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    NOVEL CMOS IMAGE SENSOR STRUCTURE
    1.
    发明申请
    NOVEL CMOS IMAGE SENSOR STRUCTURE 有权
    新型CMOS图像传感器结构

    公开(公告)号：US20130020662A1

    公开(公告)日：2013-01-24

    申请号：US13185204

    申请日：2011-07-18

    申请人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Wen-De Wang

    发明人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Wen-De Wang

    IPC分类号： H01L31/02

    CPC分类号： H01L27/146 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687

    摘要： Provided is a method of fabricating an image sensor device. The method includes providing a first substrate having a radiation-sensing region disposed therein. The method includes providing a second substrate having a hydrogen implant layer, the hydrogen implant layer dividing the second substrate into a first portion and a second portion. The method includes bonding the first portion of the second substrate to the first substrate. The method includes after the bonding, removing the second portion of the second substrate. The method includes after the removing, forming one or more microelectronic devices in the first portion of the second substrate. The method includes forming an interconnect structure over the first portion of the second substrate, the interconnect structure containing interconnect features that are electrically coupled to the microelectronic devices.

    摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供其中设置有辐射感测区域的第一基板。 该方法包括提供具有氢注入层的第二衬底，氢注入层将第二衬底分成第一部分和第二部分。 该方法包括将第二衬底的第一部分接合到第一衬底。 该方法包括在接合之后，去除第二衬底的第二部分。 该方法包括在去除之后，在第二衬底的第一部分中形成一个或多个微电子器件。 该方法包括在第二基板的第一部分上形成互连结构，所述互连结构包含电耦合到微电子器件的互连特征。

    System and Method for Fabricating a 3D Image Sensor Structure
    3.
    发明申请
    System and Method for Fabricating a 3D Image Sensor Structure 有权
    用于制作3D图像传感器结构的系统和方法

    公开(公告)号：US20140042445A1

    公开(公告)日：2014-02-13

    申请号：US13572436

    申请日：2012-08-10

    申请人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang

    发明人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang

    IPC分类号： H01L31/18 ,  H01L31/0368

    CPC分类号： H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14696

    摘要： A system and method for fabricating a 3D image sensor structure is disclosed. The method comprises providing an image sensor with a backside illuminated photosensitive region on a substrate, applying a first dielectric layer to the first side of the substrate opposite the substrate side where image data is gathered, and applying a semiconductor layer that is optionally polysilicon, to the first dielectric layer. A least one control transistor may be created on the first dielectric layer, within the semiconductor layer and may optionally be a row select, reset or source follower transistor. An intermetal dielectric may be applied over the first dielectric layer; and may have at least one metal interconnect disposed therein. A second interlevel dielectric layer may be disposed on the control transistors. The dielectric layers and semiconductor layer may be applied by bonding a wafer to the substrate or via deposition.

    摘要翻译： 公开了一种用于制造3D图像传感器结构的系统和方法。 该方法包括在基板上提供具有背面照射感光区域的图像传感器，将第一电介质层施加到与图像数据收集的基板侧相对的基板的第一侧，以及施加可选择的多晶硅的半导体层， 第一介电层。 可以在半导体层内的第一介电层上形成至少一个控制晶体管，并且可以可选地是行选择，复位或源极跟随器晶体管。 可以在第一介电层上施加金属间电介质; 并且可以具有布置在其中的至少一个金属互连。 第二层间电介质层可以设置在控制晶体管上。 电介质层和半导体层可以通过将晶片结合到衬底或通过沉积来施加。

    Backside structure for BSI image sensor
    4.
    发明授权
    Backside structure for BSI image sensor 有权
    BSI图像传感器的背面结构

    公开(公告)号：US09356058B2

    公开(公告)日：2016-05-31

    申请号：US13597007

    申请日：2012-08-28

    申请人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

    发明人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

    IPC分类号： H01L21/311 ,  H01L27/146

    CPC分类号： H01L27/1462 ,  H01L27/1464 ,  H01L27/14685

    摘要： An embodiment method for forming an image sensor includes forming an anti-reflective coating over a surface of a semiconductor supporting a photodiode, forming an etching stop layer over the anti-reflective coating, forming a buffer oxide over the etching stop layer, and selectively removing a portion of the buffer oxide through etching, the etching stop layer protecting the anti-reflective coating during the etching. An embodiment image sensor includes a semiconductor disposed in an array region and in a periphery region, the semiconductor supporting a photodiode in the array region, an anti-reflective coating disposed over a surface of the semiconductor, an etching stop layer disposed over the anti-reflective coating, a thickness of the etching stop layer over the photodiode in the array region less than a thickness of the etching stop layer in the periphery region, and a buffer oxide disposed over the etching stop layer in the periphery region.

    摘要翻译： 用于形成图像传感器的实施例方法包括在支撑光电二极管的半导体的表面上形成抗反射涂层，在抗反射涂层上形成蚀刻停止层，在蚀刻停止层上形成缓冲氧化物，并且选择性地去除 通过蚀刻的缓冲氧化物的一部分，在蚀刻期间保护抗反射涂层的蚀刻停止层。 一种实施方式的图像传感器包括：配置在阵列区域和外围区域中的半导体，支撑阵列区域中的光电二极管的半导体，设置在半导体表面上的抗反射涂层， 在阵列区域中的光电二极管上的蚀刻停止层的厚度小于周边区域中的蚀刻停止层的厚度，以及设置在周边区域的蚀刻停止层上的缓冲氧化物。

    Backside Structure for BSI Image Sensor
    6.
    发明申请
    Backside Structure for BSI Image Sensor 有权
    BSI图像传感器的背面结构

    公开(公告)号：US20130299931A1

    公开(公告)日：2013-11-14

    申请号：US13597007

    申请日：2012-08-28

    申请人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

    发明人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/1462 ,  H01L27/1464 ,  H01L27/14685

    摘要： An embodiment method for forming an image sensor includes forming an anti-reflective coating over a surface of a semiconductor supporting a photodiode, forming an etching stop layer over the anti-reflective coating, forming a buffer oxide over the etching stop layer, and selectively removing a portion of the buffer oxide through etching, the etching stop layer protecting the anti-reflective coating during the etching. An embodiment image sensor includes a semiconductor disposed in an array region and in a periphery region, the semiconductor supporting a photodiode in the array region, an anti-reflective coating disposed over a surface of the semiconductor, an etching stop layer disposed over the anti-reflective coating, a thickness of the etching stop layer over the photodiode in the array region less than a thickness of the etching stop layer in the periphery region, and a buffer oxide disposed over the etching stop layer in the periphery region.

    摘要翻译： 用于形成图像传感器的实施例方法包括在支撑光电二极管的半导体的表面上形成抗反射涂层，在抗反射涂层上形成蚀刻停止层，在蚀刻停止层上形成缓冲氧化物，并且选择性地去除 通过蚀刻的缓冲氧化物的一部分，在蚀刻期间保护抗反射涂层的蚀刻停止层。 一种实施方式的图像传感器包括：配置在阵列区域和外围区域中的半导体，支撑阵列区域中的光电二极管的半导体，设置在半导体表面上的抗反射涂层， 在阵列区域中的光电二极管上的蚀刻停止层的厚度小于周边区域中的蚀刻停止层的厚度，以及设置在周边区域的蚀刻停止层上的缓冲氧化物。

    Backside Structure and Methods for BSI Image Sensors
    7.
    发明申请
    Backside Structure and Methods for BSI Image Sensors 有权
    BSI图像传感器的背面结构和方法

    公开(公告)号：US20130299886A1

    公开(公告)日：2013-11-14

    申请号：US13620016

    申请日：2012-09-14

    申请人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

    发明人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

    IPC分类号： H01L27/146 ,  H01L31/0216 ,  H01L31/18

    CPC分类号： H01L27/14685 ,  G02B1/11 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L31/02161 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

    摘要： BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.

    摘要翻译： BSI图像传感器和方法。 在一个实施例中，提供具有传感器阵列和周边区域并具有前侧和后侧表面的基板; 底部抗反射涂层（BARC）在传感器阵列区域和外围区域的上方形成在第一厚度的背侧上; 在BARC上形成第一介电层; 形成金属屏蔽; 从所述传感器阵列区域上方选择性地去除所述金属屏蔽件; 从所述传感器阵列区域上方选择性地去除所述第一介电层，其中所述BARC的第一厚度的一部分也被去除，并且在选择性地去除所述第一介电层的过程中所述BARC的第一厚度的剩余部分保留; 在BARC的其余部分和金属屏蔽层之上形成第二电介质层; 以及在所述第二介电层上形成钝化层。

    CMOS image sensor structure
    8.
    发明授权
    CMOS image sensor structure 有权

    公开(公告)号：US08564085B2

    公开(公告)日：2013-10-22

    申请号：US13185204

    申请日：2011-07-18

    申请人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Wen-De Wang

    发明人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Wen-De Wang

    IPC分类号： H01L31/14

    CPC分类号： H01L27/146 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687

    摘要： Provided is a method of fabricating an image sensor device. The method includes providing a first substrate having a radiation-sensing region disposed therein. The method includes providing a second substrate having a hydrogen implant layer, the hydrogen implant layer dividing the second substrate into a first portion and a second portion. The method includes bonding the first portion of the second substrate to the first substrate. The method includes after the bonding, removing the second portion of the second substrate. The method includes after the removing, forming one or more microelectronic devices in the first portion of the second substrate. The method includes forming an interconnect structure over the first portion of the second substrate, the interconnect structure containing interconnect features that are electrically coupled to the microelectronic devices.

    Back side illuminated image sensor with improved stress immunity
    9.
    发明授权
    Back side illuminated image sensor with improved stress immunity 有权
    背面照明图像传感器，具有改善的抗应力

    公开(公告)号：US08405182B2

    公开(公告)日：2013-03-26

    申请号：US13099092

    申请日：2011-05-02

    申请人： Keng-Yu Chou ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Pao-Tung Cheng ,  Wen-De Wang ,  Chun-Chieh Chuang ,  Min-Feng Kao

    发明人： Keng-Yu Chou ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Pao-Tung Cheng ,  Wen-De Wang ,  Chun-Chieh Chuang ,  Min-Feng Kao

    IPC分类号： H01L27/146 ,  H01L31/18

    CPC分类号： H01L27/1464 ,  H01L27/14623 ,  H01L27/14636

    摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the first side. The substrate has a pixel region and a periphery region. The image sensor device includes a plurality of radiation-sensing regions disposed in the pixel region of the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes a reference pixel disposed in the periphery region. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers. The image sensor device includes a film formed over the back side of the substrate. The film causes the substrate to experience a tensile stress. The image sensor device includes a radiation-blocking device disposed over the film.

    摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有与第一侧相对的前侧和后侧的基板。 基板具有像素区域和外围区域。 图像传感器装置包括设置在基板的像素区域中的多个辐射感测区域。 每个辐射感测区域可操作以感测通过后侧朝向辐射感测区域投射的辐射。 图像传感器装置包括设置在周边区域中的参考像素。 图像传感器装置包括耦合到基板的前侧的互连结构。 互连结构包括多个互连层。 图像传感器装置包括在基板的背面上形成的膜。 该膜导致基材经受拉伸应力。 图像传感器装置包括设置在膜上的辐射阻挡装置。

    Backside structure and methods for BSI image sensors
    10.
    发明授权
    Backside structure and methods for BSI image sensors 有权
    BSI图像传感器的背面结构和方法

    公开(公告)号：US08709854B2

    公开(公告)日：2014-04-29

    申请号：US13620016

    申请日：2012-09-14

    申请人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

    发明人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Keng-Yu Chou ,  Shuang-Ji Tsai ,  Min-Feng Kao

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14685 ,  G02B1/11 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L31/02161 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

    摘要： BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.

    摘要翻译： BSI图像传感器和方法。 在一个实施例中，提供具有传感器阵列和周边区域并具有前侧和后侧表面的基板; 底部抗反射涂层（BARC）在传感器阵列区域和外围区域的上方形成在第一厚度的背侧上; 在BARC上形成第一介电层; 形成金属屏蔽; 从所述传感器阵列区域上方选择性地去除所述金属屏蔽件; 从所述传感器阵列区域上方选择性地去除所述第一介电层，其中所述BARC的第一厚度的一部分也被去除，并且在选择性地去除所述第一介电层的过程中所述BARC的第一厚度的剩余部分保留; 在BARC的其余部分和金属屏蔽层之上形成第二电介质层; 以及在所述第二介电层上形成钝化层。