Method and system for increasing the lifespan of a plasma
    2.
    发明授权
    Method and system for increasing the lifespan of a plasma 有权
    提高等离子体使用寿命的方法和系统

    公开(公告)号:US08742667B2

    公开(公告)日:2014-06-03

    申请号:US13128097

    申请日:2009-11-06

    CPC classification number: H01J37/32321 H02G13/20

    Abstract: A method and a system for increasing the lifespan of a plasma obtained in the atmosphere. The method includes the following steps: emitting a femtosecond laser pulse, referred to as a first pulse, generating a column of plasma by the filamentation phenomenon, and emitting a second YAG laser pulse, focused by way of an axicon on a line in the plasma column, the energy of the photons of the second laser pulse being greater than the attachment energy of the electrons in the plasma to neutral molecules such as oxygen molecules. The duration of the second pulse is greater than the duration of the first pulse, and the delay between the two pulses is greater than one microsecond.

    Abstract translation: 一种用于增加在大气中获得的等离子体寿命的方法和系统。 该方法包括以下步骤:发射称为第一脉冲的飞秒激光脉冲,通过丝状现象产生等离子体柱,并且发射第二YAG激光脉冲,其通过等轴线上的三角晶体聚焦 第二激光脉冲的光子的能量大于等离子体中的电子对中性分子如氧分子的附着能。 第二脉冲的持续时间大于第一脉冲的持续时间,并且两个脉冲之间的延迟大于1微秒。

    METHOD AND SYSTEM FOR INCREASING THE LIFESPAN OF A PLASMA
    3.
    发明申请
    METHOD AND SYSTEM FOR INCREASING THE LIFESPAN OF A PLASMA 有权
    用于增加等离子体生物质的方法和系统

    公开(公告)号:US20110254448A1

    公开(公告)日:2011-10-20

    申请号:US13128097

    申请日:2009-11-06

    CPC classification number: H01J37/32321 H02G13/20

    Abstract: A method and a system for increasing the lifespan of a plasma obtained in the atmosphere. The method includes the following steps: emitting a femtosecond laser pulse, referred to as a first pulse, generating a column of plasma by the filamentation phenomenon, and emitting a second YAG laser pulse, focused by way of an axicon on a line in the plasma column, the energy of the photons of the second laser pulse being greater than the attachment energy of the electrons in the plasma to neutral molecules such as oxygen molecules. The duration of the second pulse is greater than the duration of the first pulse, and the delay between the two pulses is greater than one microsecond.

    Abstract translation: 一种用于增加在大气中获得的等离子体寿命的方法和系统。 该方法包括以下步骤:发射称为第一脉冲的飞秒激光脉冲,通过丝状现象产生等离子体柱,并且发射第二YAG激光脉冲,其通过等轴线上的三角晶体聚焦 第二激光脉冲的光子的能量大于等离子体中的电子对中性分子如氧分子的附着能。 第二脉冲的持续时间大于第一脉冲的持续时间,并且两个脉冲之间的延迟大于1微秒。

    Apparatus and method for treating a workpiece with ionizing gas plasma
    5.
    发明申请
    Apparatus and method for treating a workpiece with ionizing gas plasma 审中-公开
    用电离气体等离子体处理工件的设备和方法

    公开(公告)号:US20070235427A1

    公开(公告)日:2007-10-11

    申请号:US11732359

    申请日:2007-04-03

    Abstract: An apparatus to treat a workpiece with an ionizing gas plasma at about atmospheric pressure. The apparatus may include an outer electrode with at least one opening that also serves to hold the workpiece. An inner electrode may fit at least partially within the workpiece so as to create a plasma discharge zone between the inner electrode and an inner surface of the workpiece. A gas supply manifold may be included that directs a gas into the plasma discharge zone. A power supply may be used to generate an ionizing gas plasma in the plasma discharge zone. In one embodiment, there is a coating on an inner surface of the workpiece.

    Abstract translation: 一种在约大气压下用电离气体等离子体处理工件的装置。 该装置可以包括具有至少一个开口的外部电极,其还用于保持工件。 内部电极可以至少部分地配合在工件内,以便在内部电极和工件的内表面之间产生等离子体放电区域。 可以包括将气体引导到等离子体放电区域中的气体供应歧管。 电源可用于在等离子体放电区产生电离气体等离子体。 在一个实施例中,在工件的内表面上存在涂层。

    Plasma generation using multi-step ionization
    6.
    发明授权
    Plasma generation using multi-step ionization 失效
    使用多步电离的等离子体发生

    公开(公告)号:US06805779B2

    公开(公告)日:2004-10-19

    申请号:US10249202

    申请日:2003-03-21

    Inventor: Roman Chistyakov

    CPC classification number: H01J37/32623 H01J37/32321 H01J37/3405

    Abstract: The present invention relates to a plasma generator that generates a plasma with a multi-step ionization process. The plasma generator includes an excited atom source that generates excited atoms from ground state atoms supplied by a feed gas source. A plasma chamber confines a volume of excited atoms generated by the excited atom source. An energy source is coupled to the volume of excited atoms confined by the plasma chamber. The energy source raises an energy of excited atoms in the volume of excited atoms so that at least a portion of the excited atoms in the volume of excited atoms is ionized, thereby generating a plasma with a multi-step ionization process.

    Abstract translation: 本发明涉及一种利用多步电离过程产生等离子体的等离子体发生器。 等离子体发生器包括激发的原子源,其从由原料气源供应的基态原子产生激发原子。 等离子体室限制由激发原子源产生的激发原子的体积。 能量源耦合到由等离子体室限制的激发原子的体积。 能量源激发激发原子的体积中的激发原子的能量,使得被激发原子的体积中的激发原子的至少一部分被离子化,从而通过多步电离过程产生等离子体。

    Methods and apparatus for generating high-density plasma
    7.
    发明申请
    Methods and apparatus for generating high-density plasma 有权
    用于产生高密度等离子体的方法和装置

    公开(公告)号:US20040085023A1

    公开(公告)日:2004-05-06

    申请号:US10065629

    申请日:2002-11-04

    Inventor: Roman Chistyakov

    CPC classification number: H01J37/32321 C23C14/3471 C23C14/354 H01J37/34

    Abstract: Methods and apparatus for generating a strongly-ionized plasma are described. An apparatus for generating a strongly-ionized plasma according to the present invention includes an anode and a cathode that is positioned adjacent to the anode to form a gap there between. An ionization source generates a weakly-ionized plasma proximate to the cathode. A power supply produces an electric field in the gap between the anode and the cathode. The electric field generates excited atoms in the weakly-ionized plasma and generates secondary electrons from the cathode. The secondary electrons ionize the excited atoms, thereby creating the strongly-ionized plasma.

    Abstract translation: 描述了用于产生强电离等离子体的方法和装置。 根据本发明的用于产生强电离等离子体的装置包括阳极和阴极,阳极和阴极邻近阳极定位,以在其间形成间隙。 电离源产生靠近阴极的弱离子化等离子体。 电源在阳极和阴极之间的间隙中产生电场。 电场在弱离子化等离子体中产生激发原子,并从阴极产生二次电子。 二次电子使激发的原子电离,从而产生强电离等离子体。

    Method for making films utilizing a pulsed laser for ion injection and deposition
    8.
    发明申请
    Method for making films utilizing a pulsed laser for ion injection and deposition 失效
    利用脉冲激光制造膜用于离子注入和沉积的方法

    公开(公告)号:US20020094389A1

    公开(公告)日:2002-07-18

    申请号:US10051211

    申请日:2002-01-16

    Inventor: Fred J. Cadieu

    CPC classification number: H01J37/32321 C23C14/221 C23C14/28

    Abstract: A simple, relatively inexpensive, yet effective PLD method is provided for forming extremely clean films with reduced particulate densities and size. A PLD system is used for producing the thin films and includes a PLD chamber wherein a laser beam ablates a target material creating an ionized plasma plume of ions and electrons which is diverted and deposited onto a substrate using a confinement magnet and a deflection magnet. Each of the confinement magnet and the deflection magnet generates an axial magnetic field which is generally parallel to the laser beam plume ejection direction. The charged constituents of the plume are influenced by the magnetic fields and are thus deflected to the substrate, while the larger atomic clusters and particulates are advantageously not deflected. An electric field can also be used to aid in the deflection of the charged plume species. The electric field can be separately modulated to control the film deposition onto the substrate. This method favors useful film properties, such as crystallinity and good adhesion, even at room temperature, because it relies upon using high energy ions for the deposition.

    Abstract translation: 提供了一种简单,相对便宜且有效的PLD方法,用于形成具有降低的颗粒密度和尺寸的极其干净的膜。 PLD系统用于制造薄膜并且包括PLD室,其中激光束消除目标材料,从而产生离子和电子的离子化等离子体羽毛,其使用约束磁体和偏转磁体转移并沉积到基板上。 每个约束磁体和偏转磁体都产生大致平行于激光束羽流喷射方向的轴向磁场。 羽流的带电成分受到磁场的影响,因此偏转到基底,而更大的原子团和微粒有利地不偏转。 也可以使用电场来帮助带电羽状物质的偏转。 电场可以被单独调制以控制在衬底上的膜沉积。 这种方法即使在室温下也有利于膜的有效性能,如结晶度和粘附性,因为它依赖于使用高能离子进行沉积。

    Method of forming metal, ceramic or ceramic/metal layers on inner
surfaces of hollow bodies using pulsed laser deposition
    9.
    发明授权
    Method of forming metal, ceramic or ceramic/metal layers on inner surfaces of hollow bodies using pulsed laser deposition 有权
    使用脉冲激光沉积在中空体的内表面上形成金属,陶瓷或陶瓷/金属层的方法

    公开(公告)号:US6146714A

    公开(公告)日:2000-11-14

    申请号:US235978

    申请日:1999-01-22

    CPC classification number: H01J37/32321 C23C14/046 C23C14/28

    Abstract: A pulsed laser deposition (PLD) process is used for forming a functional metal, ceramic, or ceramic/metal layer on an inner wall of a hollow body. Simultaneously with the deposition process, a thin-film laser treatment is carried out, whereby a laser beam impinges on the coating layer as it is being formed to achieve a rapid heating followed by a rapid cooling and solidification of the deposited coating layer. In this context, the energy and material flux densities are prescribed and controlled as a function of the spacing of the condensation region from the substrate surface. Laser pulses having an energy of 1 to 2 Joules and a pulse repetition rate of 10 to 50 Hz are used. The pulse duration as well as the residual gas atmosphere in the vacuum deposition chamber are controlled so that the generated plasma flux forms the desired layered grain structure, namely a glassy amorphous structure, a columnar structure, or a polycrystalline structure. The coating or target material can be made of a conducting material and/or an insulating material. By continuously or discretely varying process parameters, it is possible to form graded layer coating systems having properties that vary through the thickness of the coating.

    Abstract translation: 脉冲激光沉积(PLD)工艺用于在中空体的内壁上形成功能金属,陶瓷或陶瓷/金属层。 与沉积工艺同时进行薄膜激光处理,由此激光束在其形成时照射在涂层上以实现快速加热,随后沉积涂层的快速冷却和固化。 在本文中,能量和物质通量密度是根据冷凝区域与衬底表面间隔的函数来规定和控制的。 使用具有1至2焦耳的能量和10至50Hz的脉冲重复频率的激光脉冲。 控制真空沉积室中的脉冲持续时间和残余气体气氛,使得产生的等离子体通量形成所需的层状晶粒结构,即玻璃态无定形结构,柱状结构或多晶结构。 涂层或靶材料可以由导电材料和/或绝缘材料制成。 通过连续或离散地改变工艺参数,可以形成具有通过涂层厚度变化的特性的分层涂层体系。

    Plasma generating apparatus and plasma processing apparatus
    10.
    发明授权
    Plasma generating apparatus and plasma processing apparatus 失效
    等离子体发生装置和等离子体处理装置

    公开(公告)号:US5651825A

    公开(公告)日:1997-07-29

    申请号:US396779

    申请日:1995-03-01

    CPC classification number: H01J37/32229 H01J37/32192 H01J37/32321

    Abstract: A plasma material gas is introduced into a plasma producing chamber, and, if necessary, a processing gas is introduced into a processing chamber communicated with the plasma producing chamber. In the plasma producing chamber, a microwave is radiated to a sintered body of metal oxide forming a plasma source, so that plasma is generated from the plasma material gas. Ions generated thereby are accelerated and introduced into the processing chamber. Predetermined processing is performed on a work directly by the ions, or is performed in a plasma generated by the ions from the processing gas.

    Abstract translation: 将等离子体材料气体引入等离子体产生室中,并且如果需要,将处理气体引入到与等离子体产生室连通的处理室中。 在等离子体产生室中,微波辐射到形成等离子体源的金属氧化物的烧结体中,从等离子体材料气体产生等离子体。 由此产生的离子被加速并引入处理室。 通过离子直接对工件进行预定处理,或者在由来自处理气体的离子产生的等离子体中进行。

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