公开(公告)号：US20150091041A1

公开(公告)日：2015-04-02

申请号：US14454559

申请日：2014-08-07

申请人： Ju Heon YOON ,  Myeong Ha KIM ,  Chan Mook LIM ,  Joon Woo JEON ,  Jin Young CHOI

发明人： Ju Heon YOON ,  Myeong Ha KIM ,  Chan Mook LIM ,  Joon Woo JEON ,  Jin Young CHOI

IPC分类号： H01L27/15 ,  H01L33/38

CPC分类号： H01L27/15 ,  H01L25/167 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting device includes a substrate, a first structure, a second structure, first and second n-electrodes, and first and second p-electrodes. The first structure is disposed on the substrate and includes a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer. The second structure is spaced apart from the first structure on the substrate and includes a second n-type semiconductor layer, a second active layer and a second p-type semiconductor layer. The first n-electrode and the first p-electrode are connected to the first n-type semiconductor layer and the first p-type semiconductor layer, respectively. The second n-electrode and the second p-electrode are connected to the second n-type semiconductor layer and the second p-type semiconductor layer, respectively. The second n-electrode is spaced apart from the second active layer to encompass the second active layer.

摘要翻译： 半导体发光器件包括衬底，第一结构，第二结构，第一和第二n电极以及第一和第二p电极。 第一结构设置在基板上，并且包括第一n型半导体层，第一有源层和第一p型半导体层。 第二结构与衬底上的第一结构间隔开，并且包括第二n型半导体层，第二有源层和第二p型半导体层。 第一n电极和第一p电极分别连接到第一n型半导体层和第一p型半导体层。 第二n电极和第二p电极分别连接到第二n型半导体层和第二p型半导体层。 第二n电极与第二有源层间隔开以包围第二有源层。

公开(公告)号：US20150207051A1

公开(公告)日：2015-07-23

申请号：US14601190

申请日：2015-01-20

申请人： Ju Heon YOON ,  Joon Woo JEON ,  Dong Hyuk JOO ,  Jin Young CHOI

发明人： Ju Heon YOON ,  Joon Woo JEON ,  Dong Hyuk JOO ,  Jin Young CHOI

IPC分类号： H01L33/62

CPC分类号： H01L33/14 ,  H01L33/382 ,  H01L2224/16225 ,  H01L2924/10155

摘要： A semiconductor light emitting device includes a stacked semiconductor structure including a first conductivity-type semiconductor layer having a top surface divided into a first region and a second region, and an active layer and a second conductivity-type semiconductor layer disposed sequentially on the second region of the first conductivity-type semiconductor layer. First and second contact electrodes are disposed in the first region of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively. A current spreading layer is disposed on the second contact electrode and comprises a first conductive layer having a first resistivity and a second conductive layer having a second resistivity smaller than the first resistivity alternately stacked.

摘要翻译： 半导体发光器件包括堆叠半导体结构，其包括具有分为第一区域和第二区域的顶表面的第一导电类型半导体层以及顺序地设置在第二区域上的有源层和第二导电类型半导体层 的第一导电型半导体层。 第一和第二接触电极分别设置在第一导电型半导体层和第二导电类型半导体层的第一区域中。 电流扩散层设置在第二接触电极上，并且包括具有第一电阻率的第一导电层和具有小于第一电阻率的第二电阻率的第二导电层。

公开(公告)号：US20110291140A1

公开(公告)日：2011-12-01

申请号：US13116192

申请日：2011-05-26

申请人： Kwang Ki Choi ,  Ji hyung Moon ,  June O Song ,  Sang Youl Lee ,  Tae Yeon Seong ,  Se Yeon Jung ,  Joon Woo Jeon ,  Seong Han Park

发明人： Kwang Ki Choi ,  Ji hyung Moon ,  June O Song ,  Sang Youl Lee ,  Tae Yeon Seong ,  Se Yeon Jung ,  Joon Woo Jeon ,  Seong Han Park

IPC分类号： H01L33/10 ,  H01L33/26

CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a gallium barrier layer on the light emitting structure layer, and a metal electrode layer on the gallium barrier layer.

摘要翻译： 提供了一种发光装置。 发光器件包括发光结构层，该发光结构层包括第一导电类型半导体层，有源层和第二导电类型半导体层，发光结构层上的镓阻挡层，以及镓势垒上的金属电极层 层。