公开(公告)号：US06635388B1

公开(公告)日：2003-10-21

申请号：US09429837

申请日：1999-10-29

申请人： Christoph Friedrich ,  Uwe Griesinger ,  Rainer Pforr ,  Dietrich Widmann ,  Andreas Grassmann

发明人： Christoph Friedrich ,  Uwe Griesinger ,  Rainer Pforr ,  Dietrich Widmann ,  Andreas Grassmann

IPC分类号： G03F900

CPC分类号： G03F1/34 ,  G03F7/2022

摘要： The invention relates to a phase shift mask for lithographically producing small structures at the limit of a resolution that is predetermined by the wavelength of the exposure radiation. The phase shift mask has first regions A and second regions B that effect a phase-shift relative to the first regions. The second regions are arranged beside the first regions for producing a sudden phase shift along the boundaries between the first and the second regions. Individual first regions touch one another via corners at points, at which the second regions also touch one another via corners. The result is that the boundaries between first and second regions merge at these points and these points are opaque to the radiation. The invention makes it possible to expose extremely small contact holes with just a single exposure and thus leads to a reduction of costs in the fabrication of integrated semiconductor circuits.

摘要翻译： 本发明涉及一种用于光刻产生在由曝光辐射的波长预定的分辨率极限处的小结构的相移掩模。 相移掩模具有相对于第一区域进行相移的第一区域A和第二区域B. 第二区域布置在第一区域旁边，用于沿着第一和第二区域之间的边界产生突然的相移。 单个第一区域通过角点彼此接触，在第二区域也通过拐角彼此接触。 结果是第一和第二区域之间的边界在这些点处合并，并且这些点对辐射是不透明的。 本发明使得可以仅用一次曝光来暴露极小的接触孔，从而导致集成半导体电路的制造成本的降低。

公开(公告)号：US6162564A

公开(公告)日：2000-12-19

申请号：US978354

申请日：1997-11-25

申请人： Katsuhiko Hieda ,  Thomas Fischer ,  Andreas Grassmann

发明人： Katsuhiko Hieda ,  Thomas Fischer ,  Andreas Grassmann

IPC分类号： G03F1/00 ,  G03F7/16 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F7/162 ,  G03F1/50

摘要： A shading film of chrome is formed entirely on one surface of a circular substrate of quartz. The substrate is rotated and resist is applied to the shading film. Since the substrate is shaped in a circle, the resist spreads uniformly on the entire surface of the shading film by the centrifugal force. Therefore, the resist has a substantially uniform film thickness over almost the entire surface of the shading film. This resist is patterned to form a resist pattern. By etching the shading film with the resist pattern used as a mask, a pattern preferable in accuracy of dimensions can be formed.

摘要翻译： 铬的阴影膜完全形成在石英的圆形基板的一个表面上。 旋转衬底，并将抗蚀剂施加到遮光膜上。 由于基板成形为圆形，所以抗蚀剂通过离心力均匀地扩散在遮光膜的整个表面上。 因此，抗蚀剂在遮光膜的几乎整个表面上具有基本均匀的膜厚度。 将该抗蚀剂图案化以形成抗蚀剂图案。 通过用作为掩模的抗蚀剂图案蚀刻遮光膜，可以形成优选尺寸精度的图案。

公开(公告)号：US6025116A

公开(公告)日：2000-02-15

申请号：US829575

申请日：1997-03-31

申请人： Andreas Grassmann

发明人： Andreas Grassmann

IPC分类号： H01L21/28 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  G03F7/26

CPC分类号： H01L21/76802 ,  H01L21/31144

摘要： The photolithographic etching of contact holes in trenches in an insulator layer over a silicon body is improved by adjusting properly the depth of the trench and the thickness of the photoresist used in the photolithography.

摘要翻译： 通过适当地调整沟槽的深度和光刻胶中使用的光致抗蚀剂的厚度来改善在硅体上的绝缘体层中的沟槽中的接触孔中的接触孔的光刻蚀刻。

公开(公告)号：US6063530A

公开(公告)日：2000-05-16

申请号：US999926

申请日：1997-06-23

申请人： Andreas Grassmann

发明人： Andreas Grassmann

IPC分类号： G03F7/20 ,  G03F9/00

CPC分类号： G03F7/70483 ,  G03F7/20

摘要： A lithographic system with improved control of critical dimensions (CD). The lithographic system includes a detector for determining the amount of energy absorbed by the photoresist. This enables the lithographic system to expose each field with the required exposure dose, thus reducing variations in CD.

摘要翻译： 具有改进的关键尺寸（CD）控制的光刻系统。 光刻系统包括用于确定由光致抗蚀剂吸收的能量的量的检测器。 这使得光刻系统能够以所需的曝光剂量曝光每个场，从而减少CD的变化。