公开(公告)号：US09385223B2

公开(公告)日：2016-07-05

申请号：US14748774

申请日：2015-06-24

Applicant: ABB Technology AG

Inventor： Munaf Rahimo ,  Martin Arnold ,  Jan Vobecky ,  Umamaheswara Vemulapati

IPC: H01L29/74 ,  H01L27/06 ,  H01L29/744

CPC classification number: H01L29/7416 ,  H01L27/0664 ,  H01L29/744

Abstract: A reverse-conducting power semiconductor device with a wafer has first and second main sides which are arranged opposite and parallel to each other. The device includes a plurality of diode cells and a plurality of gate commutated thyristors (GCT) cells. Each GCT cell includes layers of a first conductivity type (e.g., n-type) and a second conductivity type (e.g., p-type) between the first and second main sides. The device includes at least one mixed part in which diode anode layers of the diode cells alternate with first cathode layers of the GCT cells. In each diode cell, a diode buffer layer of the first conductivity type is arranged between the diode anode layer and a drift layer such that the diode buffer layer covers lateral sides of the diode anode layer from the first main side to a depth of approximately 90% of the thickness of the diode anode layer.

Abstract translation: 具有晶片的反向导电功率半导体器件具有彼此相对并平行布置的第一和第二主侧面。 该器件包括多个二极管单元和多个栅极换向晶闸管（GCT）单元。 每个GCT单元包括在第一和第二主侧之间的第一导电类型（例如，n型）和第二导电类型（例如，p型）的层。 该器件包括至少一个混合部分，其中二极管单元的二极管阳极层与GCT单元的第一阴极层交替。 在每个二极管单元中，第二导电类型的二极管缓冲层布置在二极管阳极层和漂移层之间，使得二极管缓冲层覆盖二极管阳极层的从第一主侧到大约90度的深度的侧面 二极管阳极层的厚度的百分比。

公开(公告)号：US08847277B2

公开(公告)日：2014-09-30

申请号：US13852366

申请日：2013-03-28

Applicant: ABB Technology AG

Inventor： Munaf Rahimo ,  Martin Arnold ,  Thomas Stiasny

IPC: H01L29/66 ,  H01L21/332

CPC classification number: H01L29/747 ,  H01L29/0692 ,  H01L29/0834 ,  H01L29/7416 ,  H01L29/7428 ,  H01L29/744

Abstract: An exemplary reverse-conducting power semiconductor device with a wafer having a first main side and a second main side parallel to the first main side. The device includes a plurality of diode cells and a plurality of IGCT cells, each IGCT cell including between the first and second main side: a first anode electrode, a first anode layer of a first conductivity type on the first anode electrode, a buffer layer of a second conductivity type on the first anode layer, a drift layer of the second conductivity type on the buffer layer, a base layer of the first conductivity type on the drift layer, a first cathode layer of a second conductivity type on the base layer, and a cathode electrode on the first cathode layer. A mixed part includes the second anode layers of the diode cells alternating with the first cathode layers of the IGCT cells.

Abstract translation: 一种示例性的反向导电功率半导体器件，其具有与第一主侧平行的第一主侧和第二主侧的晶片。 该装置包括多个二极管单元和多个IGCT单元，每个IGCT单元包括在第一和第二主侧之间：第一阳极电极，第一阳极电极上的第一导电类型的第一阳极层，缓​​冲层 在第一阳极层上具有第二导电类型的漂移层，缓冲层上的第二导电类型的漂移层，漂移层上的第一导电类型的基极层，基底层上的第二导电类型的第一阴极层 和第一阴极层上的阴极电极。 混合部分包括与IGCT电池的第一阴极层交替的二极管单元的第二阳极层。

公开(公告)号：US20160284708A1

公开(公告)日：2016-09-29

申请号：US15078602

申请日：2016-03-23

Applicant: ABB Technology AG

Inventor： Neophythos Lophitis ,  Florin Udrea ,  Umamaheswara Vemulapati ,  lulian Nistor ,  Martin Arnold ,  Jan Vobecky ,  Munaf Rahimo

IPC: H01L27/102 ,  H01L29/417 ,  H01L29/87

CPC classification number: H01L27/1027 ,  H01L29/0696 ,  H01L29/0839 ,  H01L29/41716 ,  H01L29/7416 ,  H01L29/744 ,  H01L29/87

Abstract: A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w′), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w′) of each one of the two outer cathode layer regions next to a diode cell neighbouring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.

Abstract translation: 提供了一种RC功率半导体，其包括多个二极管单元和多个GCT单元。 每个GCT单元包括具有至少三个阴极层区域的第一阴极层，其通过基底层彼此分离。 在与第一主面平行的平面上的正交投影中，每个阴极层区域是带状的和宽度（w，w'），其中二极管单元在横向方向上与至少一个 混合部分，其中在每个GCT单元中，与所述GCT单元相邻的二极管单元旁边的两个外部阴极层区域中的每一个的宽度（w'）小于所述GCT单元之间的任何中间阴极层区域的宽度（w） 该GCT电池中的两个外阴极层区域。

公开(公告)号：US09543305B2

公开(公告)日：2017-01-10

申请号：US15078602

申请日：2016-03-23

Applicant: ABB Technology AG

Inventor： Neophythos Lophitis ,  Florin Udrea ,  Umamaheswara Vemulapati ,  Lulian Nistor ,  Martin Arnold ,  Jan Vobecky ,  Munaf Rahimo

IPC: H01L29/66 ,  H01L27/102 ,  H01L29/87 ,  H01L29/417

CPC classification number: H01L27/1027 ,  H01L29/0696 ,  H01L29/0839 ,  H01L29/41716 ,  H01L29/7416 ,  H01L29/744 ,  H01L29/87

Abstract: A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w′), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w′) of each one of the two outer cathode layer regions next to a diode cell neighboring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.

Abstract translation: 提供了一种RC功率半导体，其包括多个二极管单元和多个GCT单元。 每个GCT单元包括具有至少三个阴极层区域的第一阴极层，其通过基底层彼此分离。 在与第一主面平行的平面上的正交投影中，每个阴极层区域是带状的和宽度（w，w'），其中二极管单元在横向方向上与至少一个 混合部分，其中在每个GCT单元中，与所述GCT单元相邻的二极管单元旁边的两个外部阴极层区域中的每一个的宽度（w'）小于所述GCT单元之间的任何中间阴极层区域的宽度（w） 该GCT电池中的两个外阴极层区域。