公开(公告)号：US08900907B2

公开(公告)日：2014-12-02

申请号：US13529256

申请日：2012-06-21

Applicant: Christophe Pautet ,  Arnaud Etcheberry ,  Alexandre Causier ,  Isabelle Gerard

Inventor： Christophe Pautet ,  Arnaud Etcheberry ,  Alexandre Causier ,  Isabelle Gerard

IPC: H01L21/00 ,  H01L27/146 ,  H01L31/18 ,  H01L31/0296

CPC classification number: H01L27/1465 ,  H01L27/14696 ,  H01L31/02966 ,  H01L31/1832 ,  H01L31/1892 ,  Y02E10/50

Abstract: A method for removing the growth substrate of a circuit of electromagnetic radiation detection, especially in the infrared or visible range, said detection circuit including a layer of detection of said radiation made of Hg(1-x)CdxTe obtained by liquid or vapor phase epitaxy or by molecular beam epitaxy, said detection circuit being hybridized on a read circuit. The method includes submitting the growth substrate to a mechanical or chem.-mech. polishing step or to a chemical etch step to decrease its thickness, all the way to an interface area between the material of the detection circuit and the growth substrate; and submitting the interface thus obtained to an iodine treatment.

Abstract translation: 一种用于去除特别是在红外线或可见光范围内的电磁辐射检测电路的生长衬底的方法，所述检测电路包括由液相或气相外延获得的Hg（1-x）CdxTe制成的所述辐射的检测层 或通过分子束外延，所述检测电路在读取电路上杂交。 该方法包括将生长底物提交至机械或化学机械。 抛光步骤或化学蚀刻步骤以减小其厚度，一直到检测电路的材料与生长衬底之间的界面区域; 并将所获得的界面提交碘治疗。

公开(公告)号：US20130005068A1

公开(公告)日：2013-01-03

申请号：US13529256

申请日：2012-06-21

Applicant: Christophe PAUTET ,  Arnaud ETCHEBERRY ,  Alexandre CAUSIER ,  Isabelle GERARD

Inventor： Christophe PAUTET ,  Arnaud ETCHEBERRY ,  Alexandre CAUSIER ,  Isabelle GERARD

IPC: H01L31/18

CPC classification number: H01L27/1465 ,  H01L27/14696 ,  H01L31/02966 ,  H01L31/1832 ,  H01L31/1892 ,  Y02E10/50

Abstract: A method for removing the growth substrate of a circuit of electromagnetic radiation detection, especially in the infrared or visible range, said detection circuit including a layer of detection of said radiation made of Hg(1-x)CdxTe obtained by liquid or vapor phase epitaxy or by molecular beam epitaxy, said detection circuit being hybridized on a read circuit. The method includes submitting the growth substrate to a mechanical or chem.-mech. polishing step or to a chemical etch step to decrease its thickness, all the way to an interface area between the material of the detection circuit and the growth substrate; and submitting the interface thus obtained to an iodine treatment.

Abstract translation: 一种用于去除特别是在红外线或可见光范围内的电磁辐射检测电路的生长衬底的方法，所述检测电路包括由液相或气相外延获得的Hg（1-x）CdxTe制成的所述辐射的检测层 或通过分子束外延，所述检测电路在读取电路上杂交。 该方法包括将生长底物提交至机械或化学机械。 抛光步骤或化学蚀刻步骤以减小其厚度，一直到检测电路的材料与生长衬底之间的界面区域; 并将所获得的界面提交碘治疗。