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1.发明授权Chemical mechanical polishing a substrate having a filler layer and a stop layer 有权化学机械抛光具有填料层和停止层的基材公开(公告)号：US07201636B2
公开(公告)日：2007-04-10
申请号：US11075778
申请日：2005-03-08
CPC分类号： H01L21/76819 , B24B37/04 , B24B37/042 , H01L21/31053 , H01L21/3212 , H01L21/7684
摘要： A substrate is chemical mechanical polished with a high-selectivity slurry until the stop layer is at least partially exposed, and then the substrate is polished with a low-selectivity slurry until the stop layer is completely exposed.
摘要翻译： 将基材用高选择性浆料进行化学机械抛光，直至止挡层至少部分暴露，然后用低选择性浆料抛光基材直到停止层完全暴露。
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2.发明授权Chemical mechanical polishing a substrate having a filler layer and a stop layer 有权化学机械抛光具有填料层和停止层的基材公开(公告)号：US06863593B1
公开(公告)日：2005-03-08
申请号：US09184805
申请日：1998-11-02
IPC分类号： B24B37/04 , H01L21/3105 , H01L21/321 , H01L21/768 , B24C1/08
CPC分类号： H01L21/76819 , B24B37/04 , B24B37/042 , H01L21/31053 , H01L21/3212 , H01L21/7684
摘要： A substrate is chemical mechanical polished with a high-selectivity slurry until the stop layer is at least partially exposed, and then the substrate is polished with a low-selectivity slurry until the stop layer is completely exposed.
摘要翻译： 将基材用高选择性浆料进行化学机械抛光，直至止挡层至少部分暴露，然后用低选择性浆料抛光基材直到停止层完全暴露。
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公开(公告)号：US06435942B1
公开(公告)日：2002-08-20
申请号：US09502379
申请日：2000-02-11
IPC分类号： B24B4900
CPC分类号： H01L21/3212 , B24B37/0056 , B24B37/013 , B24B37/042 , B24B49/12 , H01L21/31053
摘要： A substrate is chemical mechanical polished first with a single layer hard polishing pad and a high-selectivity slurry until a first endpoint is reached, and then with a soft polishing pad and a low-selectivity slurry until a second endpoint is reached. Dishing is reduced when low-selectivity slurry is used at the second polishing step. Low Within-Wafer-Non-Uniformity is achieved by using a single layer hard pad at low pressure at the first polishing step.
摘要翻译： 首先用单层硬质抛光垫和高选择性浆料进行化学机械抛光，直到达到第一个终点，然后用柔软的抛光垫和低选择性浆料直到达到第二个终点。 当在第二抛光步骤中使用低选择性浆料时，减少沉淀。 通过在第一抛光步骤中使用低压下的单层硬垫来实现低内晶片非均匀性。
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