公开(公告)号：US20230223241A1

公开(公告)日：2023-07-13

申请号：US18181152

申请日：2023-03-09

Applicant: AGC Inc.

Inventor： Koji KAWAHARA ,  Tomonori OGAWA

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32642 ,  H01L21/67069 ,  H01J37/3244 ,  H01J2237/334

Abstract: A component for a film formation apparatus or an etching apparatus used for manufacturing semiconductors, the component including a disk-shaped or ring-shaped SiC film having an outer diameter of 300 mm or more and a thickness of 3 mm or more. The component does not include an interface extending perpendicularly to a thickness direction of the SiC film on an exposed side surface of the SiC film.

公开(公告)号：US20240191345A1

公开(公告)日：2024-06-13

申请号：US18411398

申请日：2024-01-12

Applicant: AGC Inc.

Inventor： Rui HAYASHI ,  Tomonori OGAWA ,  Koji KAWAHARA

IPC: C23C16/32

CPC classification number: C23C16/325

Abstract: A component for a semiconductor production apparatus includes a part of polycrystalline silicon carbide (SiC) produced through chemical vapor deposition (CVD), the part being of the component. The part of the polycrystalline SiC includes a first dopant with which the part of the polycrystalline SiC is doped in a range of from 10 atomic concentration in ppm through 10 atomic concentration in % with respect to an entirety of the part. The first dopant includes at least one element selected from the group consisting of aluminum (Al), yttrium (Y), magnesium (Mg), tin (Sn), calcium (Ca), zinc (Zn), cobalt (Co), iron (Fe), nickel (Ni), silver (Ag), and chromium (Cr).