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公开(公告)号：US12054828B2
公开(公告)日：2024-08-06
申请号：US18082674
申请日：2022-12-16
发明人： Kohei Fukushima
IPC分类号： C23C16/52 , C23C16/40 , C23C16/455 , C23C16/458 , H01L21/67 , H01L21/673 , H01L21/687
CPC分类号： C23C16/52 , C23C16/401 , C23C16/45527 , C23C16/45544 , C23C16/45546 , C23C16/45578 , C23C16/4583 , C23C16/4584 , H01L21/67017 , H01L21/67109 , H01L21/67393 , H01L21/68771
摘要： A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.
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公开(公告)号：US20240175130A1
公开(公告)日：2024-05-30
申请号：US18523021
申请日：2023-11-29
申请人： ASM IP Holding B.V.
IPC分类号： C23C16/455 , C23C16/44 , H01L21/67 , H01L21/677
CPC分类号： C23C16/45546 , C23C16/4412 , C23C16/45553 , C23C16/45565 , H01L21/67098 , H01L21/67201 , H01L21/67248 , H01L21/67742
摘要： Methods and systems for growing silicon carbide epitaxial layers are described. In one example, a reactor system with multiple reactor modules may include a heating load/lock chamber and a cooling load/lock chamber. In another example, a reactor may be heated by separate sets of coils inductively heating a susceptor, which heats graphite near one or more wafers. Multiple pyrometers may measure the temperature of the graphite walls at different locations. Based on temperature differences and/or temperature gradients, a temperature controller may adjust power provided to one or more sets of coils. In yet another example, separations between a wafer carrier and a wafer may be adjusted.
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3.发明公开公开(公告)号：US20240026567A1
公开(公告)日：2024-01-25
申请号：US18350517
申请日：2023-07-11
申请人： ASM IP Holding, B.V.
发明人： Rami Khazaka
IPC分类号： C30B25/16 , H01L21/02 , C23C16/455 , C23C16/52 , C23C16/24 , C30B25/12 , C30B29/06 , C30B29/68
CPC分类号： C30B25/165 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/0262 , C23C16/45529 , C23C16/45546 , C23C16/52 , C23C16/24 , C30B25/12 , C30B29/06 , C30B29/68 , H10B12/01
摘要： A method for forming an epitaxial stack on a plurality of substrates comprises providing a plurality of substrates to a process chamber and executing deposition cycles, wherein each deposition cycle comprises a first deposition pulse and a second deposition pulse. The epitaxial stack comprises a first epitaxial layer stacked alternatingly and repeatedly with a second epitaxial layer, the second epitaxial layer being different from the first epitaxial layer. The first deposition pulse comprises a provision of a first reaction gas mixture to the process chamber, thereby forming the first epitaxial layer having a first native lattice parameter. The second deposition pulse comprises a provision of a second reaction gas mixture to the process chamber, thereby forming the second epitaxial layer having a second native lattice parameter, wherein the first native lattice parameter lies in a range within 1.5% larger than and 0.9% smaller than the second native lattice parameter.
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公开(公告)号：US11859285B2
公开(公告)日：2024-01-02
申请号：US17472920
申请日：2021-09-13
发明人： Hiroki Iriuda , Kuniyasu Sakashita
IPC分类号： C23C16/455 , H01L21/02 , C23C16/52
CPC分类号： C23C16/45578 , C23C16/45546 , C23C16/52 , H01L21/0228
摘要： A processing apparatus includes: a processing container having a substantially cylindrical shape; a gas nozzle extending in a longitudinal direction of the processing container along an inside of a side wall of the processing container; an exhaust body formed on the side wall on an opposite side of the processing container to face the processing gas nozzle; and an adjustment gas nozzle configured to eject a concentration adjustment gas toward a center of the processing container. The adjustment gas nozzle is provided within an angle range in which the exhaust body is formed at a central angle with reference to the center of the processing container in a plan view from the longitudinal direction.
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公开(公告)号：US11781219B2
公开(公告)日：2023-10-10
申请号：US16819484
申请日：2020-03-16
发明人： Kazuo Yabe , Kazumasa Igarashi , Yamato Tonegawa
IPC分类号： C23C16/455 , C23C16/34 , C23C16/36 , C23C16/30
CPC分类号： C23C16/45536 , C23C16/308 , C23C16/345 , C23C16/36 , C23C16/45534 , C23C16/45542 , C23C16/45546 , C23C16/45553
摘要： A processing apparatus includes a processing container accommodating a substrate therein, a plasma generator having a plasma generation space communicating with an inside of the processing container, a first gas supply provided in the plasma generation space and configured to supply a hydrogen gas, and a second gas supply provided in the processing container and configured to supply a hydrogen gas.
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公开(公告)号：US11674225B2
公开(公告)日：2023-06-13
申请号：US15862190
申请日：2018-01-04
发明人： Hitoshi Kato , Yukio Ohizumi , Manabu Honma , Takeshi Kobayashi
IPC分类号： C23C16/455 , C23C16/458 , C23C16/52 , C23C14/50 , C23C14/04 , H01L21/304 , H01L21/67 , H01L21/687 , C23C14/26 , C23C14/22 , B05C11/10 , C23C16/40
CPC分类号： C23C16/45551 , B05C11/1031 , C23C14/042 , C23C14/228 , C23C14/26 , C23C14/505 , C23C16/402 , C23C16/4584 , C23C16/45546 , C23C16/52 , H01L21/304 , H01L21/67051 , H01L21/67126 , H01L21/68764 , H01L21/68771 , H01L21/68792
摘要： There is provided a substrate processing apparatus for performing film formation by supplying a processing gas to a substrate, including: a rotary table provided in a processing container; a mounting stand provided to mount the substrate and configured to be revolved by rotating the rotary table; a processing gas supply part configured to supply a processing gas to a region through which the mounting stand passes by the rotation of the rotary table; a rotation shaft rotatably provided in a portion rotating together with the rotary table and configured to support the mounting stand; a driven gear provided on the rotation shaft; a driving gear provided along an entire circumference of a revolution trajectory of the driven gear to face the revolution trajectory of the driven gear and configured to constitute a magnetic gear mechanism with the driven gear; and a rotating mechanism configured to rotate the driving gear.
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公开(公告)号：US20180204768A1
公开(公告)日：2018-07-19
申请号：US15922291
申请日：2018-03-15
发明人： Kimihiko Nakatani
IPC分类号： H01L21/768 , H01L21/285 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/52 , H01L21/02
CPC分类号： H01L21/76876 , C23C16/045 , C23C16/14 , C23C16/34 , C23C16/4408 , C23C16/4412 , C23C16/455 , C23C16/45527 , C23C16/45546 , C23C16/52 , H01L21/02271 , H01L21/285
摘要： Described herein is a technique capable of forming a film having excellent step coverage and superior filling properties. According to the technique, there is provided a method of manufacturing a semiconductor device including: (a) preparing a substrate provided with a groove having thereon a base film selected from a group consisting of a metal nitride film and an insulating film; and (b) performing a cycle a predetermined number of time to selectively form a first metal, film at a lower portion of the groove with the base film at an upper portion of the groove exposed, the cycle including: (b-1) supplying a first reducing gas to the substrate; and (b-2) supplying a first, metal-containing gas to the substrate, wherein (b-1) an (b-2) are non-simultaneously performed, and a supply condition of the first reducing gas in (b-1) is adjusted according to am aspect ratio of the groove.
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公开(公告)号：US20180187307A1
公开(公告)日：2018-07-05
申请号：US15910888
申请日：2018-03-02
IPC分类号： C23C16/455 , C23C16/34
CPC分类号： C23C16/45578 , C23C16/345 , C23C16/45546 , C23C16/45574
摘要： Provided is a technique capable of purging a adiabatic region without adversely affecting a processing region. A process chamber including a processing region for processing a substrate and a adiabatic region located below the processing region is included inside. A first exhaust portion for discharging an atmosphere of the processing region, and a second exhaust portion for discharging an atmosphere of the adiabatic region, formed at a position overlapping with the adiabatic region in a height direction, are included.
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公开(公告)号：US10011904B2
公开(公告)日：2018-07-03
申请号：US13645712
申请日：2012-10-05
申请人： Picosun Oy
IPC分类号： B65H1/00 , C23C16/455 , C23C16/44 , H01L21/67 , H01L21/677
CPC分类号： C23C16/45546 , C23C16/4401 , H01L21/67126 , H01L21/6719 , H01L21/67207 , H01L21/67742 , H01L21/67757
摘要： The invention relates to methods and apparatus in which a plurality of ALD reactors are placed in a pattern in relation to each other, each ALD reactor being configured to receive a batch of substrates for ALD processing, and each ALD reactor comprising a reaction chamber accessible from the top. A plurality of loading sequences is performed with a loading robot. Each loading sequence comprises picking up a substrate holder carrying a batch of substrates in a storage area or shelf, and moving said substrate holder with said batch of substrates into the reaction chamber of the ALD reactor in question.
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10.发明申请公开(公告)号：US20180044794A1
公开(公告)日：2018-02-15
申请号：US15672901
申请日：2017-08-09
CPC分类号： C23C16/56 , B08B5/00 , B08B9/08 , C23C16/345 , C23C16/4405 , C23C16/45546 , C23C16/45578 , C23C16/52
摘要： A cleaning method includes: removing deposits adhered to an inside of a processing vessel by forming a film on a substrate in the processing vessel, and thereafter, supplying a cleaning gas into the processing vessel, wherein the removing the deposits includes: a first step of supplying the cleaning gas into the processing vessel at a first flow rate when a temperature of a connection portion connecting an exhaust pipe that exhausts the interior of the processing vessel and the processing vessel is lower than a first temperature; and a second step of supplying the cleaning gas to the processing vessel while gradually decreasing the flow rate of the cleaning gas from the first flow rate to a second flow rate lower than the first flow rate when the temperature of the connection portion reaches a first temperature.
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