利索-全球专利检索

  1. Login
  2. Sign Up

Search Results

410 records (took 0.029 seconds)

    플라즈마 반응기용 마이크로파 동력 전달 시스템
    91.
    发明公开
    플라즈마 반응기용 마이크로파 동력 전달 시스템 有权
    用于等离子体反应器的微波功率输送系统

    公开(公告)号：KR1020130114203A

    公开(公告)日：2013-10-16

    申请号：KR1020137018593

    申请日：2011-12-14

    Applicant: 엘리멘트 식스 리미티드

    Inventor： 워트크리스토퍼존하워드 ,  브랜든존로버트

    IPC: C23C16/27 ,  C23C16/511 ,  H01J37/32 ,  H01P5/04

    CPC classification number: H01J37/32229 ,  C23C16/274 ,  C23C16/511 ,  C23C16/54 ,  H01J37/32192 ,  H01J37/32256 ,  H01J37/32266 ,  H01J2237/3321 ,  H01P5/20 ,  H01P5/222

    Abstract: (EN): A microwave power delivery system for supplying microwave power to a plurality of microwave plasma reactors (8), the microwave power delivery system comprising: a tuner (14) configured to be coupled to a microwave source (4) and configured to match impedance of the plurality of microwave plasma reactors to that of the microwave source; and a waveguide junction (18) coupled to the tuner and configured to guide microwaves to and from the plurality of microwave plasma reactors, wherein the waveguide junction comprises four waveguide ports including a first port coupled to the tuner, second and third ports configured to be coupled to respective microwave plasma reactors, and a fourth port coupled to a microwave sink (20), wherein the waveguide junction is configured to evenly split microwave power input from the tuner through the first port between the second and third ports for providing microwave power to respective microwave plasma reactors, wherein the waveguide junction is configured to decouple the second and third ports thereby preventing any reflected microwaves from one of the microwave plasma reactors from feeding across the waveguide junction directly into another microwave plasma reactor causing an imbalance, wherein the waveguide junction is further configured to feed reflected microwaves received back through the second and third ports which are balanced in terms of magnitude and phase to the tuner such that they can be reflected by the tuner and re-used, and wherein the waveguide junction is further configured to feed excess reflected power which is not balanced through the fourth port into the microwave sink.

    합성 다이아몬드 물질을 제조하기 위한 극초단파 플라즈마 반응기
    92.
    发明公开
    합성 다이아몬드 물질을 제조하기 위한 극초단파 플라즈마 반응기 有权
    합성다이아몬드물질을제하하기위한극초단파플라즈마반응기

    公开(公告)号：KR1020130113503A

    公开(公告)日：2013-10-15

    申请号：KR1020137018637

    申请日：2011-12-14

    Applicant: 엘리멘트 식스 리미티드

    Inventor： 코스티븐에드워드 ,  윌맨조나단제임스 ,  트위첸다니엘제임스 ,  스카스브룩지오프리앨런 ,  브랜든존로버트 ,  워트크리스토퍼존하워드

    IPC: H01J37/32 ,  C30B29/04

    CPC classification number: C23C16/45563 ,  C23C16/274 ,  C23C16/45504 ,  C23C16/45565 ,  C23C16/511 ,  C30B25/105 ,  C30B29/04 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/3244 ,  H01J37/32449

    Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition comprises a plasma chamber 102, a substrate holder 104 disposed in the plasma chamber for supporting a substrate 105, a microwave coupling configuration 110 for feeding microwaves from a microwave generator 106 into the plasma chamber, and a gas flow system 112, 122 for feeding process gases into the plasma chamber and removing them therefrom. The gas flow system comprises a gas inlet nozzle array 120 for directing process gases towards the substrate holder, the array being disposed opposite the substrate holder and comprising at least six gas inlet nozzles disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber. The gas inlet nozzle array has a gas inlet nozzle number density equal to or greater than 0.1 nozzles per cm2 and a nozzle area ratio, defined as the ratio of the area associated with each nozzle and an actual area of each nozzle, of equal to or greater than 10. The nozzle array preferably forms a hexagonal close-packed arrangement (figure 2). Also disclosed is a method of manufacturing synthetic diamond material using the reactor of the invention.

    Abstract translation: 用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器包括等离子体室102，设置在等离子体室中用于支撑衬底105的衬底保持器104，用于将微波从微波发生器106馈送到等离子体中的微波耦合配置110 以及气体流动系统112,122，用于将处理气体馈送到等离子体腔室中并从中除去它们。 该气流系统包括气体入口喷嘴阵列120，该气体入口喷嘴阵列120用于引导处理气体朝向衬底保持器，该阵列与衬底保持器相对设置并且包括至少六个气体入口喷嘴，该至少六个气体入口喷嘴设置成相对于衬底保持器的中心轴线 等离子室。 气体入口喷嘴阵列具有等于或大于0.1个喷嘴/ cm 2的气体入口喷嘴数量密度和定义为与每个喷嘴相关联的面积与每个喷嘴的实际面积之比等于或等于 大于10.喷嘴阵列优选地形成六方密排结构（图2）。 还公开了使用本发明的反应器制造合成金刚石材料的方法。

    합성 다이아몬드 물질을 제조하기 위한 마이크로파 플라즈마 반응기
    93.
    发明公开
    합성 다이아몬드 물질을 제조하기 위한 마이크로파 플라즈마 반응기 有权
    用于制造合成金刚石材料的微波等离子体反应器

    公开(公告)号：KR1020130102637A

    公开(公告)日：2013-09-17

    申请号：KR1020137018597

    申请日：2011-12-14

    Applicant: 엘리멘트 식스 리미티드

    Inventor： 컬렌알렉산더램 ,  더슨조셉마이클 ,  윌리엄스스테픈데이빗 ,  브랜든존로버트

    IPC: H01J37/32 ,  C23C16/27 ,  C23C16/511

    CPC classification number: H01J37/32238 ,  C23C16/274 ,  C23C16/511 ,  H01J37/32009 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/32229 ,  H01J37/32266 ,  H01J37/3244 ,  H01J2237/3321

    Abstract: A microwave plasma reactor for manufacturing a synthetic diamond material via chemical vapour deposition comprises a plasma chamber 2, a substrate holder 4 disposed in the chamber, a gas flow system 13, 16 for feeding process gases into the chamber and removing them therefrom, and a microwave coupling configuration 12 for feeding microwaves from a microwave generator 8 into the chamber, the coupling configuration comprising an annular dielectric window 18 formed in one or several sections, a coaxial waveguide 14 having a central inner conductor 20 and an outer conductor 22, and a waveguide plate 24 comprising a plurality of apertures (28, figures 2-4) disposed in an annular configuration with a plurality of arms extending between the apertures, each aperture forming a waveguide for coupling microwaves towards the plasma chamber. The waveguide plate preferably comprises an odd number of apertures, more preferably a prime number, and most preferably 3, 5 or 7. Channels 26 for supplying coolant or process gas may be defined in the plurality of arms. The inner conductor may be a floating conductor supported by a central portion of the waveguide plate. Also disclosed is a method of manufacturing synthetic diamond material using the apparatus of the invention.

    층간 절연층 형성 방법 및 반도체 장치
    95.
    发明公开
    층간 절연층 형성 방법 및 반도체 장치 无效
    层间绝缘层形成方法和半导体器件

    公开(公告)号：KR1020130041120A

    公开(公告)日：2013-04-24

    申请号：KR1020137001515

    申请日：2011-07-20

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 미야타니코타로 ,  네모토타케나오 ,  구로토리타쿠야 ,  고바야시야스오 ,  노자와토시히사

    IPC: H01L21/318 ,  H01L21/31 ,  C23C16/455

    CPC classification number: H01L21/02274 ,  C23C16/342 ,  C23C16/511 ,  H01L21/02112 ,  H01L21/76801

    Abstract: 기계적 강도 및 내흡습성이 우수한 저(低)유전율의 층간 절연층을 형성할 수 있는 층간 절연층 형성 방법을 제공한다. 또한, 배선 지연을 저감시킨 반도체 장치를 제공한다. 반도체 장치의 층간 절연층을 플라즈마 CVD법으로 형성하는 방법에 있어서, 감압된 처리 용기 내로 기판을 반입하는 공정과, 상기 기판으로부터 이격된 제1 공간(1a)에 플라즈마 생성 가스를 공급하는 공정과, 상기 제1 공간(1a)에서 상기 플라즈마 생성 가스를 여기하는 공정과, 상기 제1 공간(1a)과 상기 기판과의 사이의 제2 공간(1b)에, 적어도 수소기 또는 탄화수소기를 포함하는 보론 화합물을 포함하는 원료 가스를 공급하는 공정을 갖는다. 또한, 붕소, 탄소 및 질소를 포함하는 어모퍼스 구조가 형성된 층간 절연층을 통하여 다층 배선된 반도체 장치에 있어서, 상기 층간 절연층에, 육방정 및 입방정(立方晶)의 질화 붕소를 포함하는 어모퍼스 구조 중에 탄화수소기 또는 알킬아미노기를 혼재시킨다.

Patent Agency Ranking