강유전체 메모리 소자 및 그 제조 방법
    5.
    发明授权
    강유전체 메모리 소자 및 그 제조 방법 有权
    电磁存储器件及其制造方法

    公开(公告)号:KR101385735B1

    公开(公告)日:2014-04-21

    申请号:KR1020130028676

    申请日:2013-03-18

    IPC分类号: H01L27/115 H01L21/8247

    摘要: A ferroelectric memory device according to an embodiment of the present invention includes a substrate, a gate electrode which is arranged on the substrate, a ferroelectric layer which is arranged on the gate electrode, a first insulating layer which is arranged on the ferroelectric layer, a drain electrode which is arranged on a part of the first insulating layer, a second insulating layer which is arranged on the drain electrode, a channel layer which is arranged on the second insulating layer and the first insulating layer, and a source electrode which is arranged on the channel layer. The channel layer is arranged between one side of the drain electrode and the source electrode. One side of the drain electrode and the source electrode are in contact with the channel layer.

    摘要翻译: 根据本发明实施例的铁电存储器件包括衬底,布置在衬底上的栅电极,布置在栅电极上的铁电层,布置在铁电层上的第一绝缘层, 布置在第一绝缘层的一部分上的漏电极,布置在漏电极上的第二绝缘层,布置在第二绝缘层和第一绝缘层上的沟道层,以及布置在第一绝缘层上的源电极 在通道层。 沟道层布置在漏电极的一侧和源电极之间。 漏电极和源电极的一侧与沟道层接触。

    탄소체를 포함하는 그래핀 도전층, 그 제조 방법, 그를 포함하는 광전소자, 태양전지 및 전자 소자
    8.
    发明授权
    탄소체를 포함하는 그래핀 도전층, 그 제조 방법, 그를 포함하는 광전소자, 태양전지 및 전자 소자 有权
    具有碳成员的石墨导电层,其制造方法,以及光电器件,太阳能电池和具有该成像器件的电子器件

    公开(公告)号:KR101375145B1

    公开(公告)日:2014-03-21

    申请号:KR1020130042301

    申请日:2013-04-17

    摘要: The present invention relates to a method for manufacturing a graphene conductive layer capable of forming a graphene conductive layer by imaging a graphene layer without deformation or damage using carbon. According to one embodiment of the present invention, the method for manufacturing a conductive layer includes: a step of forming a graphene layer on a first substrate; a step of forming a coating layer including carbon and a dispersant on the graphene layer; a step of removing the dispersant from the coating layer to leave the carbon on the graphene layer; a step of thermal-processing the graphene layer to combine the carbon to the graphene layer; a step of separating the graphene layer by removing the first substrate; and a step of forming a graphene conductive layer by imaging the separated graphene layer onto a second substrate. [Reference numerals] (S110) Form a graphene layer on a first substrate; (S120) Form a coating layer including carbon and a dispersant on the graphene layer; (S130) Remove the dispersant from the coating layer to leave the carbon on the graphene layer; (S140) Perform thermal-processing of the graphene layer to combine the carbon to the graphene layer; (S150) Separate the graphene layer by removing the first substrate; (S160) Form a graphene conductive layer by imaging the separated graphene layer onto a second substrate

    摘要翻译: 本发明涉及一种制造石墨烯导电层的方法,所述石墨烯导电层能够通过使用碳形成石墨烯层而不产生变形或破坏来形成石墨烯导电层。 根据本发明的一个实施例,制造导电层的方法包括:在第一基板上形成石墨烯层的步骤; 在石墨烯层上形成包含碳和分散剂的涂层的步骤; 从涂层去除分散剂以将碳留在石墨烯层上的步骤; 将石墨烯层热处理以将碳与石墨烯层组合的步骤; 通过去除第一基板来分离石墨烯层的步骤; 以及通过将分离的石墨烯层成像到第二基板上来形成石墨烯导电层的步骤。 (S110)在第一基板上形成石墨烯层; (S120)在石墨烯层上形成包含碳和分散剂的涂层; (S130)从涂层中除去分散剂,将碳留在石墨烯层上; (S140)进行石墨烯层的热处理以将碳与石墨烯层组合; (S150)通过除去第一基板来分离石墨烯层; (S160)通过将分离的石墨烯层成像到第二基板上来形成石墨烯导电层