摘要:
A decoder decodes input codes, such as Modified Huffman, Modified READ, and Modified Modified READ codes, and includes a zero bit detector which detects the number of consecutive leading zero bits of the input code. An address compressor forms address data by performing a logical operation of data indicating the number of detected zero bits and data excluding the consecutive leading zero bits and the next one bit of the data. A reference table for code conversion is addressed by the formed address data from the address compressor and outputs decoded data corresponding to the input code.
摘要:
A solidified radioactive waste manufacturing apparatus comprises a first system for producing radioactive waste powder from liquid radioactive waste and a second system connected to the first system for mixing the radioactive waste powder with a thermosetting resin and additives. The first system includes a liquid radioactive waste storage tank, a dryer for drying the liquid waste into powder, and a metering device for supplying a predetermined amount of the radioactive waste powder to the second system and the second system includes a mixer connected to the metering device for mixing the waste powder with the thermosetting resin and additives, a thermosetting resin storage tank, additive storage tanks, a cooler for cooling the mixer, and a container for receiving sludged mixture from the mixer. The additive storage tanks contain a polymerization initiator, a polymerization promotor, and a polymerization retarder, respectively.
摘要:
An image processing apparatus which feeds a placed original, reads image information on the original by a reading unit, and forms an image on the original by an ink-jet printing head arranged on a downstream side along the original feed direction has an add-on processing part for changing the image information read by the reading unit in correspondence with the image to be formed by the ink-jet printing head.
摘要:
An integrated circuit including a wafer having a GaAs substrate, an un-doped GaAs layer, and a GaAs active layer. This active layer may have an HEMT structure to improve its operation speed. Also, the substrate may a multi-layer structure to form a three dimensional capacitor. At least one mesa portion is formed on the substrate by removing a portion of the un-doped GaAs layer and GaAs active layer. A source electrode, for example, is formed on the mesa portion, and a ground electrode is formed on an exposed surface of the substrate. These electrodes are connected to each other by means of a wiring metal layer. As a result, the source electrode is easily grounded without using a long bonding wire.