公开(公告)号：US11670513B2

公开(公告)日：2023-06-06

申请号：US17227327

申请日：2021-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Yueh Sheng Ow ,  Junqi Wei ,  Wen Long Favier Shoo ,  Ananthkrishna Jupudi ,  Takashi Shimizu ,  Kelvin Boh ,  Tuck Foong Koh

IPC: H01L21/02 ,  H01L21/30 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01L21/3003 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

公开(公告)号：US11328929B2

公开(公告)日：2022-05-10

申请号：US16399478

申请日：2019-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Yueh Sheng Ow ,  Junqi Wei ,  Wen Long Favier Shoo ,  Ananthkrishna Jupudi ,  Takashi Shimizu ,  Kelvin Boh ,  Tuck Foong Koh

IPC: H01L21/311 ,  H01L21/30 ,  H01L21/683 ,  H01L21/67

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

公开(公告)号：US11114288B2

公开(公告)日：2021-09-07

申请号：US16271473

申请日：2019-02-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Kirankumar Neelasandra Savandaiah ,  Junqi Wei ,  Yueh Sheng Ow ,  Wen Long Favier Shoo

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/14 ,  C23C14/34

Abstract: Methods and apparatus for physical vapor deposition are provided. The apparatus, for example, includes A PVD apparatus that includes a chamber including a chamber wall; a magnetron including a plurality of magnets configured to produce a magnetic field within the chamber; a pedestal configured to support a substrate; and a target assembly comprising a target made of gold and supported on the chamber wall via a backing plate coupled to a back surface of the target so that a front surface of the target faces the substrate, wherein a distance between a back surface formed in a recess of the backing plate and a bottom surface of the plurality of magnets is about 3.95 mm to about 4.45 mm, and wherein a distance between the front surface of the target and a front surface of the substrate is about 60.25 mm to about 60.75 mm.