公开(公告)号：US06927809B2

公开(公告)日：2005-08-09

申请号：US10694506

申请日：2003-10-27

申请人： Masahito Gotoh ,  Tohru Ueda ,  Yoshinori Higami

发明人： Masahito Gotoh ,  Tohru Ueda ,  Yoshinori Higami

IPC分类号： G02F1/1335 ,  G02F1/133 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L27/12 ,  H01L27/13 ,  H01L29/786 ,  G02F1/136

CPC分类号： G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  G02F2201/40 ,  H01L27/1255 ,  H01L29/78633

摘要： The active matrix substrate of the invention includes: a storage capacitor formed on a board; a first insulating layer formed on the storage capacitor; a semiconductor layer formed above the storage capacitor via the first insulating layer: a gate insulating layer formed on the semiconductor layer; a gate electrode layer including a gate electrode formed above the semiconductor layer via the gate insulating layer; a second insulating layer covering the gate electrode layer and the semiconductor layer; a first light-shielding layer formed above the semiconductor layer via the second insulating layer to cover at least a channel region of the semiconductor layer; a third insulating layer formed on the first light-shielding layer; a source electrode layer including source and drain electrodes formed on the third insulating layer; a fourth insulating layer formed on the source electrode layer; and a pixel electrode formed on the fourth insulating layer and electrically connected to the drain electrode. The first light-shielding layer is conductive and has a drain-side light-shielding portion electrically connected to one of a pair of electrodes of the storage capacitor and also to the drain electrode.

摘要翻译： 本发明的有源矩阵基板包括：形成在板上的存储电容器; 形成在所述存储电容器上的第一绝缘层; 半导体层，其经由所述第一绝缘层形成在所述存储电容器的上方;形成在所述半导体层上的栅极绝缘层; 栅极电极层，包括经由所述栅极绝缘层形成在所述半导体层上方的栅电极; 覆盖所述栅电极层和所述半导体层的第二绝缘层; 第一遮光层，其经由所述第二绝缘层形成在所述半导体层上方以覆盖所述半导体层的至少沟道区域; 形成在所述第一遮光层上的第三绝缘层; 源电极层，包括形成在所述第三绝缘层上的源极和漏极; 形成在所述源电极层上的第四绝缘层; 以及形成在第四绝缘层上并与漏电极电连接的像素电极。 第一遮光层是导电的，并且具有电连接到存储电容器的一对电极中的一个以及漏极电极的漏极侧遮光部分。

公开(公告)号：US06337259B1

公开(公告)日：2002-01-08

申请号：US09579440

申请日：2000-05-26

申请人： Tohru Ueda ,  Yasumori Fukushima ,  Yoshinori Higami

发明人： Tohru Ueda ,  Yasumori Fukushima ,  Yoshinori Higami

IPC分类号： H01L21322

CPC分类号： H01L29/66757 ,  H01L21/3226 ,  H01L29/78675

摘要： An amorphous silicon film is deposited on a quartz substrate, and a metal of Ni is introduced into the amorphous silicon film so that the amorphous silicon film is crystallized. Phosphorus is ion-implanted with an oxide pattern used as a mask. A heating process is performed in a nitrogen atmosphere, by which Ni is gettered. A heating process is performed in an O2 atmosphere, by which Ni is gettered into the oxide. Like this, by performing the first gettering in a non-oxidative atmosphere, the Ni concentration can be reduced to such a level that oxidation does not cause any increase of irregularities or occurrence of pinholes. Thus, in a second gettering, enough oxidation can be effected without minding any increase of irregularities and occurrence of pinholes, so that the Ni concentration can be reduced to an extremely low level. Also, a high-quality crystalline silicon film free from surface irregularities and pinholes can be obtained.

摘要翻译： 将非晶硅膜沉积在石英衬底上，将Ni的金属引入到非晶硅膜中，使得非晶硅膜结晶化。 用作为掩模的氧化物图案离子注入磷。 在氮气气氛中进行加热处理，Ni被吸收。 在O2气氛中进行加热处理，通过该加热处理将Ni吸收到氧化物中。 像这样，通过在非氧化性气氛中进行第一吸气，可以将Ni浓度降低到氧化不引起不规则性增加或针孔发生的程度。 因此，在第二吸气中，可以实现足够的氧化，而不会引起不规则性的增加和针孔的发生，使得Ni浓度可以降低到非常低的水平。 此外，可以获得没有表面凹凸和针孔的高品质结晶硅膜。

公开(公告)号：US07084503B2

公开(公告)日：2006-08-01

申请号：US10697987

申请日：2003-10-31

申请人： Akira Ishikawa ,  Shingo Eguchi ,  Seiji Oda ,  Yoshinori Higami

发明人： Akira Ishikawa ,  Shingo Eguchi ,  Seiji Oda ,  Yoshinori Higami

IPC分类号： H01L23/48 ,  H01L21/00

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78621 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a semiconductor device in which occurrence of disclination caused by steps in a contact portion and steps between pixel electrodes is prevented. A method of fabricating a semiconductor device according to the invention includes forming an insulating film 2 on an electrode 1a so as to cover the electrode; forming contact holes 2a and 2b located on the electrode and concave portions 2c and 2d connected to the contact hole; embedding a conductive film 8 in the contact hole and the concave portion and forming a conductive film 8 on the insulating film; and applying the CMP polishing or the etching-back to the conductive film, and thereby forming a pixel electrode made of the conductive films 8a and 8b embedded in the contact hole and the concave portion.

摘要翻译： 本发明提供了一种半导体器件，其中防止了由接触部分中的台阶和像素电极之间的步骤引起的发生偏心。 根据本发明的制造半导体器件的方法包括在电极1a上形成绝缘膜2以覆盖电极; 形成位于电极上的接触孔2a和2b;以及连接到接触孔的凹部2c和2d; 将导电膜8嵌入接触孔和凹部，并在绝缘膜上形成导电膜8; 对该导电膜进行CMP研磨或蚀刻反应，由此形成由嵌入到该接触孔和该凹部的导电膜8a，8b构成的像素电极。

公开(公告)号：US07075594B2

公开(公告)日：2006-07-11

申请号：US10614243

申请日：2003-07-08

申请人： Tohru Ueda ,  Kazuhiko Inoguchi ,  Yoshinori Higami

发明人： Tohru Ueda ,  Kazuhiko Inoguchi ,  Yoshinori Higami

IPC分类号： G02F1/136

CPC分类号： H01L29/78633 ,  G02F1/136209

摘要： A liquid crystal display device includes an active matrix substrate; a counter substrate; and a liquid crystal layer interposed between the active matrix substrate and the counter substrate. The active matrix substrate includes a plate; a thin film transistor provided on the plate; and a side light shielding layer for covering at least a portion of a side surface of the thin film transistor.

摘要翻译： 液晶显示装置包括有源矩阵基板; 相对基板; 以及插入在有源矩阵基板和对置基板之间的液晶层。 有源矩阵基板包括板; 设置在所述板上的薄膜晶体管; 以及用于覆盖薄膜晶体管的侧表面的至少一部分的侧光屏蔽层。

公开(公告)号：US06714266B1

公开(公告)日：2004-03-30

申请号：US09631964

申请日：2000-08-03

申请人： Tohru Ueda ,  Yoshinori Higami

发明人： Tohru Ueda ,  Yoshinori Higami

IPC分类号： G02F11343

CPC分类号： G02F1/1368 ,  G02F1/136209

摘要： In a transmission type liquid crystal display device, a semiconductor thin film is formed for each pixel below a signal wiring, a gate wiring, an auxiliary capacitance wiring and a lead electrode which are made of a light shading material via an insulating film. A region that belongs to the semiconductor thin film and is located below the signal wiring and below the gate wiring is made to serve as a channel region of a TFT. Regions that belong to the semiconductor thin film and are located on both sides of the channel region below the signal wiring are made to serve as a source region and a drain region of the TFT, respectively. Further, a region that belongs to the semiconductor thin film and is located below the auxiliary capacitance wiring is made to serve as an auxiliary capacitance electrode region. The TFT is effectively shaded without impairing the opening ratio of the transmission type liquid crystal display device with a simple construction, and the transmission type liquid crystal display device is fabricated with a high yield at low cost through a short process.

摘要翻译： 在透射型液晶显示装置中，通过绝缘膜由遮光材料制成的信号布线，栅极布线，辅助电容布线和引线电极以下的每个像素形成半导体薄膜。 属于半导体薄膜并且位于信号布线下方和栅极布线下方的区域被用作TFT的沟道区域。 分别属于半导体薄膜并位于信号线下方的沟道区两侧的区域用作TFT的源极区域和漏极区域。 此外，使属于半导体薄膜并且位于辅助电容布线下方的区域用作辅助电容电极区域。 通过简单的结构，不会损害透射型液晶显示装置的开口率，有效地遮蔽TFT，透射型液晶显示装置通过短时间以低成本制造。