公开(公告)号：US11703751B2

公开(公告)日：2023-07-18

申请号：US17463724

申请日：2021-09-01

Applicant: AGC INC.

Inventor： Hiroshi Hanekawa ,  Tsuyoshi Kakuta ,  Yoichi Sera ,  Sadatatsu Ikeda

IPC: G03F1/24 ,  G03F1/48 ,  G03F1/54 ,  G03F1/52

CPC classification number: G03F1/24 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54

Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2θ) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.

公开(公告)号：US11150550B2

公开(公告)日：2021-10-19

申请号：US16056786

申请日：2018-08-07

Applicant: AGC INC.

Inventor： Hiroshi Hanekawa ,  Tsuyoshi Kakuta ,  Yoichi Sera ,  Sadatatsu Ikeda

IPC: G03F1/24 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54

Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2θ) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.