公开(公告)号：US20250105012A1

公开(公告)日：2025-03-27

申请号：US18896482

申请日：2024-09-25

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Giueseppe Alessio Verni ,  Petro Deminskyi ,  Balaji Kannan ,  Eric Jen cheng Liu ,  Fu Tang ,  Michael Givens ,  Eric James Shero

IPC: H01L21/28

Abstract: Aspects of the disclosure relate to the field of semiconductor devices, including methods and systems for manufacturing semiconductor devices. More particularly, semiconductor structures comprise a dipole layer, which can be formed from a metal and carbon containing layer. Further described are related methods, deposition systems, and devices.

公开(公告)号：US20230080843A1

公开(公告)日：2023-03-16

申请号：US17942244

申请日：2022-09-12

Applicant: ASM IP Holding B.V.

Inventor： Harihara Krishnan Krishnamoorthy ,  Eric Jen cheng Liu

IPC: H01L21/67 ,  F15D1/04

Abstract: An apparatus capable of controlling a liquid may provide a source vessel to contain the liquid and an inlet tube for flowing the liquid into the source vessel. The inlet tube may extend into the source vessel and may be arranged to direct the flowing liquid onto a sidewall of the source vessel.

公开(公告)号：US20230126516A1

公开(公告)日：2023-04-27

申请号：US17971860

申请日：2022-10-24

Applicant: ASM IP Holding B.V.

Inventor： Xingye Wang ,  Fu Tang ,  Eric Jen cheng Liu ,  Peijun Jerry Chen ,  YoungChol Byun

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/34

Abstract: A method of forming a doped silicon nitride film on a surface of a substrate and structures including the doped silicon nitride film are disclosed. Exemplary methods include forming a layer comprising silicon nitride using a first thermal process and forming a layer comprising doped silicon nitride using a second thermal process to thereby form the doped silicon nitride film.