公开(公告)号：US20140252411A1

公开(公告)日：2014-09-11

申请号：US13976369

申请日：2013-03-11

Applicant: Yimin Kang ,  Han-Din D. Liu ,  Ansheng Liu

Inventor： Yimin Kang ,  Han-Din D. Liu ,  Ansheng Liu

IPC: H01L31/028 ,  H01L31/0232 ,  H01L31/107 ,  H01L31/18 ,  H01L31/105

CPC classification number: H01L31/028 ,  G02B6/12007 ,  G02B6/122 ,  G02B6/131 ,  G02B6/30 ,  H01L31/02327 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1804 ,  Y02E10/547

Abstract: A low voltage APD is disposed at an end of a waveguide extending laterally within a silicon device layer of a PIC chip. The APD is disposed over an inverted re-entrant mirror co-located at the end of the waveguide to couple light by internal reflection from the waveguide to an under side of the APD. In exemplary embodiments, a 45°-55° facet is formed in the silicon device layer by crystallographic etch. In embodiments, the APD includes a silicon multiplication layer, a germanium absorption layer over the multiplication layer, and a plurality of ohmic contacts disposed over the absorption layer. An overlying optically reflective metal film interconnects the plurality of ohmic contacts and returns light transmitted around the ohmic contacts to the absorption layer for greater detector responsivity.

Abstract translation: 低电压APD设置在在PIC芯片的硅器件层内横向延伸的波导的端部。 APD布置在共同位于波导端部的倒置反射镜上，以将光从波导的内部反射耦合到APD的下侧。 在示例性实施例中，通过晶体蚀刻在硅器件层中形成45°-55°刻面。 在实施例中，APD包括硅倍增层，乘法层上的锗吸收层以及设置在吸收层上的多个欧姆接触。 覆盖的光反射金属膜互连多个欧姆接触并将在欧姆接触周围传输的光返回到吸收层，以提高检测器响应度。

公开(公告)号：US09761746B2

公开(公告)日：2017-09-12

申请号：US13976369

申请日：2013-03-11

Applicant: Yimin Kang ,  Han-Din D. Liu ,  Ansheng Liu

Inventor： Yimin Kang ,  Han-Din D. Liu ,  Ansheng Liu

IPC: H01S5/02 ,  H01L31/107 ,  H01L31/028 ,  H01L31/0232 ,  G02B6/26 ,  H01L35/24 ,  G02B6/12 ,  H01L31/105 ,  H01L31/18

CPC classification number: H01L31/028 ,  G02B6/12007 ,  G02B6/122 ,  G02B6/131 ,  G02B6/30 ,  H01L31/02327 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1804 ,  Y02E10/547

Abstract: A low voltage APD is disposed at an end of a waveguide extending laterally within a silicon device layer of a PIC chip. The APD is disposed over an inverted re-entrant mirror co-located at the end of the waveguide to couple light by internal reflection from the waveguide to an under side of the APD. In exemplary embodiments, a 45°-55° facet is formed in the silicon device layer by crystallographic etch. In embodiments, the APD includes a silicon multiplication layer, a germanium absorption layer over the multiplication layer, and a plurality of ohmic contacts disposed over the absorption layer. An overlying optically reflective metal film interconnects the plurality of ohmic contacts and returns light transmitted around the ohmic contacts to the absorption layer for greater detector responsivity.