公开(公告)号：US20250038039A1

公开(公告)日：2025-01-30

申请号：US18785702

申请日：2024-07-26

Applicant: ASM IP Holding B.V.

Inventor： Ion Hong Chao ,  Kai Zhou ,  Peipei Gao ,  Wentao Wang ,  Han Ye ,  Kishor Patil ,  Fan Gao ,  Xing Lin ,  Alexandros Demos

IPC: H01L21/687

Abstract: A lift pin includes a lift pin body arranged along a lift pin axis having a contact pad, a stem segment, a neck segment, and a span feature. The contact pad is defined at a first end of the lift pin body, the stem segment extends from the contact pad, and the neck segment extends from the stem segment. The span feature is defined at a second end of the lift pin body, is connected to the contact pad by the neck segment and the stem segment, and has a minor and major widths. The minor width is equivalent to a neck diameter defined by the neck segment, the major with is greater than the minor width, and the major width is greater than a stem diameter defined by the stem segment. Lift pin arrangements, semiconductor processing systems, and methods of making semiconductor processing systems are also described.

公开(公告)号：US20250034714A1

公开(公告)日：2025-01-30

申请号：US18784060

申请日：2024-07-25

Applicant: ASM IP Holding B.V.

Inventor： Wentao Wang ,  Peipei Gao ,  Kishor Patil ,  Aniket Chitale ,  Fan Gao ,  Xing Lin ,  Alexandros Demos ,  Amir Kajbafvala ,  Emesto Suarez ,  Arun Murali ,  Caleb Miskin ,  Bubesh Babu Jotheeswaran

IPC: C23C16/46 ,  C23C16/06 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12 ,  C30B29/52 ,  H01L21/02

Abstract: A reflector includes a reflector body having a slotted surface, a planar surface, and an ellipsoidal surface. The planar surface is opposite the slotted surface and is separated from the slotted surface by a thickness of the reflector body. The ellipsoidal surface is offset from the planar surface, is opposite the slotted surface and separated from the slotted surface by the thickness of the reflector body and spans the slotted surface of the reflector body. The ellipsoidal surface defines an elliptical profile that is orthogonal relative to the planar surface to concentrate heat flux at a distal focus of the elliptical profile using electromagnetic radiation reflected by the ellipsoidal surface of the reflector body. Semiconductor processing systems and material layer deposition methods are also described.

公开(公告)号：US20240071804A1

公开(公告)日：2024-02-29

申请号：US18238573

申请日：2023-08-28

Applicant: ASM IP Holding B.V.

Inventor： Peipei Gao ,  Wentao Wang ,  Han Ye ,  Kai Zhou ,  Fan Gao ,  Xing Lin

IPC: H01L21/687 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/68735 ,  H01L21/0262 ,  H01L21/67017 ,  H01L21/67248

Abstract: Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor ring and at least one injector tube. The injector tube can be disposed within the susceptor ring to provide a gas to a peripheral region of a substrate. Methods, systems, and assemblies can be used to obtain desired (e.g. composition and/or thickness) profiles of material on a substrate surface.

公开(公告)号：US20230116427A1

公开(公告)日：2023-04-13

申请号：US17962009

申请日：2022-10-07

Applicant: ASM IP Holding B.V.

Inventor： Junwei Su ,  Jiwen Xiang ,  Shujin Huang ,  Loc Vinh Tran ,  Wentao Wang ,  Xing Lin

IPC: C23C16/44 ,  H01L21/687 ,  H01L21/02 ,  C23C16/52 ,  C23C16/02 ,  C23C16/24

Abstract: A semiconductor processing system includes a gas delivery module, and a chamber body connected to the gas delivery module. The divider has an aperture, is fixed within an interior of the chamber body, and separates an interior of the chamber body into upper and lower chambers, the aperture fluidly coupling the lower chamber to the upper chamber. A susceptor is arranged within the aperture. A controller is operably connected to the gas delivery module to purge the lower chamber with a first purge flow including an etchant while etching the upper chamber, purge the lower chamber with a second purge flow including the etchant while depositing a precoat in the upper chamber, and purge the lower chamber with a third purge flow including the etchant while depositing a film onto a substrate in the upper chamber. Film deposition methods and lower chamber etchant purge kits are also described.

公开(公告)号：US20220301905A1

公开(公告)日：2022-09-22

申请号：US17697145

申请日：2022-03-17

Applicant: ASM IP Holding B.V.

Inventor： Han Ye ,  Kai Zhou ,  Peipei Gao ,  Wentao Wang ,  Kishor Patil ,  Fan Gao ,  Krishnaswamy Mahadevan ,  Xing Lin ,  Alexandros Demos

IPC: H01L21/67 ,  H01L21/66 ,  C23C16/46 ,  C23C16/52

Abstract: A method of operating a reactor system to provide multi-zone substrate temperature control. The method includes, with a first pyrometer, sensing a temperature of a first zone of a substrate supported in the reactor system, and, with a second pyrometer, sensing a temperature of a second zone of the substrate. The method further includes, with a controller, comparing the temperatures of the first and second zones to setpoint temperatures for the first and second zones and, in response, generating control signals to control heating of the substrate. The method also includes controlling, based on the control signals, operations of a heater assembly operating to heat the substrate.

公开(公告)号：US20220181193A1

公开(公告)日：2022-06-09

申请号：US17457605

申请日：2021-12-03

Applicant: ASM IP HOLDING B.V.

Inventor： Peipei Gao ,  Wentao Wang ,  Xing Lin ,  Han Ye ,  Ion Hong Chao ,  Siyao Luan ,  Alexandros Demos ,  Fan Gao

IPC: H01L21/687

Abstract: A substrate support and lift assembly configured to support and lift a substrate from a susceptor is disclosed. The substrate support and lift assembly can include a susceptor support and a lift pin. The susceptor support can be configured to support the susceptor thereon. The susceptor support includes a plurality of support arms each extending radially from a central portion of the susceptor support to a terminus. Each of the plurality of support arms includes an aperture extending therethrough. The lift pin can be configured to fit through the aperture of a corresponding support arm to lift a substrate on the susceptor.

公开(公告)号：US20170260649A1

公开(公告)日：2017-09-14

申请号：US15410503

申请日：2017-01-19

Applicant: ASM IP Holding B.V.

Inventor： Stephen Dale Coomer ,  Robert Vyne ,  Timo Bergman ,  Lee Bode ,  Wentao Wang

IPC: C30B25/14 ,  C23C16/455 ,  C30B25/16

CPC classification number: C30B25/14 ,  C23C16/45561 ,  C23C16/45582 ,  C23C16/45587 ,  C30B25/165

Abstract: A gas distribution system is disclosed in order to obtain better film uniformity on a wafer. The better film uniformity may be achieved by utilizing an expansion plenum and a plurality of, for example, proportioning valves to ensure an equalized pressure or flow along each gas line disposed above the wafer.

公开(公告)号：US12234554B2

公开(公告)日：2025-02-25

申请号：US17810094

申请日：2022-06-30

Applicant: ASM IP HOLDING B.V.

Inventor： Rutvij Naik ,  Junwei Su ,  Wentao Wang ,  Chuqin Zhou ,  Xing Lin

IPC: C23C16/458 ,  C23C16/455

Abstract: Systems of reducing devitrification within a chemical vapor deposition system can include a susceptor support ring that is configured to be positioned between a gas inlet and a gas outlet of a chamber passage. An example system can also include a getter support comprising a support base and one or more recesses therein. Each of the one or more recesses can be arranged to receive corresponding one or more support elements that are configured to support the getter plate. At least a portion of the getter support may include a coating comprising silicon carbide (SiC) having a thickness of at least about 50 microns. The getter support may be arranged to be disposed a maximum distance of between about 1 mm and about 10 mm from the susceptor support ring.

公开(公告)号：USD1030687S1

公开(公告)日：2024-06-11

申请号：US29840698

申请日：2022-05-31

Applicant: ASM IP Holding B.V.

Designer： Shujin Huang ,  Junwei Su ,  Wentao Wang ,  Xing Lin

Abstract: FIG. 1 is a front perspective view of a susceptor, showing our new design;
FIG. 2 is a bottom perspective view thereof;
FIG. 3 is right side view thereof;
FIG. 4 is a left side view thereof;
FIG. 5 is front view thereof;
FIG. 6 is back view thereof;
FIG. 7 is a top view thereof; and,
FIG. 8 is a bottom view thereof.

公开(公告)号：USD1028913S1

公开(公告)日：2024-05-28

申请号：US29797476

申请日：2021-06-30

Applicant: ASM IP HOLDING B.V.

Designer： Rutvij Naik ,  Junwei Su ,  Wentao Wang ,  Chuqin Zhou ,  Xing Lin

Abstract: FIG. 1 is a top perspective view of a semiconductor deposition reactor ring;
FIG. 2 is a bottom perspective view thereof;
FIG. 3 is a front view thereof;
FIG. 4 is a back view thereof;
FIG. 5 is a left view thereof;
FIG. 6 is a right view thereof;
FIG. 7 is a top view thereof; and,
FIG. 8 is a bottom view thereof.
The broken lines in the drawings illustrate portions of the semiconductor deposition reactor ring that form no part of the claimed design.