식각액 조성물
    1.
    发明授权
    식각액 조성물 有权
    蚀刻剂组成

    公开(公告)号:KR101804572B1

    公开(公告)日:2017-12-05

    申请号:KR1020100097748

    申请日:2010-10-07

    Abstract: 본발명은철 화합물 0.1 중량% 내지 10 중량%; 질산 0.1 중량% 내지 10 중량%; 함불소화합물 0.01 중량% 내지 5 중량%; 및잔량의물을포함하고, 인산염화합물 0.1 중량% 내지 5 중량%를추가로포함하는인듐계금속막, 알루미늄계금속막, 및티타늄계또는몰리브덴계금속막으로이루어진삼중막의식각액조성물에관한것이다.

    Abstract translation: 本发明涉及铁化合物0.1-10重量% 0.1至10重量%的硝酸; 0.01重量%至5重量%的氟化合物; 并且还含有一定量的残留水,并且还包含0.1重量%至5重量%的磷酸盐化合物,铝基金属膜以及钛基或钼基金属膜。

    식각액 조성물 및 이를 이용한 식각 방법
    2.
    发明公开
    식각액 조성물 및 이를 이용한 식각 방법 无效
    蚀刻溶液组合物和使用其蚀刻的方法

    公开(公告)号:KR1020110087582A

    公开(公告)日:2011-08-03

    申请号:KR1020100007068

    申请日:2010-01-26

    Abstract: PURPOSE: An etchant composition is provided to avoid the residue generation after an etching process while not damaging a photoresist in an etching process and to improve productivity in the manufacture of an electronic component substrate such as a flat panel display. CONSTITUTION: An etchant composition for a transparent electrode layer comprises inorganic acids, compound including ammonium(NH4+), cyclic amine compound, and remaining amount of water. The etchant composition further includes at least one selected from surfactants, metal ion scavenger and corrosion inhibitor. A method for etching the transparent electrode layer comprises the steps of: forming a transparent electrode layer on a substrate; forming a photoresist pattern on the transparent electrode layer; and etching the transparent electrode layer using the etchant.

    Abstract translation: 目的:提供蚀刻剂组合物以避免在蚀刻工艺之后残留物产生,同时在蚀刻工艺中不损坏光致抗蚀剂并提高电子元件基板如平板显示器的制造中的生产率。 构成:用于透明电极层的蚀刻剂组合物包括无机酸,包括铵(NH 4 +),环胺化合物和剩余量的水的化合物。 蚀刻剂组合物还包括选自表面活性剂,金属离子清除剂和缓蚀剂中的至少一种。 蚀刻透明电极层的方法包括以下步骤:在基板上形成透明电极层; 在所述透明电极层上形成光致抗蚀剂图案; 并使用蚀刻剂蚀刻透明电极层。

    식각액 조성물
    3.
    发明公开
    식각액 조성물 有权
    空值

    公开(公告)号:KR1020110047130A

    公开(公告)日:2011-05-06

    申请号:KR1020100098368

    申请日:2010-10-08

    CPC classification number: C23F1/16 C09K13/08 C23F1/20 C23F1/30 H01L21/30604

    Abstract: PURPOSE: An etchant composition is provided to ensure excellent etching property to an indium-based metal layer, aluminum-lanthanum-based alloy film, and titanium-based metal film, and excellent etching profile, and to prevent underlayer damage and residue generation. CONSTITUTION: An etchant composition of a trilayer consisting of an indium-based metal layer, aluminum-lanthanum-based alloy film, and titanium-based metal film includes, based on the total weight of the composition, 1-15 weight% of hydrogen peroxide, 0.1-10 weight% of inorganic acid, 1-15 weight% of hydrogen peroxide, 0.1-10 weight% of fluorine-containing compound, and the remaining amount of water.

    Abstract translation: 目的:提供蚀刻剂组合物以确保对铟基金属层,铝 - 镧基合金膜和钛基金属膜的优异的蚀刻性能,优异的蚀刻轮廓,并且防止底层损伤和残留物产生。 构成:由铟基金属层,铝 - 镧基合金膜和钛基金属膜构成的三层的蚀刻剂组成基于组合物的总重量,包括1-15重量%的过氧化氢 ,无机酸0.1-10重量%,过氧化氢1-15重量%,含氟化合物0.1-10重量%,剩余量的水。

    식각액 조성물
    9.
    发明公开
    식각액 조성물 有权
    蚀刻溶液组合物

    公开(公告)号:KR1020110049671A

    公开(公告)日:2011-05-12

    申请号:KR1020100097748

    申请日:2010-10-07

    CPC classification number: C09K13/08 C23F1/20 C23F1/30 H01L21/30604

    Abstract: PURPOSE: An etchant composition is provided to simplify an etching process and to improve productivity by simultaneously etching a triplet film. CONSTITUTION: An etchant composition for etching a triple film is constituted by an indium-based metal film, an aluminum-based metal film, and a titanium-based or molybdenum-based metal film, wherein the etchant composition comprises: 0.1 wt % to 10 wt % of a ferrous compound; 0.1 wt % to 10 wt % of nitric acid; 0.01 wt % to 5 wt % of a fluorine compound; with the remainder being water, and further comprises 0.1 wt % to 5 wt % of a phosphate compound.

    Abstract translation: 目的:提供蚀刻剂组合物以简化蚀刻工艺并通过同时蚀刻三重态膜来提高生产率。 构成:用于蚀刻三层膜的蚀刻剂组合物由铟基金属膜,铝基金属膜和钛基或钼基金属膜构成,其中蚀刻剂组合物包含:0.1重量%至10重量% 重量%的亚铁化合物; 0.1重量%至10重量%的硝酸; 0.01重量%〜5重量%的氟化合物; 剩余部分为水,还含有0.1重量%〜5重量%的磷酸酯化合物。

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