公开(公告)号：US20140255606A1

公开(公告)日：2014-09-11

申请号：US14198776

申请日：2014-03-06

Applicant: David Thompson ,  Jeffrey W. Anthis ,  David Knapp ,  Benjamin Schmiege

Inventor： David Thompson ,  Jeffrey W. Anthis ,  David Knapp ,  Benjamin Schmiege

IPC: C23C16/42

CPC classification number: C23C16/42 ,  C23C16/18 ,  C23C16/34 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/76843

Abstract: Described are cobalt-containing films, as well as methods for providing the cobalt-containing films. Certain methods pertain to exposing a substrate surface to a precursor and a co-reactant to provide a cobalt-containing film, the first precursor having a structure represented by: wherein each R is independently C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics, L is a coordinating ligand comprising a Lewis base.

Abstract translation: 描述的是含钴膜，以及用于提供含钴膜的方法。 某些方法涉及将底物表面暴露于前体和共反应物以提供含钴膜，第一前体具有由以下表示的结构：其中每个R独立地为C 1 -C 6取代或未取代的烷烃，支链或 支链烷烃，取代或未取代的烯烃，支链或非支链烯烃，取代或未取代的炔烃，支链或非支链炔烃或取代或未取代的芳烃，L是包含路易斯碱的配位配体。

公开(公告)号：US20140273492A1

公开(公告)日：2014-09-18

申请号：US14206474

申请日：2014-03-12

Applicant: Jeffrey W. Anthis ,  Benjamin Schmiege ,  David Thompson

Inventor： Jeffrey W. Anthis ,  Benjamin Schmiege ,  David Thompson

IPC: H01L21/3213 ,  H01L21/02

CPC classification number: H01L21/32136 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01J37/32715 ,  H01J37/32862 ,  H01L21/32135

Abstract: Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.

Abstract translation: 提供了用于蚀刻包含过渡金属的膜的方法。 某些方法包括激活包含至少一种过渡金属的基底表面，其中基底表面的活化包括将基底表面暴露于加热，等离子体，氧化环境或卤化物转移剂以提供活化的基底表面; 以及将活化的底物表面暴露于包含路易斯碱或pi酸的试剂中，以提供包含一个或多个与试剂配位的一个或多个配体配位的过渡金属原子的气相配位络合物。 某些其它方法提供了选自多层衬底的选择性蚀刻，所述多层衬底包括Co层，Cu层和Ni层中的两层或多层。