-
公开(公告)号：KR1020110047130A
公开(公告)日：2011-05-06
申请号：KR1020100098368
申请日：2010-10-08
Applicant: 동우 화인켐 주식회사 , 삼성디스플레이 주식회사
IPC: C09K13/08 , C23F1/20 , C23F1/30 , H01L21/306
CPC classification number: C23F1/16 , C09K13/08 , C23F1/20 , C23F1/30 , H01L21/30604
Abstract: PURPOSE: An etchant composition is provided to ensure excellent etching property to an indium-based metal layer, aluminum-lanthanum-based alloy film, and titanium-based metal film, and excellent etching profile, and to prevent underlayer damage and residue generation. CONSTITUTION: An etchant composition of a trilayer consisting of an indium-based metal layer, aluminum-lanthanum-based alloy film, and titanium-based metal film includes, based on the total weight of the composition, 1-15 weight% of hydrogen peroxide, 0.1-10 weight% of inorganic acid, 1-15 weight% of hydrogen peroxide, 0.1-10 weight% of fluorine-containing compound, and the remaining amount of water.
Abstract translation: 目的：提供蚀刻剂组合物以确保对铟基金属层，铝 - 镧基合金膜和钛基金属膜的优异的蚀刻性能，优异的蚀刻轮廓，并且防止底层损伤和残留物产生。 构成：由铟基金属层，铝 - 镧基合金膜和钛基金属膜构成的三层的蚀刻剂组成基于组合物的总重量，包括1-15重量％的过氧化氢 ，无机酸0.1-10重量％，过氧化氢1-15重量％，含氟化合物0.1-10重量％，剩余量的水。
-
公开(公告)号：KR1020110049671A
公开(公告)日：2011-05-12
申请号：KR1020100097748
申请日：2010-10-07
Applicant: 동우 화인켐 주식회사 , 삼성디스플레이 주식회사
IPC: C09K13/08 , C23F1/20 , C23F1/30 , H01L21/306
CPC classification number: C09K13/08 , C23F1/20 , C23F1/30 , H01L21/30604
Abstract: PURPOSE: An etchant composition is provided to simplify an etching process and to improve productivity by simultaneously etching a triplet film. CONSTITUTION: An etchant composition for etching a triple film is constituted by an indium-based metal film, an aluminum-based metal film, and a titanium-based or molybdenum-based metal film, wherein the etchant composition comprises: 0.1 wt % to 10 wt % of a ferrous compound; 0.1 wt % to 10 wt % of nitric acid; 0.01 wt % to 5 wt % of a fluorine compound; with the remainder being water, and further comprises 0.1 wt % to 5 wt % of a phosphate compound.
Abstract translation: 目的：提供蚀刻剂组合物以简化蚀刻工艺并通过同时蚀刻三重态膜来提高生产率。 构成：用于蚀刻三层膜的蚀刻剂组合物由铟基金属膜，铝基金属膜和钛基或钼基金属膜构成，其中蚀刻剂组合物包含：0.1重量％至10重量％ 重量％的亚铁化合物; 0.1重量％至10重量％的硝酸; 0.01重量％〜5重量％的氟化合物; 剩余部分为水，还含有0.1重量％〜5重量％的磷酸酯化合物。
-
公开(公告)号：KR101804573B1
公开(公告)日：2017-12-06
申请号：KR1020100098368
申请日：2010-10-08
Applicant: 동우 화인켐 주식회사 , 삼성디스플레이 주식회사
IPC: C09K13/08 , C23F1/20 , C23F1/30 , H01L21/306
Abstract: 본발명은과산화수소 1 내지 15 중량%; 무기산 0.1 내지 10 중량%; 함불소화합물 0.01 내지 5 중량%; 및물 잔량을포함하는인듐계금속막, 알루미늄-란타늄계합금막및 티타늄계금속막으로이루어진삼중막의식각액조성물에관한것이다.
Abstract translation: 本发明涉及包含1至15重量％的过氧化氢的组合物; 0.1至10重量％的无机酸; 0.01至5重量％的氟化合物; 铝镧合金膜和钛系金属膜。
-
公开(公告)号：KR101804572B1
公开(公告)日：2017-12-05
申请号：KR1020100097748
申请日：2010-10-07
Applicant: 동우 화인켐 주식회사 , 삼성디스플레이 주식회사
IPC: C09K13/08 , C23F1/20 , C23F1/30 , H01L21/306
Abstract: 본발명은철 화합물 0.1 중량% 내지 10 중량%; 질산 0.1 중량% 내지 10 중량%; 함불소화합물 0.01 중량% 내지 5 중량%; 및잔량의물을포함하고, 인산염화합물 0.1 중량% 내지 5 중량%를추가로포함하는인듐계금속막, 알루미늄계금속막, 및티타늄계또는몰리브덴계금속막으로이루어진삼중막의식각액조성물에관한것이다.
Abstract translation: 本发明涉及铁化合物0.1-10重量％ 0.1至10重量％的硝酸; 0.01重量％至5重量％的氟化合物; 并且还含有一定量的残留水，并且还包含0.1重量％至5重量％的磷酸盐化合物，铝基金属膜以及钛基或钼基金属膜。
-
公开(公告)号：KR1020110087582A
公开(公告)日：2011-08-03
申请号：KR1020100007068
申请日：2010-01-26
Applicant: 삼성디스플레이 주식회사 , 동우 화인켐 주식회사
IPC: C09K13/04
CPC classification number: H01L29/401 , C09K13/06 , H01L27/124 , H01L31/022475 , H01L31/022483 , H01L31/1884 , Y02E10/50
Abstract: PURPOSE: An etchant composition is provided to avoid the residue generation after an etching process while not damaging a photoresist in an etching process and to improve productivity in the manufacture of an electronic component substrate such as a flat panel display. CONSTITUTION: An etchant composition for a transparent electrode layer comprises inorganic acids, compound including ammonium(NH4+), cyclic amine compound, and remaining amount of water. The etchant composition further includes at least one selected from surfactants, metal ion scavenger and corrosion inhibitor. A method for etching the transparent electrode layer comprises the steps of: forming a transparent electrode layer on a substrate; forming a photoresist pattern on the transparent electrode layer; and etching the transparent electrode layer using the etchant.
Abstract translation: 目的：提供蚀刻剂组合物以避免在蚀刻工艺之后残留物产生，同时在蚀刻工艺中不损坏光致抗蚀剂并提高电子元件基板如平板显示器的制造中的生产率。 构成：用于透明电极层的蚀刻剂组合物包括无机酸，包括铵（NH 4 +），环胺化合物和剩余量的水的化合物。 蚀刻剂组合物还包括选自表面活性剂，金属离子清除剂和缓蚀剂中的至少一种。 蚀刻透明电极层的方法包括以下步骤：在基板上形成透明电极层; 在所述透明电极层上形成光致抗蚀剂图案; 并使用蚀刻剂蚀刻透明电极层。
-
Patent Agency Ranking
-
公开(公告)号：KR101880306B1
公开(公告)日：2018-07-20
申请号：KR1020110137196
申请日：2011-12-19
Applicant: 동우 화인켐 주식회사
Abstract: 본발명은전자재료용세정액조성물에관한것으로, 구체적으로실세스퀴옥산, 유기산, 유기아민및 부식방지제를포함하여, 유리기판또는금속막질표면에존재하는유기오염물및 파티클의제거력이우수하고, 기판상에형성되어있는알루미늄, 구리등의금속배선에대한부식방지효과가우수한전자재료용세정액조성물에관한것이다.
-
公开(公告)号：KR101426564B1
公开(公告)日：2014-08-06
申请号：KR1020080013903
申请日：2008-02-15
Applicant: 동우 화인켐 주식회사
Abstract: 본 발명은 a) 기판 상에 게이트 전극을 형성하는 단계; b) 상기 게이트 전극을 포함한 기판 상에 게이트 절연층을 형성하는 단계; c) 상기 게이트 절연층 상에 반도체층을 형성하는 단계; d) 상기 반도체층 상에 소스 및 드레인 전극을 형성하는 단계; 및 e) 상기 드레인 전극에 연결된 화소전극을 형성하는 단계를 포함하는 액정표시장치용 어레이 기판의 제조방법에 있어서, 상기 a) 단계, 및 d)단계에서는 기판 상에 몰리브덴계 금속/알루미늄계 금속 이중막을 형성한 후, 식각액 조성물로 식각하여 게이트 전극, 소스 전극 및 드레인 전극을 형성하고, 상기 e) 단계에서는 인듐산화막을 형성한 후, 상기 식각액 조성물로 식각하여 화소전극을 형성하며, 상기 식각액 조성물은, 조성물 총 중량에 대하여, A) 질산화철(Fe(NO
3 )
3 ) 2 내지 5 중량%; B) 함불소화합물 0.1 내지 1 중량%; C) 질산(HNO
3 ) 8 내지 15 중량%; D) 과염소산(HClO
4 ) 2 내지 5 중량%; E) CuCl
2 및 CuSO
4 중에서 선택되는 1종 또는 2종의 구리염 화합물 0.1 내지 5 중량%; 및 F) 물 잔량을 포함하는 것을 특징으로 하는 액정표시장치용 어레이 기판의 제조방법에 관한 것이다.
몰리브덴, 알루미늄, 인듐산화막, 식각액 조성물Abstract translation: A）在衬底上形成栅电极; b）在包括栅电极的衬底上形成栅极绝缘层; c）在栅绝缘层上形成半导体层; d）在半导体层上形成源电极和漏电极; 和e）形成连接到漏电极的像素电极，其中在步骤a）和d）中，钼金属/铝金属双层 通过用蚀刻剂组合物蚀刻形成栅电极，源电极和漏电极;在步骤（e）中形成氧化铟膜并蚀刻蚀刻剂组合物以形成像素电极; 基于组合物的总重量，A）氧化铁（Fe（NO
-
公开(公告)号：KR1020130128952A
公开(公告)日：2013-11-27
申请号：KR1020120053186
申请日：2012-05-18
Applicant: 동우 화인켐 주식회사
IPC: G03F7/42 , H01L21/027
CPC classification number: G03F7/422 , G03F7/425 , H01L21/0273
Abstract: The invention relates to a resist stripper composition for a flat panel display comprising: an organic phosphoric acid type represented by a chemical formula 1; an alkali based compound; a water-soluble polar solvent; and deionized water (R1 is alkyl, an alkenyl group or a hydroxy alkyl group having a carbon number of more than 3 in the above formula). And the invention relates to a manufacturing method for a flat panel display substrate including the process of washing the flat panel display substrate by using the display resist stripper composition.
Abstract translation: 本发明涉及一种用于平板显示器的抗蚀剂剥离组合物，包括：由化学式1表示的有机磷酸型; 碱类化合物; 水溶性极性溶剂; 和上述式中的去离子水（R1是烷基，烯基或碳数大于3的羟基烷基）。 本发明涉及一种平板显示基板的制造方法，其包括使用显示抗蚀剂剥离剂组合物洗涤平板显示基板的方法。
-
公开(公告)号：KR1020090081544A
公开(公告)日：2009-07-29
申请号：KR1020080007470
申请日：2008-01-24
Applicant: 동우 화인켐 주식회사
IPC: H01L29/786 , H01L21/3063
CPC classification number: H01L29/66757 , C23F1/18 , H01L21/3063 , H01L29/458 , H01L29/4908
Abstract: A method for fabricating a thin film transistor and an etching solution composition used for the same are provided to prevent the generation of an etching residue, thereby reducing a risk of electric short or wiring fault. A thin film transistor comprises a semiconductor layer(110), a gate insulating layer(115), a gate electrode(120), an interlayer insulating film(125) and a source/drain electrode(130). The gate electrode comprises copper or a copper alloy film. The source/drain electrode comprises copper or the copper alloy film. The gate electrode and the source/drain electrode are formed by an etching solution of the copper or the copper alloy film. The etching solution composition is composed of 1-20wt% of inorganic salt oxidizer, 1-10wt% of inorganic acid, 0.1-5wt% of phosphate and deionized water.
Abstract translation: 提供了制造薄膜晶体管的方法和用于其的蚀刻溶液组合物，以防止蚀刻残留物的产生，从而降低电短路或布线故障的风险。 薄膜晶体管包括半导体层（110），栅极绝缘层（115），栅极电极（120），层间绝缘膜（125）和源极/漏极电极（130）。 栅电极包括铜或铜合金膜。 源极/漏极包括铜或铜合金膜。 栅电极和源/漏电极由铜或铜合金膜的蚀刻溶液形成。 蚀刻溶液组合物由1-20重量％的无机盐氧化剂，1-10重量％的无机酸，0.1-5重量％的磷酸盐和去离子水组成。
-
-
-
-
-
-
-
-
-
Search Results
73
records
(took 0.017 seconds)
