Procedure and device for specific particle manipulation and deposition
    1.
    发明授权
    Procedure and device for specific particle manipulation and deposition 失效
    用于特定颗粒操作和沉积的程序和装置

    公开(公告)号:US06616987B1

    公开(公告)日:2003-09-09

    申请号:US09676366

    申请日:2000-09-29

    CPC classification number: H01J37/32623 H01J37/32321 H01J37/32366

    Abstract: A process for manipulating particles distributed substantially non-uniformly in a plasma of a carrier or reaction gas, wherein Coulomb interaction between the particles is so low that the particles substantially do not form a plasmacrystalline state, and the particles are exposed in a location-selective manner to external adjustment forces and/or the plasma conditions are subjected to a location-selective change to apply at least a portion of the particles onto a substrate surface mask-free and/or subject it to a location-selective plasma treatment in the carrier or reaction gas.

    Abstract translation: 用于操纵在载体或反应气体的等离子体中基本不均匀分布的颗粒的方法,其中颗粒之间的库仑相互作用非常低,使得颗粒基本上不形成等离子体结晶状态,并且颗粒以位置选择性 对外部调节力和/或等离子体条件的方式进行位置选择性改变以将至少一部分颗粒施加到无掩模的基板表面上和/或使其在载体中进行位置选择性等离子体处理 或反应气体。

    Device for specific particle manipulation and deposition
    2.
    发明授权
    Device for specific particle manipulation and deposition 失效
    用于特定粒子操纵和沉积的装置

    公开(公告)号:US06777880B2

    公开(公告)日:2004-08-17

    申请号:US10403202

    申请日:2003-03-31

    CPC classification number: H01J37/32623 H01J37/32321 H01J37/32366

    Abstract: A process for manipulating particles distributed substantially non-uniformly in a plasma of a carrier or reaction gas, wherein Coulomb interaction between the particles is so low that the particles substantially do not form a plasmacrystalline state, and the particles are exposed in a location-selective manner to external adjustment forces and/or the plasma conditions are subjected to a location-selective change to apply at least a portion of the particles onto a substrate surface mask-free and/or subject it to a location-selective plasma treatment in the carrier or reaction gas.

    Abstract translation: 用于操纵在载体或反应气体的等离子体中基本不均匀分布的颗粒的方法,其中颗粒之间的库仑相互作用非常低,使得颗粒基本上不形成等离子体结晶状态,并且颗粒以位置选择性 对外部调节力和/或等离子体条件的方式进行位置选择性改变以将至少一部分颗粒施加到无掩模的基板表面上和/或使其在载体中进行位置选择性等离子体处理 或反应气体。

    Particle manipulation
    3.
    发明授权
    Particle manipulation 失效
    粒子操纵

    公开(公告)号:US06517912B1

    公开(公告)日:2003-02-11

    申请号:US09402295

    申请日:1999-11-29

    CPC classification number: H05H3/04 Y10S977/773 Y10S977/84

    Abstract: In a method for manipulating particles arranged in a plasma-cristalline state in a plasma of a carrier gas, the particles are at least partially subject to plasma treatment and/or applied to a substrate surface. A device for manipulating of particles in plasma-cristalline state includes a reaction vessel, in which plasma electrodes and at least one substrate are situated. An adaptive electrode for formation of a location selective low frequency or static electrical field in the reaction vessel is described.

    Abstract translation: 在用于操作在载气等离子体中以等离子体 - 质子态排列的颗粒的方法中,颗粒至少部分地进行等离子体处理和/或施加到基板表面。 用于操作等离子体 - 晶体状态的颗粒的装置包括其中设置有等离子体电极和至少一个基板的反应容器。 描述了在反应容器中形成位置选择性低频或静电场的自适应电极。

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