公开(公告)号：US08900907B2

公开(公告)日：2014-12-02

申请号：US13529256

申请日：2012-06-21

Applicant: Christophe Pautet ,  Arnaud Etcheberry ,  Alexandre Causier ,  Isabelle Gerard

Inventor： Christophe Pautet ,  Arnaud Etcheberry ,  Alexandre Causier ,  Isabelle Gerard

IPC: H01L21/00 ,  H01L27/146 ,  H01L31/18 ,  H01L31/0296

CPC classification number: H01L27/1465 ,  H01L27/14696 ,  H01L31/02966 ,  H01L31/1832 ,  H01L31/1892 ,  Y02E10/50

Abstract: A method for removing the growth substrate of a circuit of electromagnetic radiation detection, especially in the infrared or visible range, said detection circuit including a layer of detection of said radiation made of Hg(1-x)CdxTe obtained by liquid or vapor phase epitaxy or by molecular beam epitaxy, said detection circuit being hybridized on a read circuit. The method includes submitting the growth substrate to a mechanical or chem.-mech. polishing step or to a chemical etch step to decrease its thickness, all the way to an interface area between the material of the detection circuit and the growth substrate; and submitting the interface thus obtained to an iodine treatment.

Abstract translation: 一种用于去除特别是在红外线或可见光范围内的电磁辐射检测电路的生长衬底的方法，所述检测电路包括由液相或气相外延获得的Hg（1-x）CdxTe制成的所述辐射的检测层 或通过分子束外延，所述检测电路在读取电路上杂交。 该方法包括将生长底物提交至机械或化学机械。 抛光步骤或化学蚀刻步骤以减小其厚度，一直到检测电路的材料与生长衬底之间的界面区域; 并将所获得的界面提交碘治疗。

公开(公告)号：US20130005068A1

公开(公告)日：2013-01-03

申请号：US13529256

申请日：2012-06-21

Applicant: Christophe PAUTET ,  Arnaud ETCHEBERRY ,  Alexandre CAUSIER ,  Isabelle GERARD

Inventor： Christophe PAUTET ,  Arnaud ETCHEBERRY ,  Alexandre CAUSIER ,  Isabelle GERARD

IPC: H01L31/18

CPC classification number: H01L27/1465 ,  H01L27/14696 ,  H01L31/02966 ,  H01L31/1832 ,  H01L31/1892 ,  Y02E10/50

Abstract: A method for removing the growth substrate of a circuit of electromagnetic radiation detection, especially in the infrared or visible range, said detection circuit including a layer of detection of said radiation made of Hg(1-x)CdxTe obtained by liquid or vapor phase epitaxy or by molecular beam epitaxy, said detection circuit being hybridized on a read circuit. The method includes submitting the growth substrate to a mechanical or chem.-mech. polishing step or to a chemical etch step to decrease its thickness, all the way to an interface area between the material of the detection circuit and the growth substrate; and submitting the interface thus obtained to an iodine treatment.

Abstract translation: 一种用于去除特别是在红外线或可见光范围内的电磁辐射检测电路的生长衬底的方法，所述检测电路包括由液相或气相外延获得的Hg（1-x）CdxTe制成的所述辐射的检测层 或通过分子束外延，所述检测电路在读取电路上杂交。 该方法包括将生长底物提交至机械或化学机械。 抛光步骤或化学蚀刻步骤以减小其厚度，一直到检测电路的材料与生长衬底之间的界面区域; 并将所获得的界面提交碘治疗。

公开(公告)号：US07239001B2

公开(公告)日：2007-07-03

申请号：US10492184

申请日：2002-11-15

Applicant: Christophe Pautet ,  Xavier Hugon

Inventor： Christophe Pautet ,  Xavier Hugon

IPC: H01L33/00 ,  H01L31/0216

CPC classification number: G02B5/284 ,  G01J3/26 ,  G02B5/281 ,  G02B26/001

Abstract: The invention relates to wavelength-selective and tunable optical filters for transmitting the light in a narrow optical spectral band, centered around an adjustable wavelength, and for blocking the transmission of wavelengths lying outside of this band.In a micromachined monolithic structure containing the optical filter proper, the component comprises a low-absorption light detection element used for slaving the tuning control of the filter to a wavelength received by the filter, this element transmitting the majority of the radiation at this wavelength. The filter is a Fabry-Pérot interferometric filter, the cavity (C) of which is tuned to a value that maximizes the power detected by the light detection element. The filter is preferably based on layers of indium phosphide and air gaps. The detection element preferably comprises a layer of gallium-indium arsenide 74 suitable for detection of the intended wavelength band.

Abstract translation: 本发明涉及波长选择性和可调谐光学滤波器，用于以窄的光谱带传输光，以可调节的波长为中心，并且用于阻挡位于该带外的波长的透射。 在包含光学滤波器本身的微加工单体结构中，该部件包括用于将滤波器的调谐控制用于由滤波器接收的波长的低吸收光检测元件，该元件透射该波长的大部分辐射。 滤波器是Fabry-Pérot干涉滤波器，其空腔（C）被调谐到使由光检测元件检测到的功率最大化的值。 过滤器优选基于磷化铟层和气隙。 检测元件优选地包括适于检测预期波长带的砷化镓砷化物74层。

公开(公告)号：US20050018331A1

公开(公告)日：2005-01-27

申请号：US10492184

申请日：2002-11-15

Applicant: Christophe Pautet ,  Xavier Hugon

Inventor： Christophe Pautet ,  Xavier Hugon

IPC: G01J3/26 ,  G02B5/28 ,  G02B26/00 ,  G02F1/01 ,  H01L31/0232 ,  G02B5/22

CPC classification number: G02B5/284 ,  G01J3/26 ,  G02B5/281 ,  G02B26/001

Abstract: The invention relates to wavelength-selective and tunable optical filters for transmitting the light in a narrow optical spectral band, centered around an adjustable wavelength, and for blocking the transmission of wavelengths lying outside of this band. In a micromachined monolithic structure containing the optical filter proper, the component comprises a low-absorption light detection element used for slaving the tuning control of the filter to a wavelength received by the filter, this element transmitting the majority of the radiation at this wavelength. The filter is a Fabry-Pérot interferometric filter, the cavity (C) of which is tuned to a value that maximizes the power detected by the light detection element. The filter is preferably based on layers of indium phosphide and air gaps. The detection element preferably comprises a layer of gallium-indium arsenide 74 suitable for detection of the intended wavelength band.

Abstract translation: 本发明涉及波长选择性和可调谐光学滤波器，用于以窄的光谱带传输光，以可调节的波长为中心，并且用于阻挡位于该带外的波长的透射。 在包含光学滤波器本身的微加工单体结构中，该部件包括用于将滤波器的调谐控制用于由滤波器接收的波长的低吸收光检测元件，该元件透射该波长的大部分辐射。 滤波器是Fabry-Pérot干涉滤波器，其空腔（C）被调谐到使由光检测元件检测到的功率最大化的值。 过滤器优选基于磷化铟层和气隙。 检测元件优选地包括适于检测预期波长带的砷化镓砷化物74层。