Abstract:
The present disclosure provides a mask and a method of determining etching times for etching the mask. In one embodiment, values for a main etching time and an over-etching time are determined simultaneously based on a desired critical dimension (CD) parameter and a desired phase parameter for the mask.
Abstract:
The present invention relates to a MEMS-based micro-oscillator which can generate specific vortical pattern in a micro-channel. The micro-vortex generator is composed of a suspended bridge with a gold-plated, rectangular flat-plate as the primary structure. When an AC current passed through the gold leads under an external magnetic field, the plate will oscillate due to Lorenz force, thereby generating micro-vortices.
Abstract:
A solar-powered photoelectric apparatus comprises a solar cell panel, a rechargeable battery and one or more photoelectric devices. The solar cell panel absorbs light to generate electricity and the electricity is stored in the photoelectric device. The photoelectric device uses power from the rechargeable battery to generate light. In consideration of times of insufficient light to the solar-powered photoelectric apparatus, the photoelectric apparatus may further comprise a USB connector as an interface for charging the rechargeable battery.
Abstract:
The present disclosure provides a mask and a method of determining etching times for etching the mask. In one embodiment, values for a main etching time and an over-etching time are determined simultaneously based on a desired critical dimension (CD) parameter and a desired phase parameter for the mask.
Abstract:
In accordance with the objectives of the invention a new method is provided for the repair of an attenuated phase shifting mask having a contact pattern. The invention etches a single trench in the quartz substrate of the phase shifter mask and removes the impact of a void in the phase shifter material. Alternatively, the invention provides for first conventionally restoring the original dimensions of a contact hole in which a pinhole is present and then etching a single or a double trench in the exposed substrate of the restored contact opening.
Abstract:
An embedded bi-layer structure for an attenuated phase-shifting mask comprises an inner layer with lower transmittance, formed on a substrate; and an outer layer, formed on the inner layer, with higher transmittance and being more chemically stable than the inner layer. A method of forming such an embedded bi-layer structure is provided.
Abstract:
An apparatus for mounting a pellicle onto a mask is provided. In one embodiment, the apparatus comprises a base provided with a track; a dummy plate holder coupled to the base, the dummy plate holder for receiving a dummy plate having an elevated portion on one side thereof; a mask holder for receiving a mask, the mask holder slidably coupled to the base; a pellicle holder for receiving a pellicle frame, the pellicle holder slidably coupled to the base; and drive means being adapted to drive the pellicle holder along the track towards the dummy plate holder, wherein during operation when the pellicle frame is mounted onto the mask causing the mask to contact the dummy plate, the mounting pressure in the mask is distributed by way of the elevated portion in the dummy plate, thus reducing distortion in the mask.
Abstract:
A method is provided for making artificial leather upside down. In the method, an upper color layer is provided on releasing paper and the upper color layer is dried. A lower color layer is provided on the upper color layer and the lower color layer is dried. A paste layer is provided on the lower color layer and the pate layer is preliminarily dried. A substrate is attached to the paste layer. The paste layer is dried. The releasing paper is removed.
Abstract:
An attenuating phase shifting mask for forming contact holes in a layer of negative resist, a method of forming the mask, and a method of forming the contact holes are described. The mask is formed from a mask blank having a layer of attenuating phase shifting material formed on a transparent mask blank. The attenuating phase shifting material has a transmittance of greater than 20% and between about 20% and 50% for light having a wavelength of 193 nanometers. The mask is a dark tone mask having mask elements formed of the attenuating phase shifting material at the locations of the mask corresponding to the locations of the contact holes. The mask is used to expose a layer of negative resist which is then developed to form the contact holes.
Abstract:
A method for exposing a blanket photoresist layer employs: (1) a first direct write exposure of the blanket photoresist layer to form therein an exposed peripheral sub-region of a desired exposed pattern; and (2) a second masked photoexposure of the blanket photoresist layer to form therein a masked photoexposed bulk sub-region of the desired exposed pattern which overlaps but does not extend beyond the exposed peripheral sub-region. The once masked photoexposed once direct write exposed blanket photoresist layer may be developed to form a patterned photoresist layer employed for forming a patterned opaque layer border within an opaque bordered attenuated phase shift mask.