公开(公告)号：US20250046609A1

公开(公告)日：2025-02-06

申请号：US18792784

申请日：2024-08-02

Applicant: ASM IP Holding B.V.

Inventor： Fatemeh Davodi ,  Paul Chatelain ,  Charles Dezelah

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/503 ,  G03F7/20 ,  H01L21/033

Abstract: Methods and related systems and structures for reducing EUV dose requirements during lithography steps. Presently disclosed methods can comprise forming a dose reducing layer that comprises a doped semiconductor. The doped semiconductor can comprise at least one of an elemental semiconductor and a compound semiconductor.

公开(公告)号：US20240302748A1

公开(公告)日：2024-09-12

申请号：US18595105

申请日：2024-03-04

Applicant: ASM IP Holding B.V.

Inventor： João Antunes Afonso ,  Steaphan Mark Wallace ,  Paul Chatelain ,  Kishan Ashokbhai Patel ,  Fatemeh Davodi

IPC: G03F7/11 ,  G03F7/00

CPC classification number: G03F7/11 ,  G03F7/0035 ,  G03F7/70033 ,  G03F7/70041 ,  G03F7/70933

Abstract: The disclosure generally relates to the field of semiconductor substrate processing technology, and more particularly to methods for depositing layers of materials on substrates, to structures formed accordingly, and for systems for executing such methods and for forming such structures. Aspects relate to a layer deposition process comprising the steps of forming an extreme ultraviolet (EUV) photoresist underlayer on a surface of a substrate; providing a substrate within a reactor chamber; providing a precursor comprising Sn and/or In to the reactor chamber thereby adsorbing the precursor on the surface of the substrate; and forming an EUV photoresist underlayer on the surface of the substrate within the reactor chamber by exposing the precursor adsorbed on the surface to a plasma, wherein the plasma comprises H2 as reactant and a noble gas as carrier gas.