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公开(公告)号：KR1020150072345A
公开(公告)日：2015-06-29
申请号：KR1020140180295
申请日：2014-12-15
Applicant: 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Inventor： 야마자키순페이 , 시모무라아키히사 , 사토유헤이 , 야마네야수마사 , 야마모토요시타카 , 수자와히데오미 , 타나카테츠히로 , 오카자키유타카 , 오쿠노나오키 , 이시야마다카히사
IPC: H01L29/786
CPC classification number: H01L29/7869 , H01L29/41733 , H01L29/78606 , H01L29/78696
Abstract: 본발명은도통시의전류값이큰 트랜지스터를제공한다. 과잉산소를포함하는제 1 절연체와, 제 1 절연체위의제 1 산화물반도체와, 제 1 산화물반도체위의제 2 산화물반도체와, 제 2 산화물반도체위에서간격을두고배치된제 1 도전체및 제 2 도전체와, 제 1 산화물반도체의측면, 제 2 산화물반도체의상면및 측면, 제 1 도전체의상면, 및제 2 도전체의상면에접촉하는제 3 산화물반도체와, 제 3 산화물반도체위의제 2 절연체와, 제 2 절연체및 제 3 산화물반도체를개재하여제 2 산화물반도체의상면및 측면과대향하는제 3 도전체를갖고, 제 1 산화물반도체는제 3 산화물반도체보다산소투과성이높은반도체장치이다.
Abstract translation: 在本发明中提供了一种在馈电过程中具有高电流的晶体管。 半导体器件包括包含过量氢的第一绝缘体; 位于第一绝缘体上的第一氧化物半导体; 位于第一氧化物半导体上的第二氧化物半导体; 在所述第二氧化物半导体上布置成一定距离的第一导体和第二导体; 与第一氧化物半导体的侧面接触的第三氧化物半导体，第二氧化物半导体的上表面和侧面，第一导体的上表面和第二导体的上表面; 位于所述第三氧化物半导体上的第二绝缘体; 以及第三导体，插入所述第二绝缘体和所述第三导体，所述第二绝缘体和所述第三导体插入所述第二绝缘体和所述第三氧化物半导体，并且面向所述第二氧化物半导体的上表面和侧表面，其中所述第一氧化物半导体具有比所述第三氧化物 半导体。
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Patent Agency Ranking
公开(公告)号：KR101641499B1
公开(公告)日：2016-07-21
申请号：KR1020090091576
申请日：2009-09-28
Applicant: 가부시키가이샤 한도오따이 에네루기 켄큐쇼
IPC: H01L21/20
CPC classification number: H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L27/1222 , H01L29/66772
Abstract: 레이저광을조사하는경우에있어서, 충분한특성의 SOI 기판을얻는것을목적의하나로한다. 또는, 레이저광의조사조건에기인하는 SOI 기판의특성의변동을저감하는것을목적의하나로한다. 단결정반도체기판에가속된이온을조사하여, 단결정반도체기판에취화영역을형성하고, 절연층을사이에두고단결정반도체기판과베이스기판을접합시켜취화영역에서단결정반도체기판을분리하여, 베이스기판위에반도체층을형성하고, 열처리를실시함으로써반도체층중의결함을저감시킨후, 반도체층에레이저광을조사한다.
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公开(公告)号：KR1020100123619A
公开(公告)日：2010-11-24
申请号：KR1020100044287
申请日：2010-05-12
Applicant: 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Inventor： 오쿠노나오키
IPC: H01L27/12
CPC classification number: H01L21/76254
Abstract: PURPOSE: An SOI substrate and a manufacturing method thereof are provided to suppress surface roughness of a semiconductor by forming a no-junction area on the edge of an interface. CONSTITUTION: An accelerated ion projected on a bond substrate to form an embrittlement region on the bond substrate. An insulating layer(114) is formed on the bond layer and a base layer(100). The bond substrate and the base substrate are bonded between the insulating layers. A no-bonding area is formed on a part of the bond substrate and the base substrate.
Abstract translation: 目的：提供SOI衬底及其制造方法，以通过在界面的边缘上形成无结区域来抑制半导体的表面粗糙度。 构成：在键合衬底上投射的加速离子以在键合衬底上形成脆化区域。 绝缘层（114）形成在接合层和基底层（100）上。 接合基板和基底基板接合在绝缘层之间。 在接合基板和基底基板的一部分上形成无接合区域。
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公开(公告)号：KR1020100036196A
公开(公告)日：2010-04-07
申请号：KR1020090091576
申请日：2009-09-28
Applicant: 가부시키가이샤 한도오따이 에네루기 켄큐쇼
IPC: H01L21/20
CPC classification number: H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L27/1222 , H01L29/66772
Abstract: PURPOSE: A manufacturing method of a SOI(Silicon On Insulator) substrate is provided to improved crystalline by fusing a single crystal semiconductor layer by irradiating a laser light to a single crystal semiconductor film. CONSTITUTION: An accelerated ion is irradiated to the single crystalline semiconductor substrate, so that an embrittling region(112) is formed on a single crystalline semiconductor substrate(110). An insulating layer(114) is left in interval and the single crystalline semiconductor substrate and a base substrate(100) are welded together. The single crystalline semiconductor substrate separates from the embrittled area, so that a single crystal semiconductor film(116) is formed on the base substrate. An annealing is implemented in a temperature over 700°C so that the defect of the single crystal semiconductor film be reduced. The laser light is irradiated to the single crystal semiconductor film.
Abstract translation: 目的：通过将激光照射到单晶半导体膜，通过将单晶半导体层熔合而提供SOI（绝缘体上硅）衬底的制造方法来改善晶体。 构成：将加速离子照射到单晶半导体衬底，使得在单晶半导体衬底（110）上形成脆化区（112）。 绝缘层（114）留在间隔中，单晶半导体衬底和基底衬底（100）焊接在一起。 单晶半导体衬底与脆化区域分离，从而在基底衬底上形成单晶半导体膜（116）。 在超过700℃的温度下进行退火，从而降低单晶半导体膜的缺陷。 激光照射到单晶半导体膜。
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公开(公告)号：KR101562522B1
公开(公告)日：2015-10-22
申请号：KR1020100044287
申请日：2010-05-12
Applicant: 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Inventor： 오쿠노나오키
IPC: H01L27/12
CPC classification number: H01L21/76254
Abstract: 유리기판과단결정반도체기판을접합하여 SOI 기판을제작할때의실리콘층의표면거칠기를억제하는것을목적의하나로한다. 또는, 상기표면거칠기를억제하여수율이높은반도체장치를제공하는것을목적의하나로한다. 본드기판에가속된이온을조사하여상기본드기판에취화영역을형성하고, 본드기판또는베이스기판의표면에절연층을형성하고, 절연층을사이에두고본드기판과베이스기판을접합하는것과함께, 본드기판과베이스기판의일부에접합하지않는영역을형성하고열 처리를행함으로써, 취화영역에있어서본드기판을분리하여베이스기판위에반도체층을형성한다.
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公开(公告)号：KR1020110000519A
公开(公告)日：2011-01-03
申请号：KR1020100060192
申请日：2010-06-24
Applicant: 가부시키가이샤 한도오따이 에네루기 켄큐쇼
IPC: H01L21/20 , H01L21/786
CPC classification number: H01L21/76254 , H01L21/02686 , H01L21/84
Abstract: PURPOSE: An SOI substrate and a method for manufacturing the same are provided to suppress the roughness of surface of a single crystal semiconductor film by forming a closed region having a gas in a part of the surface of a substrate. CONSTITUTION: A brominated area(112) is formed on a single crystalline semiconductor substrate(110) by radiating accelerated ion on the single crystalline semiconductor substrate. An insulating layer(114) is formed on one side of the semiconductor substrate surface and a base substrate. The single crystalline semiconductor substrate and the base substrate are combined with each other. A concave part(140) is formed in an area corresponding to the peripheral part of the single crystalline semiconductor substrate of the insulating layer surface. The single crystalline semiconductor substrate is separated from the base substrate through a thermal process.
Abstract translation: 目的：提供SOI衬底及其制造方法，以通过在衬底的表面的一部分中形成具有气体的封闭区域来抑制单晶半导体膜的表面粗糙度。 构成：通过在单晶半导体衬底上辐射加速离子，在单晶半导体衬底（110）上形成溴化区域（112）。 绝缘层（114）形成在半导体衬底表面的一侧和基底衬底上。 单晶半导体衬底和基底衬底相互结合。 在对应于绝缘层表面的单晶半导体衬底的周边部分的区域中形成凹部（140）。 通过热处理将单晶半导体衬底与基底衬底分离。
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