-
公开(公告)号:TWI546418B
公开(公告)日:2016-08-21
申请号:TW100123576
申请日:2011-07-08
发明人: 坦波利 迪昂奈許 向魯康德 , TAMBOLI, DNYANESH CHANDRAKANT , 拉馬慕塞 勞爵庫馬 , RAMAMURTHI, RAJKUMAR , 雷尼 大衛 巴里 , RENNIE, DAVID BARRY , 雷 馬乎卡 巴斯卡拉 , RAO, MADHUKAR BHASKARA , 邦納吉 高坦 , BANERJEE, GAUTAM , 沛瑞斯 郡 艾韋拉德 , PARRIS, GENE EVERAD
CPC分类号: C11D3/2082 , B28D5/0076 , C11D1/14 , C11D3/044 , C11D3/2075 , C11D3/30 , C11D3/33 , C11D11/0047 , H01L21/02076 , H01L21/67075 , H01L21/78 , H01L2224/0381 , H01L2224/04042 , H01L2224/05624 , H01L2224/05647 , H01L2224/94 , H01L2224/03
-
公开(公告)号:TWI467675B
公开(公告)日:2015-01-01
申请号:TW101114791
申请日:2012-04-25
发明人: 柯里爾 德倫西 奎恩汀 , COLLIER, TERENCE QUINTIN , 雷尼 大衛 巴里 , RENNIE, DAVID BARRY , 拉馬慕塞 勞爵庫馬 , RAMAMURTHI, RAJKUMAR , 沛瑞斯 郡 艾韋拉德 , PARRIS, GENE EVERAD
IPC分类号: H01L21/60 , H01L21/603
CPC分类号: H01L24/85 , C11D7/265 , C11D11/0047 , H01L21/4835 , H01L23/3107 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/92 , H01L24/94 , H01L24/97 , H01L2224/0381 , H01L2224/04042 , H01L2224/05624 , H01L2224/05647 , H01L2224/291 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48227 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/48824 , H01L2224/48847 , H01L2224/73265 , H01L2224/83011 , H01L2224/83022 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83855 , H01L2224/8501 , H01L2224/85011 , H01L2224/92247 , H01L2224/94 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2924/15747 , H01L2924/181 , H01L2924/00 , H01L2924/00014 , H01L2924/00012 , H01L2224/03 , H01L2224/83 , H01L2224/85
-
公开(公告)号:TWI538037B
公开(公告)日:2016-06-11
申请号:TW098123763
申请日:2009-07-14
发明人: 柯里爾 德倫西 奎恩汀 , COLLIER, TERENCE QUENTIN , 羅塔 查爾斯 A , LHOTA, CHARLES A. , 雷尼 大衛 巴里 , RENNIE, DAVID BARRY , 拉馬慕塞 勞爵庫馬 , RAMAMURTHI, RAJKUMAR , 雷 馬乎卡 巴斯卡拉 , RAO, MADHUKAR BHASKARA , 坦波利 迪昂奈許 向魯康德 , TAMBOLI, DNYANESH CHANDRAKANT
IPC分类号: H01L21/304 , C11D3/20 , C11D3/33 , C23F11/10
CPC分类号: H01L21/02076 , B28D5/0076 , C11D1/143 , C11D1/22 , C11D1/24 , C11D1/345 , C11D3/2075 , C11D11/0047 , H01L2224/0381 , H01L2224/04042 , H01L2224/05624 , H01L2224/8501
-
公开(公告)号:TW201308455A
公开(公告)日:2013-02-16
申请号:TW101114791
申请日:2012-04-25
发明人: 柯里爾 德倫西 奎恩汀 , COLLIER, TERENCE QUINTIN , 雷尼 大衛 巴里 , RENNIE, DAVID BARRY , 拉馬慕塞 勞爵庫馬 , RAMAMURTHI, RAJKUMAR , 沛瑞斯 郡 艾韋拉德 , PARRIS, GENE EVERAD
IPC分类号: H01L21/60 , H01L21/603
CPC分类号: H01L24/85 , C11D7/265 , C11D11/0047 , H01L21/4835 , H01L23/3107 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/92 , H01L24/94 , H01L24/97 , H01L2224/0381 , H01L2224/04042 , H01L2224/05624 , H01L2224/05647 , H01L2224/291 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48227 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/48824 , H01L2224/48847 , H01L2224/73265 , H01L2224/83011 , H01L2224/83022 , H01L2224/83191 , H01L2224/83192 , H01L2224/83193 , H01L2224/83855 , H01L2224/8501 , H01L2224/85011 , H01L2224/92247 , H01L2224/94 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2924/15747 , H01L2924/181 , H01L2924/00 , H01L2924/00014 , H01L2924/00012 , H01L2224/03 , H01L2224/83 , H01L2224/85
摘要: 本發明關於一種用於處理半導體基材以除去不欲的材料或預備供隨後打線用的半導體基材表面之方法,其中該基材包含一引線架,該引線架包含晶粒、焊墊、接點及導線,該方法包含使該基材與液態清潔組合物接觸的步驟。
简体摘要: 本发明关于一种用于处理半导体基材以除去不欲的材料或预备供随后打线用的半导体基材表面之方法,其中该基材包含一引线架,该引线架包含晶粒、焊垫、接点及导线,该方法包含使该基材与液态清洁组合物接触的步骤。
-
-
-