公开(公告)号：US20220352006A1

公开(公告)日：2022-11-03

申请号：US17730967

申请日：2022-04-27

申请人： ASM IP Holding B.V.

发明人： Shujin Huang ,  Junwei Su ,  Xing Lin ,  Alexandros Demos ,  Rutvij Naik ,  Wentao Wang ,  Matthew Goodman ,  Robin Scott ,  Amir Kajbafvala ,  Robinson James ,  Youness Alvandi-Tabrizi ,  Caleb Miskin

IPC分类号： H01L21/687 ,  C23C16/52 ,  C23C16/458

摘要： A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.

公开(公告)号：US20160340780A1

公开(公告)日：2016-11-24

申请号：US14719472

申请日：2015-05-22

申请人： ASM IP HOLDING B.V.

发明人： Paul Swan ,  Wentao Wang ,  Timothy J. Sullivan ,  Michael C. Sarin

IPC分类号： C23C16/458 ,  C23C16/455

CPC分类号： C23C16/4411 ,  C23C16/4412 ,  C23C16/54

摘要： A reaction chamber assembly with a shutter system may be used in the processing of semiconductor substrates. The shutter system may facilitate gas flow control and temperature control within the reaction chamber assembly.

摘要翻译： 具有快门系统的反应室组件可用于半导体衬底的处理。 快门系统可以促进反应室组件内的气体流量控制和温度控制。

公开(公告)号：US20230128390A1

公开(公告)日：2023-04-27

申请号：US18048099

申请日：2022-10-20

申请人： ASM IP Holding, B.V.

发明人： Shujin Huang ,  Junweli Su ,  Wentao Wang ,  Zhizhong Chen ,  Xing Lin ,  Jiwen Xiang

IPC分类号： H01L21/687

摘要： A substrate support includes a disc body with an upper surface and an opposite lower surface arranged along a rotation axis. The upper surface has a circular concave portion extending about the rotation axis, an annular ledge portion extending circumferentially about the concave portion, and an annular rim portion extending circumferentially about the ledge portion connecting to the concave portion of the disc body by the ledge portion of the disc body. The ledge portion slopes downward radially outward from the rotation axis to seat a substrate on the disc body such that a beveled edge of the substrate is cantilevered above the ledge portion of the upper surface of the disc body. Substrate support assemblies, semiconductor processing systems, and film deposition methods are also described.

公开(公告)号：US20210102292A1

公开(公告)日：2021-04-08

申请号：US17060507

申请日：2020-10-01

申请人： ASM IP Holding B.V.

发明人： Xing Lin ,  Peipei Gao ,  Prajwal Nagaraj ,  Mingyang Ma ,  Wentao Wang ,  Ion Hong Chao ,  Alexandros Demos ,  Paul Ma ,  Hichem M'Saad

IPC分类号： C23C16/455 ,  C23C16/40

摘要： A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

公开(公告)号：US20230002895A1

公开(公告)日：2023-01-05

申请号：US17810094

申请日：2022-06-30

申请人： ASM IP HOLDING B.V.

发明人： Rutvij Naik ,  Junwei Su ,  Wentao Wang ,  Chuqin Zhou ,  Xing Lin

IPC分类号： C23C16/458 ,  C23C16/455

摘要： Systems of reducing devitrification within a chemical vapor deposition system can include a susceptor support ring that is configured to be positioned between a gas inlet and a gas outlet of a chamber passage. An example system can also include a getter support comprising a support base and one or more recesses therein. Each of the one or more recesses can be arranged to receive corresponding one or more support elements that are configured to support the getter plate. At least a portion of the getter support may include a coating comprising silicon carbide (SiC) having a thickness of at least about 50 microns. The getter support may be arranged to be disposed a maximum distance of between about 1 mm and about 10 mm from the susceptor support ring.

公开(公告)号：US20230116427A1

公开(公告)日：2023-04-13

申请号：US17962009

申请日：2022-10-07

申请人： ASM IP Holding B.V.

发明人： Junwei Su ,  Jiwen Xiang ,  Shujin Huang ,  Loc Vinh Tran ,  Wentao Wang ,  Xing Lin

IPC分类号： C23C16/44 ,  H01L21/687 ,  H01L21/02 ,  C23C16/52 ,  C23C16/02 ,  C23C16/24

摘要： A semiconductor processing system includes a gas delivery module, and a chamber body connected to the gas delivery module. The divider has an aperture, is fixed within an interior of the chamber body, and separates an interior of the chamber body into upper and lower chambers, the aperture fluidly coupling the lower chamber to the upper chamber. A susceptor is arranged within the aperture. A controller is operably connected to the gas delivery module to purge the lower chamber with a first purge flow including an etchant while etching the upper chamber, purge the lower chamber with a second purge flow including the etchant while depositing a precoat in the upper chamber, and purge the lower chamber with a third purge flow including the etchant while depositing a film onto a substrate in the upper chamber. Film deposition methods and lower chamber etchant purge kits are also described.

公开(公告)号：US20220301905A1

公开(公告)日：2022-09-22

申请号：US17697145

申请日：2022-03-17

申请人： ASM IP Holding B.V.

发明人： Han Ye ,  Kai Zhou ,  Peipei Gao ,  Wentao Wang ,  Kishor Patil ,  Fan Gao ,  Krishnaswamy Mahadevan ,  Xing Lin ,  Alexandros Demos

IPC分类号： H01L21/67 ,  H01L21/66 ,  C23C16/46 ,  C23C16/52

摘要： A method of operating a reactor system to provide multi-zone substrate temperature control. The method includes, with a first pyrometer, sensing a temperature of a first zone of a substrate supported in the reactor system, and, with a second pyrometer, sensing a temperature of a second zone of the substrate. The method further includes, with a controller, comparing the temperatures of the first and second zones to setpoint temperatures for the first and second zones and, in response, generating control signals to control heating of the substrate. The method also includes controlling, based on the control signals, operations of a heater assembly operating to heat the substrate.

公开(公告)号：US20220181193A1

公开(公告)日：2022-06-09

申请号：US17457605

申请日：2021-12-03

申请人： ASM IP HOLDING B.V.

发明人： Peipei Gao ,  Wentao Wang ,  Xing Lin ,  Han Ye ,  Ion Hong Chao ,  Siyao Luan ,  Alexandros Demos ,  Fan Gao

IPC分类号： H01L21/687

摘要： A substrate support and lift assembly configured to support and lift a substrate from a susceptor is disclosed. The substrate support and lift assembly can include a susceptor support and a lift pin. The susceptor support can be configured to support the susceptor thereon. The susceptor support includes a plurality of support arms each extending radially from a central portion of the susceptor support to a terminus. Each of the plurality of support arms includes an aperture extending therethrough. The lift pin can be configured to fit through the aperture of a corresponding support arm to lift a substrate on the susceptor.

公开(公告)号：US20170260649A1

公开(公告)日：2017-09-14

申请号：US15410503

申请日：2017-01-19

申请人： ASM IP Holding B.V.

发明人： Stephen Dale Coomer ,  Robert Vyne ,  Timo Bergman ,  Lee Bode ,  Wentao Wang

IPC分类号： C30B25/14 ,  C23C16/455 ,  C30B25/16

CPC分类号： C30B25/14 ,  C23C16/45561 ,  C23C16/45582 ,  C23C16/45587 ,  C30B25/165

摘要： A gas distribution system is disclosed in order to obtain better film uniformity on a wafer. The better film uniformity may be achieved by utilizing an expansion plenum and a plurality of, for example, proportioning valves to ensure an equalized pressure or flow along each gas line disposed above the wafer.