公开(公告)号：US20240175130A1

公开(公告)日：2024-05-30

申请号：US18523021

申请日：2023-11-29

Applicant: ASM IP Holding B.V.

Inventor： Hichem M’Saad ,  Ivo Johannes Raaijmakers ,  Xing Lin ,  Wentao Wang ,  Herbert Terhorst

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/67 ,  H01L21/677

CPC classification number: C23C16/45546 ,  C23C16/4412 ,  C23C16/45553 ,  C23C16/45565 ,  H01L21/67098 ,  H01L21/67201 ,  H01L21/67248 ,  H01L21/67742

Abstract: Methods and systems for growing silicon carbide epitaxial layers are described. In one example, a reactor system with multiple reactor modules may include a heating load/lock chamber and a cooling load/lock chamber. In another example, a reactor may be heated by separate sets of coils inductively heating a susceptor, which heats graphite near one or more wafers. Multiple pyrometers may measure the temperature of the graphite walls at different locations. Based on temperature differences and/or temperature gradients, a temperature controller may adjust power provided to one or more sets of coils. In yet another example, separations between a wafer carrier and a wafer may be adjusted.