公开(公告)号：US20200324522A1

公开(公告)日：2020-10-15

申请号：US16912169

申请日：2020-06-25

Applicant: AGC Inc. ,  AGC GLASS EUROPE ,  AGC FLAT GLASS NORTH AMERICA, INC. ,  AGC VIDROS DO BRASIL LTDA.

Inventor： Akiyo MATSUMOTO ,  Masanobu ISSHIKI ,  Masafumi AKITA

IPC: B32B17/10

Abstract: A transparent substrate with a laminated film, which comprises a transparent substrate and a laminated film formed on at least one surface of the transparent substrate, wherein the laminated film has a first dielectric layer, a crystallinity-improving layer, a functional layer and a second dielectric layer in this order from the transparent substrate side, the crystallinity-improving layer contains ZrNx (wherein x is higher than 1.2 and at most 2.0), the functional layer contains at least one metal nitride selected from the group consisting of titanium nitride, chromium nitride, niobium nitride, molybdenum nitride and hafnium nitride, and the concentration of oxygen atoms at a boundary between the crystallinity-improving layer and the functional layer, is at most 20 atom %.

公开(公告)号：US20250057048A1

公开(公告)日：2025-02-13

申请号：US18929698

申请日：2024-10-29

Applicant: AGC Inc.

Inventor： Kenichi UMEDA ,  Akiyo NOGAMI ,  Masafumi AKITA

IPC: H10N30/00 ,  H10N30/076 ,  H10N30/079 ,  H10N30/853

Abstract: The present invention relates to a piezoelectric laminated body including: a substrate; and a laminated film provided on at least one surface of the substrate, in which the laminated film includes an electrode layer, a base layer, and a piezoelectric thin film in this order from a substrate side, the base layer and the piezoelectric thin film are in contact with each other, the base layer contains zirconium nitride, and the piezoelectric thin film has a hexagonal wurtzite structure oriented in a c-axis direction.

公开(公告)号：US20240201576A1

公开(公告)日：2024-06-20

申请号：US18592084

申请日：2024-02-29

Applicant: AGC Inc.

Inventor： Hirotomo KAWAHARA ,  Hiroshi HANEKAWA ,  Toshiyuki UNO ,  Masafumi AKITA

IPC: G03F1/24 ,  G03F1/52 ,  H01L21/027 ,  H01L21/033

CPC classification number: G03F1/24 ,  G03F1/52 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/0337

Abstract: A reflective mask blank for EUV lithography includes a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, and a hard mask layer. The protective layer contains ruthenium (Ru), the absorption layer contains tantalum (Ta), the hard mask layer contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and the hard mask layer has a film density of from 3.00 g/cm3 to 5.40 g/cm3.

公开(公告)号：US20220075256A1

公开(公告)日：2022-03-10

申请号：US17529124

申请日：2021-11-17

Applicant: AGC Inc.

Inventor： Hirotomo KAWAHARA ,  Hiroshi HANEKAWA ,  Toshiyuki UNO ,  Masafumi AKITA

IPC: G03F1/24 ,  G03F1/52 ,  H01L21/027 ,  H01L21/033

Abstract: A reflective mask blank for EUV lithography includes a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, and a hard mask layer. The protective layer contains ruthenium (Ru), the absorption layer contains tantalum (Ta), the hard mask layer contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and the hard mask layer has a film density of from 3.00 g/cm3 to 5.40 g/cm3.