公开(公告)号：US06277767B1

公开(公告)日：2001-08-21

申请号：US09541612

申请日：2000-04-03

申请人： Yoshimi Shiramizu ,  Mitsuaki Mitama

发明人： Yoshimi Shiramizu ,  Mitsuaki Mitama

IPC分类号： H01L21302

CPC分类号： H01L21/02046 ,  B08B7/0057 ,  H01L21/28167 ,  Y10S438/906

摘要： It is an object of the present invention to provide a cleaning method of and a cleaning apparatus for removing organic matters such as phthalates that have deposited on the surface of a semiconductor substrate while restraining the growth of a natural oxide film. The present invention provides a method of cleaning a semiconductor substrate, which comprises irradiating a semiconductor substrate contaminated by organic matters such as phthalic acid, phthalate and derivatives thereof with vacuum ultraviolet light having a wavelength within a range from 165 to 179 nm in an atmosphere of oxygen or air that is introduced from an O2 or air intake port, thereby decomposing and removing the contaminant.

摘要翻译： 本发明的目的是提供一种清洁方法和清洁装置，用于除去在半导体衬底的表面上沉积的有机物质，例如邻苯二甲酸酯，同时抑制天然氧化物膜的生长。 本发明提供了一种清洗半导体衬底的方法，该方法包括用在165至179nm范围内的波长范围内的真空紫外光照射被有机物质如邻苯二甲酸，邻苯二甲酸酯及其衍生物污染的半导体衬底， 氧气或空气从氧气或进气口引入，从而分解和去除污染物。

公开(公告)号：US07553471B2

公开(公告)日：2009-06-30

申请号：US11088320

申请日：2005-03-23

申请人： Toshiyuki Ohashi ,  Hiroshi Sugahara ,  Mitsuaki Mitama

发明人： Toshiyuki Ohashi ,  Hiroshi Sugahara ,  Mitsuaki Mitama

IPC分类号： D01F9/12

CPC分类号： B82Y40/00 ,  B01J19/123 ,  B01J23/745 ,  B01J35/006 ,  B82Y30/00 ,  C01B32/162 ,  C01B32/174 ,  C01B2202/06 ,  C01B2202/30 ,  C01B2202/34 ,  C01B2202/36 ,  Y10S977/847 ,  Y10S977/848

摘要： There is provided a method of manufacturing hydrophilic carbon nanotubes, which is capable of imparting hydrophilicity without damaging the surface of the carbon nanotubes. By irradiating carbon nanotubes 4 with ultraviolet ray 3, hydrophilic functional group(s) are introduced into the surface of carbon nanotubes 4. Hydrophilicity is imparted to the carbon nanotubes to such an extent that a contact angle of water is in the range of less than 130°. Ultraviolet ray 3 is a far ultraviolet ray having a wavelength ranging from 1 to 190 nm. The irradiation with ultraviolet ray 3 is conducted in the presence of oxygen and hydrogen or in the presence of ozone and hydrogen. The end part(s) of carbon nanotubes 4 is opened by the irradiation with ultraviolet ray 3.

摘要翻译： 提供了一种制造亲水性碳纳米管的方法，其能够赋予亲水性而不损害碳纳米管的表面。 通过用紫外线3照射碳纳米管4，将亲水性官能团引入到碳纳米管4的表面中。将亲水性赋予碳纳米管，使得水的接触角在小于 130°。 紫外线3是波长为1〜190nm的远紫外线。 在氧气和氢气存在下或在臭氧和氢气存在下进行紫外线3照射。 碳纳米管4的端部通过紫外线3的照射被打开。

公开(公告)号：US20050214196A1

公开(公告)日：2005-09-29

申请号：US11088320

申请日：2005-03-23

申请人： Toshiyuki Ohashi ,  Hiroshi Sugahara ,  Mitsuaki Mitama

发明人： Toshiyuki Ohashi ,  Hiroshi Sugahara ,  Mitsuaki Mitama

IPC分类号： B01J19/12 ,  B01J23/745 ,  C01B31/02 ,  D01F9/12

CPC分类号： B82Y40/00 ,  B01J19/123 ,  B01J23/745 ,  B01J35/006 ,  B82Y30/00 ,  C01B32/162 ,  C01B32/174 ,  C01B2202/06 ,  C01B2202/30 ,  C01B2202/34 ,  C01B2202/36 ,  Y10S977/847 ,  Y10S977/848

摘要： There is provided a method of manufacturing hydrophilic carbon nanotubes, which is capable of imparting hydrophilicity without damaging the surface of the carbon nanotubes. By irradiating carbon nanotubes 4 with ultraviolet ray 3, hydrophilic functional group(s) are introduced into the surface of carbon nanotubes 4. Hydrophilicity is imparted to the carbon nanotubes to such an extent that a contact angle of water is in the range of less than 130°. Ultraviolet ray 3 is a far ultraviolet ray having a wavelength ranging from 1 to 190 nm. The irradiation with ultraviolet ray 3 is conducted in the presence of oxygen and hydrogen or in the presence of ozone and hydrogen. The end part(s) of carbon nanotubes 4 is opened by the irradiation with ultraviolet ray 3.

摘要翻译： 提供了一种制造亲水性碳纳米管的方法，其能够赋予亲水性而不损害碳纳米管的表面。 通过用紫外线3照射碳纳米管4，将亲水性官能团引入到碳纳米管4的表面中。将亲水性赋予碳纳米管，使得水的接触角在小于 130°。 紫外线3是波长为1〜190nm的远紫外线。 在氧气和氢气存在下或在臭氧和氢气存在下进行紫外线3照射。 碳纳米管4的端部通过紫外线3的照射被打开。

公开(公告)号：US06726886B2

公开(公告)日：2004-04-27

申请号：US09888565

申请日：2001-06-26

申请人： Yoshimi Shiramizu ,  Mitsuaki Mitama

发明人： Yoshimi Shiramizu ,  Mitsuaki Mitama

IPC分类号： B01J1908

CPC分类号： H01L21/02046 ,  B08B7/0057 ,  H01L21/28167 ,  Y10S438/906

摘要： A cleaning apparatus for removing organic matters such as phthalates that have deposited on the surface of a semiconductor substrate while restraining the growth of a natural oxide film includes a device for irradiating the semiconductor substrate contaminated by the organic matters. The device emits a vacuum ultraviolet light having a wavelength within a range from 165 to 179 nm in an atmosphere of oxygen or air that is introduced from an O2 or air intake port, thereby decomposing and removing the contaminant.

摘要翻译： 抑制自然氧化膜生长的同时沉积在半导体衬底的表面上的有机物质如邻苯二甲酸酯的清洁装置包括用于照射被有机物污染的半导体衬底的装置。 在从氧气或空气吸入口导入的氧气或空气的气氛中，该装置发射波长在165〜179nm范围内的真空紫外光，从而分解除去污染物。