ORGANIC PHOTOELECTRONIC ELEMENT
    1.
    发明申请

    公开(公告)号:US20200176715A1

    公开(公告)日:2020-06-04

    申请号:US16779719

    申请日:2020-02-03

    Abstract: To provide an organic photoelectronic element, of which the external quantum efficiency is improved, the power consumption is low and the service life is prolonged. The organic photoelectronic element comprises a substrate, an anode provided on the substrate, a cathode facing the anode, a light emitting layer disposed between the anode and the cathode, and a hole transport layer provided in contact with the light emitting layer between the light emitting layer and the anode, wherein the hole transport layer contains an organic semiconductor material and a fluorinated polymer, and at the surface of the hole transport layer in contact with the light emitting layer, the fluorinated polymer is present.

    SUBSTRATE FOR LED ELEMENT AND IMAGE DISPLAY DEVICE

    公开(公告)号:US20230223493A1

    公开(公告)日:2023-07-13

    申请号:US18182688

    申请日:2023-03-13

    Applicant: AGC Inc.

    CPC classification number: H01L33/20 H01L25/0753

    Abstract: The present invention relates to an LED element substrate on which an LED element is to be provided and which includes a glass, in which at least one main surface of the substrate is black, and one or more LED elements are to be provided on the black main surface, and relates to an LED element substrate on which an LED element is to be provided and which includes a glass, in which at least one main surface of the substrate is black, the substrate comprises a plurality of holes, and one or more LED elements are to be provided on an inside of each of the holes.

    CONDUCTIVE FILM, OPTOELECTRONIC DEVICE AND CONDUCTIVE FILM MANUFACTURING METHOD

    公开(公告)号:US20230022628A1

    公开(公告)日:2023-01-26

    申请号:US17934753

    申请日:2022-09-23

    Applicant: AGC Inc.

    Abstract: To provide a novel conductive film having two regions differing in the light transmittance, an optoelectronic device having such a conductive film, and a method for producing a conductive film by which such a conductive film can readily be produced.
    A conductive film, which has a first region and a second region having a light transmittance higher than the first region,
    the conductive film having a first film formed of a conductive material as a material and a resin film formed of a fluorinated polymer as a material,
    the first film being disposed to overlap with at least the first region among the first region and the second region,
    the resin film being disposed to overlap with the second region, and
    the fluorinated polymer satisfying the following (1) and (2):
    (1) when the temperature is increased at a temperature-increasing rate of 2° C./min under a pressure of 1×10−3 Pa, the temperature at which the thermogravimetric loss rate substantially reaches 100% is 400° C. or lower;
    (2) when the temperature is increased at a temperature-increasing rate of 2° C./min under a pressure of 1×10−3 Pa, the temperature width from a temperature at which the thermogravimetric loss rate is 10% to a temperature at which it is 90%, is within 200° C.

    ORGANIC PHOTOELECTRONIC ELEMENT
    8.
    发明申请

    公开(公告)号:US20200168829A1

    公开(公告)日:2020-05-28

    申请号:US16779740

    申请日:2020-02-03

    Abstract: To provide an organic photoelectronic element excellent in light emitting characteristics and long-term reliability. The organic photoelectronic element comprises a substrate, an anode provided on the substrate, a cathode facing the anode, a light emitting layer disposed between the anode and the cathode, a hole transport layer disposed between the light emitting layer and the anode, and an electron blocking layer provided in contact with the light emitting layer and the hole transport layer between the light emitting layer and the hole transport layer, wherein the hole transport layer contains a fluorinated polymer and an organic semiconductor material, and has a refractive index in the wavelength range of from 450 nm to 800 nm, of at most 1.60, the hole transport layer and the electron blocking layer are made of different materials from each other, and the LUMO energy level of the electron blocking layer is higher than the LUMO energy level of the light emitting layer and the LUMO energy level of the hole transfer layer.

    FLUORINE-CONTAINING POLYMER, FILM, FILM MANUFACTURING METHOD, AND ORGANIC OPTO-ELECTRONIC ELEMENT

    公开(公告)号:US20220372186A1

    公开(公告)日:2022-11-24

    申请号:US17817132

    申请日:2022-08-03

    Applicant: AGC Inc.

    Abstract: A fluorinated polymer suitable for deposition is provided. A film containing such a fluorinated polymer as a material is provided. A method for producing a film, by which such a film can readily be produced, is provided. Further, an organic photoelectronic element having such a film in its structure is provided.
    A fluorinated polymer which satisfies the following requirements (1) to (3): (1) the melting point is 200° C. or higher, (2) the thermogravimetric loss rate when the temperature is increased at a temperature-increasing rate of 2° C./min under a pressure of 1×10−3 Pa, substantially reaches 100% at 400° C. or lower, (3) when the temperature is increased at a temperature-increasing rate of 2° C./min under a pressure of 1×10−3 Pa, the temperature width from a temperature at which the thermogravimetric loss rate is 10% to a temperature at which it is 90%, is within 100° C.

    FLUORINE-CONTAINING POLYMER, RESIN FILM, AND OPTO-ELECTRONIC ELEMENT

    公开(公告)号:US20220372180A1

    公开(公告)日:2022-11-24

    申请号:US17817168

    申请日:2022-08-03

    Applicant: AGC Inc.

    Abstract: A fluorinated polymer suitable for deposition and capable of favorable metal patterning, is provided. A resin film containing such a fluorinated polymer as a material is provided. Further, a photoelectronic element having such a resin film in its structure is provided.
    A fluorinated polymer which satisfies the following requirements (1) to (3): (1) the melting point is less than 200° C., or no melting point is observed, (2) the thermogravimetric loss rate when the temperature is increased at a temperature-increasing rate of 2° C./min under a pressure of 1×10−3 Pa, substantially reaches 100% at 400° C. or lower, (3) when the temperature is increased at a temperature-increasing rate of 2° C./min under a pressure of 1×10−3 Pa, the temperature width from a temperature at which the thermogravimetric loss rate is 10% to a temperature at which it is 90%, is within 200° C.

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