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1.发明授权公开(公告)号：US09297764B2
公开(公告)日：2016-03-29
申请号：US13574975
申请日：2011-02-07
Applicant: Jean-François Guillemoles , Arnaud Etcheberry , Isabelle Gerard , Pierre Tran-Van
Inventor： Jean-François Guillemoles , Arnaud Etcheberry , Isabelle Gerard , Pierre Tran-Van
CPC classification number: G01N21/6489 , G01N21/4738 , G01N2021/6493 , G01N2201/065 , H02S50/10
Abstract: The invention relates to a method for determining the maximum open circuit voltage and the power that can be output by a photoconverter material subject to a measurement light intensity, the method including the following steps: measuring the photoluminescent intensity of the material, measuring the absorption rate of the photoconverter material at a second wavelength substantially equal to the photoluminescent wavelength of the photoconverter material, determining the maximum open circuit voltage of the photoconverter material with the measurement light intensity by means of the absorption rate and the photoluminescent intensity measured at substantially the same wavelength; said invention being characterized in that the light source and the photoconverter material are arranged such that the angular distributions of the rays incident on and emitted by the lit surface of the material and collected by the detector are substantially identical.
Abstract translation: 本发明涉及一种用于确定最大开路电压的方法和可由经受测量光强度的光转换器材料输出的功率，该方法包括以下步骤：测量材料的光致发光强度，测量吸收率 在基本上等于光转换器材料的光致发光波长的第二波长处的光转换器材料，通过吸收速率和基本上相同的波长测量的光致发光强度来确定具有测量光强度的光转换器材料的最大开路电压 ; 所述发明的特征在于，光源和光转换器材料被布置成使得入射到材料的点亮表面并由检测器收集的射线的角度分布基本相同。
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2.发明申请公开(公告)号：US20130066574A1
公开(公告)日：2013-03-14
申请号：US13574975
申请日：2011-02-07
Applicant: Jean-François Guillemoles , Arnaud Etcheberry , Isabelle Gerard , Pierre Tran-van
Inventor： Jean-François Guillemoles , Arnaud Etcheberry , Isabelle Gerard , Pierre Tran-van
CPC classification number: G01N21/6489 , G01N21/4738 , G01N2021/6493 , G01N2201/065 , H02S50/10
Abstract: The invention relates to a method for determining the maximum open circuit voltage and the power that can be output by a photoconverter material subject to a measurement light intensity, the method including the following steps: measuring the photoluminescent intensity of the material, measuring the absorption rate of the photoconverter material at a second wavelength substantially equal to the photoluminescent wavelength of the photoconverter material, determining the maximum open circuit voltage of the photoconverter material with the measurement light intensity by means of the absorption rate and the photoluminescent intensity measured at substantially the same wavelength; said invention being characterised in that the light source and the photoconverter material are arranged such that the angular distributions of the rays incident on and emitted by the lit surface of the material and collected by the detector are substantially identical.
Abstract translation: 本发明涉及一种用于确定最大开路电压的方法和可由经受测量光强度的光转换器材料输出的功率，该方法包括以下步骤：测量材料的光致发光强度，测量吸收率 在基本上等于光转换器材料的光致发光波长的第二波长处的光转换器材料，通过吸收速率和基本上相同的波长测量的光致发光强度来确定具有测量光强度的光转换器材料的最大开路电压 ; 所述发明的特征在于，光源和光转换器材料被布置成使得入射到材料的点亮表面并由检测器收集的射线的角度分布基本相同。
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3.发明授权公开(公告)号：US08900907B2
公开(公告)日：2014-12-02
申请号：US13529256
申请日：2012-06-21
Applicant: Christophe Pautet , Arnaud Etcheberry , Alexandre Causier , Isabelle Gerard
Inventor： Christophe Pautet , Arnaud Etcheberry , Alexandre Causier , Isabelle Gerard
IPC: H01L21/00 , H01L27/146 , H01L31/18 , H01L31/0296
CPC classification number: H01L27/1465 , H01L27/14696 , H01L31/02966 , H01L31/1832 , H01L31/1892 , Y02E10/50
Abstract: A method for removing the growth substrate of a circuit of electromagnetic radiation detection, especially in the infrared or visible range, said detection circuit including a layer of detection of said radiation made of Hg(1-x)CdxTe obtained by liquid or vapor phase epitaxy or by molecular beam epitaxy, said detection circuit being hybridized on a read circuit. The method includes submitting the growth substrate to a mechanical or chem.-mech. polishing step or to a chemical etch step to decrease its thickness, all the way to an interface area between the material of the detection circuit and the growth substrate; and submitting the interface thus obtained to an iodine treatment.
Abstract translation: 一种用于去除特别是在红外线或可见光范围内的电磁辐射检测电路的生长衬底的方法，所述检测电路包括由液相或气相外延获得的Hg（1-x）CdxTe制成的所述辐射的检测层 或通过分子束外延，所述检测电路在读取电路上杂交。 该方法包括将生长底物提交至机械或化学机械。 抛光步骤或化学蚀刻步骤以减小其厚度，一直到检测电路的材料与生长衬底之间的界面区域; 并将所获得的界面提交碘治疗。
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4.发明申请METHOD FOR MANUFACTURING AN ELECTROMAGNETIC RADIATION DETECTOR AND DETECTOR OBTAINED BY SUCH A METHOD 有权用于制造电磁辐射检测器的方法和通过这种方法获得的检测器公开(公告)号：US20130005068A1
公开(公告)日：2013-01-03
申请号：US13529256
申请日：2012-06-21
Applicant: Christophe PAUTET , Arnaud ETCHEBERRY , Alexandre CAUSIER , Isabelle GERARD
Inventor： Christophe PAUTET , Arnaud ETCHEBERRY , Alexandre CAUSIER , Isabelle GERARD
IPC: H01L31/18
CPC classification number: H01L27/1465 , H01L27/14696 , H01L31/02966 , H01L31/1832 , H01L31/1892 , Y02E10/50
Abstract: A method for removing the growth substrate of a circuit of electromagnetic radiation detection, especially in the infrared or visible range, said detection circuit including a layer of detection of said radiation made of Hg(1-x)CdxTe obtained by liquid or vapor phase epitaxy or by molecular beam epitaxy, said detection circuit being hybridized on a read circuit. The method includes submitting the growth substrate to a mechanical or chem.-mech. polishing step or to a chemical etch step to decrease its thickness, all the way to an interface area between the material of the detection circuit and the growth substrate; and submitting the interface thus obtained to an iodine treatment.
Abstract translation: 一种用于去除特别是在红外线或可见光范围内的电磁辐射检测电路的生长衬底的方法，所述检测电路包括由液相或气相外延获得的Hg（1-x）CdxTe制成的所述辐射的检测层 或通过分子束外延，所述检测电路在读取电路上杂交。 该方法包括将生长底物提交至机械或化学机械。 抛光步骤或化学蚀刻步骤以减小其厚度，一直到检测电路的材料与生长衬底之间的界面区域; 并将所获得的界面提交碘治疗。
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