-
公开(公告)号：US12038685B2
公开(公告)日：2024-07-16
申请号：US18201705
申请日：2023-05-24
Applicant: AGC Inc.
Inventor： Hirotomo Kawahara , Hiroyoshi Tanabe , Toshiyuki Uno , Hiroshi Hanekawa , Daijiro Akagi
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
-
公开(公告)号：US11036127B2
公开(公告)日：2021-06-15
申请号：US16056765
申请日：2018-08-07
Applicant: AGC INC.
Inventor： Hirotomo Kawahara , Hiroshi Hanekawa , Toshiyuki Uno
Abstract: A reflective mask blank includes a backside conductive film on a back surface of a substrate. The backside conductive film has a laminated structure including a stress compensation layer and a conductive layer in this order from the substrate side. The conductive layer includes a metal nitride. The stress compensation layer has a compressive stress and the stress compensation layer includes at least one compound selected from the group consisting of oxides, oxynitrides, and nitrides, each having an absorption coefficient (k) over the wavelength range of 400 nm to 800 nm being 0.1 or less. The conductive layer has a thickness of 5 nm or more and 30 nm or less. The backside conductive film has a total thickness of 50 nm or more.
-
公开(公告)号：US11934093B2
公开(公告)日：2024-03-19
申请号：US18219452
申请日：2023-07-07
Applicant: AGC INC.
Inventor： Yusuke Ono , Hiroshi Hanekawa , Hirotomo Kawahara
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nλ1000-1100 nm of 5.300 or less and has an extinction coefficient kλ1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nλ600-700 nm of 4.300 or less and has an extinction coefficient kλ600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nλ400-500 nm of 2.500 or more and has an extinction coefficient kλ400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.
-
公开(公告)号：US11703751B2
公开(公告)日：2023-07-18
申请号：US17463724
申请日：2021-09-01
Applicant: AGC INC.
Inventor： Hiroshi Hanekawa , Tsuyoshi Kakuta , Yoichi Sera , Sadatatsu Ikeda
Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2θ) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.
-
公开(公告)号：US11698580B2
公开(公告)日：2023-07-11
申请号：US17235220
申请日：2021-04-20
Applicant: AGC Inc.
Inventor： Hirotomo Kawahara , Hiroyoshi Tanabe , Toshiyuki Uno , Hiroshi Hanekawa , Daijiro Akagi
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
-
Patent Agency Ranking
公开(公告)号：US12235575B2
公开(公告)日：2025-02-25
申请号：US18439057
申请日：2024-02-12
Applicant: AGC INC.
Inventor： Yusuke Ono , Hiroshi Hanekawa , Hirotomo Kawahara
IPC: G03F1/24
Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nλ1000-1100 nm of 5.300 or less and has an extinction coefficient kλ1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nλ600-700 nm of 4.300 or less and has an extinction coefficient kλ600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nλ400-500 nm of 2.500 or more and has an extinction coefficient kλ400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.
-
公开(公告)号：US12216398B2
公开(公告)日：2025-02-04
申请号：US18417352
申请日：2024-01-19
Applicant: AGC INC.
Inventor： Hiroyoshi Tanabe , Hiroshi Hanekawa , Toshiyuki Uno
Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10% and consists of a lower absorption layer and an upper absorption layer. A film thickness dbi of the absorbent layer satisfies a relationship of: dbi MAX−(i×6+1) nm≤dbi≤dbi MAX−(i×6−1) nm where the integer i is 0 or 1, and dbi MAX is represented by: d bi MAX ( nm ) = 13.53 2 n cos 6 ° { INT ( 0.58 1 - n 1 ) + 1 2 π ( tan - 1 ( - k 2 1 - n 2 ) + 0.64 ) } , where n1 is a refractive index of the lower absorbent layer, n2 is a refractive index of the upper absorbent layer, k2 is an absorption coefficient of the upper absorbent layer, and INT(x) is a function of returning an integer value obtained by truncating a decimal part.
-
公开(公告)号：US20230350284A1
公开(公告)日：2023-11-02
申请号：US18219452
申请日：2023-07-07
Applicant: AGC INC.
Inventor： Yusuke Ono , Hiroshi Hanekawa , Hirotomo Kawahara
CPC classification number: G03F1/24 , G03F7/70058
Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nλ1000-1100 nm of 5.300 or less and has an extinction coefficient kλ1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nλ600-700 nm of 4.300 or less and has an extinction coefficient kλ600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nλ400-500 nm of 2.500 or more and has an extinction coefficient kλ400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.
-
公开(公告)号：US12032280B2
公开(公告)日：2024-07-09
申请号：US18544970
申请日：2023-12-19
Applicant: AGC INC.
Inventor： Hiroshi Hanekawa , Taiga Fudetani , Yusuke Ono , Shunya Taki
Abstract: A reflective mask blank includes: a substrate; a multilayer reflective film configured to reflect EUV light; a protective film; and a phase shift film configured to shift a phase of EUV light, in this order, in which the phase shift film includes a first layer including one or more first elements selected from a group consisting of ruthenium, rhenium, iridium, silver, osmium, gold, palladium, and platinum, and a second layer including one or more second elements selected from a group consisting of tantalum and chromium, the first layer includes a region A1 in which a content of an element having a highest content among the one or more first elements increases in a thickness direction from a side opposite to the second layer toward the second layer, and the region A1 is present adjacent to the second layer.
-
公开(公告)号：US11982935B2
公开(公告)日：2024-05-14
申请号：US17529124
申请日：2021-11-17
Applicant: AGC Inc.
Inventor： Hirotomo Kawahara , Hiroshi Hanekawa , Toshiyuki Uno , Masafumi Akita
IPC: G03F1/24 , G03F1/52 , H01L21/027 , H01L21/033
CPC classification number: G03F1/24 , G03F1/52 , H01L21/0274 , H01L21/0332 , H01L21/0337
Abstract: A reflective mask blank for EUV lithography includes a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, and a hard mask layer. The protective layer contains ruthenium (Ru), the absorption layer contains tantalum (Ta), the hard mask layer contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and the hard mask layer has a film density of from 3.00 g/cm3 to 5.40 g/cm3.
-
-
-
-
-
-
-
-
-
Search Results
15
records
(took 0.014 seconds)
