却时结晶，以在所述至少一个结晶区域中形成晶体的伸长率。

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