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    Backside structure and methods for BSI image sensors
    1.
    发明授权
    Backside structure and methods for BSI image sensors 有权
    BSI图像传感器的背面结构和方法

    公开(公告)号：US08709854B2

    公开(公告)日：2014-04-29

    申请号：US13620016

    申请日：2012-09-14

    申请人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

    发明人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14685 ,  G02B1/11 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L31/02161 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

    摘要： BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.

    摘要翻译： BSI图像传感器和方法。 在一个实施例中，提供具有传感器阵列和周边区域并具有前侧和后侧表面的基板; 底部抗反射涂层（BARC）在传感器阵列区域和外围区域的上方形成在第一厚度的背侧上; 在BARC上形成第一介电层; 形成金属屏蔽; 从所述传感器阵列区域上方选择性地去除所述金属屏蔽件; 从所述传感器阵列区域上方选择性地去除所述第一介电层，其中所述BARC的第一厚度的一部分也被去除，并且在选择性地去除所述第一介电层的过程中所述BARC的第一厚度的剩余部分保留; 在BARC的其余部分和金属屏蔽层之上形成第二电介质层; 以及在所述第二介电层上形成钝化层。

    Image sensor and method of fabricating same
    2.
    发明授权
    Image sensor and method of fabricating same 有权
    图像传感器及其制造方法

    公开(公告)号：US08674467B2

    公开(公告)日：2014-03-18

    申请号：US13545450

    申请日：2012-07-10

    申请人： Wen-De Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Jeng-Shyan Lin

    发明人： Wen-De Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Jeng-Shyan Lin

    IPC分类号： H01L27/146 ,  H01L31/00

    CPC分类号： H01L27/14685 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

    摘要： Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.

    摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的装置基板。 该方法包括在器件衬底中形成第一和第二辐射感测区域，第一和第二辐射感测区域由隔离结构隔开。 该方法还包括在器件衬底的背面上形成透明层。 该方法还包括在透明层中形成开口，该开口与隔离结构对准。 该方法还包括用不透明材料填充开口。

    System and method for fabricating a 3D image sensor structure
    3.
    发明授权
    System and method for fabricating a 3D image sensor structure 有权
    用于制作3D图像传感器结构的系统和方法

    公开(公告)号：US08669135B2

    公开(公告)日：2014-03-11

    申请号：US13572436

    申请日：2012-08-10

    申请人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang

    发明人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang

    IPC分类号： H01L21/00 ,  H01L27/088

    CPC分类号： H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14696

    摘要： A system and method for fabricating a 3D image sensor structure is disclosed. The method comprises providing an image sensor with a backside illuminated photosensitive region on a substrate, applying a first dielectric layer to the first side of the substrate opposite the substrate side where image data is gathered, and applying a semiconductor layer that is optionally polysilicon, to the first dielectric layer. A least one control transistor may be created on the first dielectric layer, within the semiconductor layer and may optionally be a row select, reset or source follower transistor. An intermetal dielectric may be applied over the first dielectric layer; and may have at least one metal interconnect disposed therein. A second interlevel dielectric layer may be disposed on the control transistors. The dielectric layers and semiconductor layer may be applied by bonding a wafer to the substrate or via deposition.

    摘要翻译： 公开了一种用于制造3D图像传感器结构的系统和方法。 该方法包括在基板上提供具有背面照射感光区域的图像传感器，将第一电介质层施加到与图像数据收集的基板侧相对的基板的第一侧，以及施加可选择的多晶硅的半导体层， 第一介电层。 可以在半导体层内的第一介电层上形成至少一个控制晶体管，并且可以可选地是行选择，复位或源极跟随器晶体管。 可以在第一介电层上施加金属间电介质; 并且可以具有布置在其中的至少一个金属互连。 第二层间电介质层可以设置在控制晶体管上。 电介质层和半导体层可以通过将晶片结合到衬底或通过沉积来施加。

    Image sensor with deep trench isolation structure
    5.
    发明授权
    Image sensor with deep trench isolation structure 有权
    具有深沟槽隔离结构的图像传感器

    公开(公告)号：US08390089B2

    公开(公告)日：2013-03-05

    申请号：US12844642

    申请日：2010-07-27

    申请人： Szu-Ying Chen ,  Chun-Chieh Chuang ,  Jen-Cheng Liu ,  Dun-Nian Yaung

    发明人： Szu-Ying Chen ,  Chun-Chieh Chuang ,  Jen-Cheng Liu ,  Dun-Nian Yaung

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

    摘要： Provided is a back side illuminated image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the front side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a deep trench isolation feature that is disposed adjacent to the radiation-detection device. The image sensor device further includes a doped layer that at least partially surrounds the deep trench isolation feature in a conformal manner.

    摘要翻译： 提供了背面照明图像传感器装置。 图像传感器装置包括具有与前侧相对的前侧和后侧的基板。 图像传感器还包括形成在基板中的放射线检测装置。 放射线检测装置可操作以检测通过背面进入衬底的辐射波。 图像传感器还包括与辐射检测装置相邻设置的深沟槽隔离特征。 图像传感器装置还包括以保形方式至少部分地围绕深沟槽隔离特征的掺杂层。

    Image Sensor and Method of Fabricating Same
    6.
    发明申请
    Image Sensor and Method of Fabricating Same 有权
    图像传感器及其制造方法

    公开(公告)号：US20120273914A1

    公开(公告)日：2012-11-01

    申请号：US13545450

    申请日：2012-07-10

    申请人： Wen-De Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Jeng-Shyan Lin

    发明人： Wen-De Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Jeng-Shyan Lin

    IPC分类号： H01L31/02

    CPC分类号： H01L27/14685 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

    摘要： Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.

    摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的装置基板。 该方法包括在器件衬底中形成第一和第二辐射感测区域，第一和第二辐射感测区域由隔离结构隔开。 该方法还包括在器件衬底的背面上形成透明层。 该方法还包括在透明层中形成开口，该开口与隔离结构对准。 该方法还包括用不透明材料填充开口。

    METHOD FOR GENERATING TWO DIMENSIONS FOR DIFFERENT IMPLANT ENERGIES
    8.
    发明申请
    METHOD FOR GENERATING TWO DIMENSIONS FOR DIFFERENT IMPLANT ENERGIES 有权
    用于生成不同植被能量的两维尺度的方法

    公开(公告)号：US20100233871A1

    公开(公告)日：2010-09-16

    申请号：US12404852

    申请日：2009-03-16

    申请人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Wen-De Wang

    发明人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Wen-De Wang

    IPC分类号： H01L21/266

    CPC分类号： H01L21/266 ,  H01L21/26513 ,  H01L29/66537

    摘要： A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first hard mask layer over the substrate; patterning the first hard mask layer to form one or more first openings having a first critical dimension; performing a first implantation process on the substrate; forming a second hard mask layer over the first hard mask layer to form one or more second openings having a second critical dimension; and performing a second implantation process.

    摘要翻译： 公开了一种用于制造集成电路器件的方法。 该方法包括提供基板; 在衬底上形成第一硬掩模层; 图案化第一硬掩模层以形成具有第一临界尺寸的一个或多个第一开口; 在所述基板上执行第一注入工艺; 在所述第一硬掩模层上形成第二硬掩模层以形成具有第二临界尺寸的一个或多个第二开口; 以及执行第二植入过程。

    SAFETY SYRINGE
    9.
    发明申请
    SAFETY SYRINGE 有权
    安全注射器

    公开(公告)号：US20100125252A1

    公开(公告)日：2010-05-20

    申请号：US12418556

    申请日：2009-04-03

    申请人： Hsi-Hsun Tseng ,  Chih-Ming Wang ,  Po-Liang Lee ,  Chun-Chieh Chuang

    发明人： Hsi-Hsun Tseng ,  Chih-Ming Wang ,  Po-Liang Lee ,  Chun-Chieh Chuang

    IPC分类号： A61M5/32

    CPC分类号： A61M5/3234 ,  A61M2005/323 ,  A61M2005/3241 ,  A61M2005/3242

    摘要： A safety syringe includes an outer barrel, a needle unit, an outer barrel plug, an inner barrel, an inner barrel plug, a needle clamper, and a vacuum generating device. The needle unit is disposed within the front end of the outer barrel. The outer barrel plug is disposed within the outer barrel; the outer barrel plug is connected with the needle unit so as to fix the needle unit. The inner barrel plug is disposed within the front end of the inner barrel. The needle clamper is connected with the inner barrel plug. The needle clamper is able to clamp a rear opening of the needle unit. The vacuum generating device is disposed within the inner barrel, and the needle unit can be retracted into the inner barrel by the low pressure which is generated by the vacuum generating device.

    摘要翻译： 安全注射器包括外筒，针单元，外筒塞，内筒，内筒塞，针夹持器和真空产生装置。 针单元设置在外筒的前端内。 外桶塞设置在外筒内; 外筒塞与针单元连接，以固定针单元。 内筒塞设置在内筒的前端内。 针夹持器与内筒塞连接。 针夹具能够夹紧针单元的后开口。 真空发生装置设置在内筒内，并且针单元可以通过由真空发生装置产生的低压缩回到内筒中。

    Method and structure to reduce dark current in image sensors
    10.
    发明授权
    Method and structure to reduce dark current in image sensors 有权
    降低图像传感器暗电流的方法和结构

    公开(公告)号：US08624311B2

    公开(公告)日：2014-01-07

    申请号：US13238248

    申请日：2011-09-21

    申请人： Chun-Chieh Chuang ,  Chih-Min Lin ,  Ken Wen-Chien Fu ,  Dun-Nian Yaung

    发明人： Chun-Chieh Chuang ,  Chih-Min Lin ,  Ken Wen-Chien Fu ,  Dun-Nian Yaung

    IPC分类号： H01L31/113

    CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643

    摘要： A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.

    摘要翻译： 制造图像传感器的方法包括提供具有像素区域和外围区域的半导体衬底，在像素区域上形成感光元件，以及在像素区域中形成至少一个晶体管和在周边区域中形成至少一个晶体管 。 在像素区域和外围区域中形成至少一个晶体管的步骤包括在像素区域和外围区域中形成栅电极，在像素区域和外围区域上沉积电介质层，部分蚀刻电介质层以形成侧壁间隔物 并且留下覆盖像素区域的电介质层的一部分，以及通过离子注入形成源极/漏极（S / D）区域。